BCP28, BCP48 PNP Silicon Darlington Transistors For general AF applications 4 High collector current High current gain Complementary types: BCP29/49 (NPN) 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00008 Type Marking Pin Configuration Package BCP28 BCP 28 1=B 2=C 3=E 4=C SOT223 BCP48 BCP 48 1=B 2=C 3=E 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCP28 BCP48 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP28, BCP48 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP28 30 - - BCP48 60 - - BCP28 40 - - BCP48 80 - - 10 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current nA ICBO VCB = 30 V, IE = 0 BCP28 - - 100 VCB = 60 V, IE = 0 BCP48 - - 100 Collector cutoff current µA ICBO VCB = 30 V, IE = 0 , TA = 150 °C BCP28 - - 10 VCB = 60 V, IE = 0 , TA = 150 °C BCP48 - - 10 - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V BCP28 4000 - - BCP48 2000 - - BCP28 10000 - - BCP48 4000 - - BCP28 20000 - - BCP48 10000 - - BCP28 4000 - - BCP48 2000 - - DC current gain 1) IC = 10 mA, VCE = 5 V hFE DC current gain 1) IC = 100 mA, VCE = 5 V hFE DC current gain 1) IC = 500 mA, VCE = 5 V - hFE hFE 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BCP28, BCP48 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 200 - MHz Ccb - 8 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300µs, D = 2% 3 Nov-29-2001 BCP28, BCP48 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (T A) VCB = V CEmax BCP 28/48 10 4 1650 mW Ι CBO EHP00242 nA 1350 1200 P tot max 10 3 1050 900 10 2 750 typ 600 450 10 1 300 150 0 0 10 0 15 30 45 60 75 90 105 120 °C 150 TS 0 50 100 Permissible pulse load VCE = 5V Ptotmax / PtotDC = f (tp) BCP 28/48 150 TA Transition frequency fT = f (IC) 10 3 ˚C EHP00243 10 3 BCP 28/48 Ptot max 5 Ptot DC MHz fT EHP00244 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 2 5 10 1 5 10 1 10 0 10 1 10 2 mA 10 10 0 10 -6 3 ΙC 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-29-2001 BCP28, BCP48 DC current gain hFE = f (IC ) Collector-emitter saturation voltage VCE = 5V IC = f (VCEsat), h FE = 1000 10 6 BCP 28/48 EHP00246 10 3 5 h FE BCP 28/48 EHP00247 Ι C mA 125 ˚C 10 5 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 ΙC V V CEsat Collector-base capacitance CCB = f (VCBO) Base-emitter saturation voltage Emitter-base capacitance CEB = f (VEBO ) IC = f (VBEsat), hFE = 1000 10 CEB0 (CCB0 ) BCP 28/48 1.5 EHP00248 10 3 ΙC pF BCP 28/48 EHP00249 mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 CCB0 5 CEB0 10 1 5 0 10 -1 10 0 10 0 V 10 1 V EB0 (V CB0 ) 0 1.0 2.0 V 3.0 V BEsat 5 Nov-29-2001