TrilithIC BTS 7811K Data Sheet 1 Overview 1.1 Features • Quad D-MOS switch • Free configurable as bridge or quad-switch • Optimized for DC motor management applications • Low RDS ON: 26 mΩ high-side switch, 14 mΩ low-side switch (typical values @ 25 °C) P-TO263-15-1 • Maximum peak current: typ. 42 A @ 25 °C • Very low quiescent current: typ. 4 µA @ 25 °C • Small outline, thermal optimized PowerPak • Load and GND-short-circuit-protection • Operates up to 40 V • Status flag for over temperature • Open load detection in Off-mode • Overtemperature shut down with hysteresis • Internal clamp diodes • PWM capability up to 25kHz • Cross current free operation up to 13A load current (typ. value @ 12V/150°C) • Under-voltage detection with hysteresis Type Package BTS 7811K P-TO263-15-1 1.2 Description The BTS 7811K is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7811K can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuit. The protected high-side switch contains the control and diagnosis circuit. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in SFET 2 logic level technology. Data Sheet 1 Rev. 2.0, 2006-07-18 BTS 7811K 1.3 Pin Configuration (top view) Molding Compound NC 1 Heat-Slug 1 SL1 2 IL1 3 NC 4 IH1 5 ST1 6 SH1 7 DHVS 8 GND 9 IH2 10 ST2 11 SH2 12 18 DL1 Heat-Slug 2 17 DHVS Heat-Slug 3 IL2 13 16 SL2 14 NC 15 DL2 Figure 1: Pin Assignment Data Sheet 2 Rev. 2.0, 2006-07-18 BTS 7811K 1.4 Pin Definitions and Functions Pin No. Symbol Function 1 NC Not connected 2 SL1 Source of low-side switch 1 3 IL1 Analog input of low-side switch 1 4 NC Not connected 5 IH1 Digital input of high-side switch 1 6 ST1 Status of high-side switch 1; open Drain output 7 SH1 Source of high-side switch 1 8 DHVS Drain of high-side switches and power supply voltage 9 GND Ground of high-side switches 10 IH2 Digital input of high-side switch 2 11 ST2 Status of high-side switch 2; open Drain output 12 SH2 Source of high-side switch 2 13 IL2 Analog input of low-side switch 2 14 SL2 Source of low-side switch 2 15 NC Not connected 16 DL2 Drain of low-side switch 2 Heat-Slug 3 17 DHVS Drain of high-side switches and power supply voltage Heat-Slug 2 18 DL1 Drain of low-side switch 1 Heat-Slug 1 Pins written in bold type need power wiring. Data Sheet 3 Rev. 2.0, 2006-07-18 BTS 7811K 1.5 Functional Block Diagram DHVS 6 8, 17 ST1 ST2 IH1 IH2 11 5 10 Diagnosis Biasing and Protection Driver IN OUT 0 0 L L 0 1 L H 1 0 H L 1 1 H H RO1 RO2 12 16 SH2 DL2 9 GND 7 18 SH1 DL1 3 IL1 13 IL2 2 SL1 14 SL2 Figure 2: Block Diagram Data Sheet 4 Rev. 2.0, 2006-07-18 BTS 7811K 1.6 Circuit Description Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard Nchannel vertical power-MOS-FETs. Output Stages The output stages consist of a low RDS ON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body diodes can be used for freewheeling when commutating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. Short Circuit Protection The outputs are protected against – output short circuit to ground – overload (load short circuit). An internal OP-amp controls the Drain-Source-voltage by comparing the DS-voltagedrop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. Overtemperature Protection The high-side switches incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. Undervoltage-Lockout (UVLO) When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF. Open Load Detection The open load detection of the BTS 7811K works in OFF condition and is based on a voltage measurement at the source of the high side switch. In order to use the open load detection a pull up resistor to 5V has to be connected to source of one of the high side switches. Because in ON condition this pull up resistor would connect the bridge output to the µC supply it needs to be disconnected by a transistor when the high side switch is Data Sheet 5 Rev. 2.0, 2006-07-18 BTS 7811K on. In the data sheet application example (Figure 5) the open load detection would be used the following way: • Set IH1 = IH2 = LOW (both high side switches off) • Set IL2 = LOW, IL1 = HIGH (only low side switch 1 is on) • Connect Rol (open load pull up) to 5V via transistor If the load is connected properly it will pull down the voltage at SH2 to a value close to 0V. If the load is disconnected the resistor will pull the voltage at SH2 to value close to 5V. If the voltage at SH2 is higher than the open load detection voltage (VOUT(OL)) then ST2 will be pulled down. Status Flag The two status flag outputs are an open drain output with Zener-diode which require a pull-up resistor, c.f. the application circuit on page 16. ST1 and ST2 provide separate diagnosis for each high-side switch. Various errors as listed in the table “Diagnosis” are detected by switching the open drain output ST1/2 to low. Forward current in the integrated body diode of the highside switch may cause undefined voltage levels at the corresponding status output. The open load detection can be used to detect a short to Vs as long as both lowside switches are off and ROL is disconnected from 5V by BCR192W. Data Sheet 6 Rev. 2.0, 2006-07-18 BTS 7811K 2 Truthtable and Diagnosis (valid only for the High-Side-Switches) Flag IH1 IH2 SH1 Inputs SH2 ST1 ST2 Remarks Outputs 0 0 1 1 0 1 0 1 L L H H L H L H 1 1 1 1 1 1 1 1 stand-by mode switch2 active switch1 active both switches active 0 1 X X X X 0 1 Z H X X X X Z H 0 1 1 1 1 1 0 1 detected Overtemperature high-side switch1 0 1 X X L L X X 1 0 1 1 detected Overtemperature high-side switch2 X X 0 1 X X L L 1 1 1 0 detected Overtemperature both high-side switches 0 0 1 1 0 1 0 1 L L L L L L L L 1 1 0 0 1 0 1 0 detected detected detected Undervoltage X X L L 1 1 not detected Normal operation; identical with functional truth table Open load at high-side switch 1 Open load at high-side switch 2 detected Note: * multiple simultaneous errors are not shown in this table Inputs: Outputs: Status: 0 = Logic LOW Z = Output in tristate condition 1 = No error 1 = Logic HIGH L = Output in sink condition 0 = Error X = don’t care H = Output in source condition X = Voltage level undefined Data Sheet 7 Rev. 2.0, 2006-07-18 BTS 7811K 3 Electrical Characteristics 3.1 Absolute Maximum Ratings – 40 °C < Tj < 150 °C Parameter Symbol Limit Values min. Unit Remarks max. High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) Supply voltage Supply voltage for full short circuit protection HS-drain current HS-input current HS-input voltage VS VS(SCP) – 0.3 IS IIH VIH 42 V – 28 V – – 14 * A TC = 125°C; DC –5 5 mA Pin IH1 and IH2 – 10 16 V Pin IH1 and IH2 – 0.3 5.4 V – –5 5 mA Pin ST1 or ST2 Note: * internally limited Status Output ST (Pins ST1 and ST2) Status pull up voltage Status Output current VST IST Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2) Drain- source break down voltage VDSL 55 – V LS-drain current IDL IDL –21 26 A – 42 A – 67 A VIL = 0 V, ID ≤ 1 mA, Tj = 25°C TC = 125°C; DC tp < 100 ms; ν < 0.1 tp < 1 ms; ν < 0.1 VIL – 20 20 V Pin IL1 and IL2 Tj Tstg – 40 150 °C – – 55 150 °C – LS-drain current TC = 85°C LS-input voltage Temperatures Junction temperature Storage temperature Data Sheet 8 Rev. 2.0, 2006-07-18 BTS 7811K 3.1 Absolute Maximum Ratings (cont’d) – 40 °C < Tj < 150 °C Parameter Symbol Limit Values min. Unit Remarks max. Thermal Resistances (one HS-LS-Path active) LS-junction case HS-junction case Junction ambient Rthja = Tj(HS)/(P(HS)+P(LS)) RthjC L RthjC H Rthja – 1.05 K/W – 1.45 K/W – 35 K/W device soldered to reference PCB with 6 cm2 cooling area ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/ ESD assn. standard S5.1 - 1993) Input LS-Switch Input HS-Switch Status HS-Switch Output LS and HS-Switch VESD VESD VESD VESD 0.5 kV 1 kV 2 kV 4 kV all other pins connected to Ground Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. 3.2 Operating Range – 40 °C < Tj < 150 °C Parameter Symbol Limit Values Unit Remarks VUVOFF 42 V After VS rising above VUVON 8 18 V – – 0.3 15 V – – 0.3 20 V – 0 2 mA – – 40 150 °C – min. Supply voltage VS Supply voltage for PWM operation VS(PWM) Input voltages HS Input voltages LS Status output current Junction temperature VIH VIL IST TjHS max. Note: In the operating range the functions given in the circuit description are fulfilled. Data Sheet 9 Rev. 2.0, 2006-07-18 BTS 7811K 3.3 Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 4 9 µA IH1 = IH2 = 0 V Tj = 85 °C – – 20 µA IH1 = IH2 = 0 V – 4 8 mA IH1 or IH2 = 5 V – 8 16 mA IH1 and IH2 = 5 V – – 7 µA 2.2 10 mA VIH = VSH = 0 V Tj = 85 °C, Vs = 12V IFH =5 A Current Consumption HS-switch Quiescent current Supply current IS Q IS Leakage current of highside switch ISH LK Leakage current through logic GND in free wheeling condition ILKCL = – IFH + ISH Vs = 12V Current Consumption LS-switch Input current IIL – 10 100 nA Leakage current of lowside switch IDL LK – – 12 µA VIL = 20 V VDSL = 0 V VIL = 0 V VDSL = 40 V Tj = 85 °C Under Voltage Lockout (UVLO) HS-switch Switch-ON voltage Switch-OFF voltage Switch ON/OFF hysteresis Data Sheet VUVON VUVOFF VUVHY – – 5 V 1.8 – 4.5 V – 1 – V 10 VS increasing VS decreasing VUVON – VUVOFF Rev. 2.0, 2006-07-18 BTS 7811K 3.3 Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Condition Output Stages Inverse diode of highside switch; Forwardvoltage VFH – 0.8 1.2 V IFH = 5 A Inverse diode of lowside switch; Forward-voltage VFL – 0.8 1.2 V IFL = 5 A RDS ON H Static drain-source on-resistance of highside switch – 26 35 mΩ ISH = 5 A Tj = 25 °C RDS ON L – 14 17 mΩ ISL = 5 A; VIL = 5 V Tj = 25 °C Static path on-resistance RDS ON – – 100 mΩ Maximum load current for ILmax ccf cross current free operation VIL= 7V; RGate = 50Ω 5 8 – A – 10 – A – 13 – A RDS ON H + RDS ON L ISH = 5 A; Vs = 12V Vs > 8V, Tj = 150 °C Vs = 10V, Tj = 150 °C Vs = 12V, Tj = 150 °C Static drain-source on-resistance of lowside switch Note: Vs = 12V The device is regarded as cross current free if the reverse flowing charge through the high side switch is less than 1µC. i_cross_start 60 20V IL A 16V 40 12V 30 8V 20 10 0 20 40 60 80 100 120 °C Tj 160 Figure 3: Start of Cross Conduction vs. IL, VS and junction Temperature Tj Data Sheet 11 Rev. 2.0, 2006-07-18 BTS 7811K 3.3 Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values min. Unit Test Condition typ. max. 35 48 65 A – 42 – A 25 32 42 A Short Circuit of Highside Switch to GND Initial peak SC current tdel = 150µs; VS = 12 V; VDSH = 12V Note: ISCP H Tj = – 40 °C Tj = + 25 °C Tj = + 150 °C Integrated protection functions are designed to prevent IC destruction under fault conditions. Protection functions are not designed for continuous or repetitive operation. Peak short circuit current is significantly lower at VS > 18V. Short Circuit of Highside Switch to VS Output pull-down-resistor RO 7 14 42 kΩ VDSL = 3 V Thermal Shutdown Thermal shutdown junction temperature Tj SD 155 180 190 °C – Thermal switch-on junction temperature Tj SO 150 170 180 °C – Temperature hysteresis ∆T – 10 – °C ∆T = TjSD – TjSO IST = 1.6 mA VST = 5 V IST = 1.6 mA Status Flag Output ST of Highside Switch VST L IST LK VST Z td(SToffo+) – 0.2 0.6 V – – 5 µA – V – – 20 µs Status change after td(SToffo-) negative input slope with open load 1) – – 700 µs Low output voltage Leakage current Zener-limit-voltage Status change after positive input slope with open load 1) 5.4 1)Defined by design. Not subject to production test. Data Sheet 12 Rev. 2.0, 2006-07-18 BTS 7811K 3.3 Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. td(STofft+) – 1.6 10 µs RST = 47 kΩ Status change after td(STofft-) negative input slope with overtemperature 1) – 14 100 µs RST = 47 kΩ 3 4 V VS = 12 V RLoad = 12 Ω VS = 12 V Status change after positive input slope with overtemperature 1) Open Load Detection in Off Condition Open Load Detection Voltage VOUT(OL) 2 Switching Times of High Side Switch Turn-On-Time to 90% VSH tON – 100 220 µs Turn-Off-time to 10% VSH tOFF – 120 250 µs Slew Rate On 10 to 30% VSH dV/dtON – 0.5 1.1 V/µs Slew Rate Off 70 to 40% VSH -dV/ dtOFF 0.7 1.3 V/µs – 20 – ns – 85 – ns – 60 – ns – 80 – ns – Switching Times of Low Side Switch Turn-ON Delay Time1) Rise Time1) Switch-Off Delay Time1) Fall Time1) td(on) tr td(off) tf resistive load ISL = 10 A; VDSL = 12 V VIL = 5V; RGate= 16Ω 1)Defined by design. Not subject to production test. Data Sheet 13 Rev. 2.0, 2006-07-18 BTS 7811K 3.3 Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 4.5 – nC – 12 – nC Input charge total QIS QID QI – 30 60 nC Input plateau voltage1) Vplateau – 2.6 – V ISL = 10 A; VS = 12 V ISL = 10 A; VS = 12 V ISL = 10 A; VS = 12 V VIL = 0 to 5 V ISL = 10 A; VS = 12 V Gate Charge Characteristics Input to source charge1) Input to drain charge1) 1) Control Inputs of High Side Switches IH1, IH2 H-input voltage L-input voltage Input voltage hysterese H-input current L-input current Input series resistance Zener limit voltage VIH High VIH Low VIH HY IIH High IIH Low RI VIH Z – – 3.0 V – 1 – – V – – 0.5 – V – 5 30 65 µA 5 14 25 µA VIH = 5 V VIH = 0.4 V 2.7 4 6 kΩ – 5.4 – – V IIH = 1.6 mA VIL th – 1.9 3.0 V – 1.7 – 0.8 1.1 – Tj = – 40 °C Tj = + 25 °C Tj = + 150 °C Control Inputs IL1, IL2 Gate-threshold-voltage IDL = 1 mA 1) Defined by design. Not subject to production test. Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and VS = 12 V. Data Sheet 14 Rev. 2.0, 2006-07-18 BTS 7811K IS VS CL 100µF CS 470nF IFH1,2 IST LK1 DHVS IST1 ST1 6 8, 17 IST LK2 IST2 ST2 11 IH1 5 IH2 10 Diagnosis VDSH2 VDSH1 -VFH2 -VFH1 Biasing and Protection VST1 VSTL1 VSTZ1 IIH1 VST2 VSTL2 VSTZ2 RO1 IIH1 VIH1 VIH2 Gate Driver GND RO2 Gate Driver 12 16 SH2 ISH2 DL2 IDL2 IDL LK 2 VUVON SH1 ISH1 VUVOFF DL1 IDL1 6 IGND 7 ILKCL 18 IDL LK 1 VIL1 IIL1 IL1 3 IIL2 IL2 13 VIL th 1 VIL2 VIL th 2 2 14 VDSL1 VDSL2 SL1 SL2 -VFL1 -VFL2 ISCP L 1 ISCP L 2 ISL1 ISL2 Figure 4: Test Circuit HS-Source-Current Named during Short Circuit Named during LeakageCond. ISH1,2 ISCP H IDL LK Data Sheet 15 Rev. 2.0, 2006-07-18 BTS 7811K Watchdog Reset Q RQ 100 kΩ RQ 100 kΩ WD R CQ 22µF VCC TLE 4278G I D CS 10µF D01 Z39 CD 47nF DHVS ST1 RS VS=12V 6 BCR192W 8, 17 10 kΩ to µC RS ST2 11 Diagnosis Biasing and Protection 10 kΩ Can be replaced by diode when Short to Vs detection is not needed ROL 560Ohm IH1 5 IH2 10 optional for open load in off Gate Driver RO1 GND Gate Driver RO2 12 SH2 DL2 16 9 µP 7 18 IL1 3 IL2 13 GND 2 14 SL1 SL2 SH1 M DL1 Figure 5: Application Circuit Data Sheet 16 Rev. 2.0, 2006-07-18 BTS 7811K 4 Package Outlines P-TO263-15-1 (Plastic Footprint Footprint Sorts of Packing You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/packages.. SMD = Surface Mounted Device Data Sheet 17 Dimensions in mm Rev. 2.0, 2006-07-18 BTS 7811K Edition June 2006 Published by Infineon Technologies AG, Am Campeon 1-12, 87559 Neubiberg, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 18 Rev. 2.0, 2006-07-18