Previous Datasheet Index Next Data Sheet Data Sheet No.PD 6.039B IRSF3011 FULLY PROTECTED POWER MOSFET SWITCH Features · · · · · · · · Vds(clamp) Extremely Rugged for Harsh Operating Environments Over-Temperature Protection Over-Current Protection Active Drain-to-Source Clamp ESD Protection Compatible with Standard Power MOSFET Low Operating Input Current Monolithic Construction Description 50V Rds(on) 200mΩ Ids(sd) 5A Tj(sd) 155°C EAS 200mJ Applications The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165°C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn-off with inductive loads. The input current requirements are very low (300µA) which makes the IRSF3011 compatible with most existing designs based on standard power MOSFETs. IRSF3011 Block Diagram To Order · · Solenoid Driver DC Motor Driver Available Packages IRSF3011 (TO-220AB) IRSF3011L (SOT-223) Previous Datasheet Index Next Data Sheet IRSF3011 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless otherwise specified.) Minimum Maximum Vds, max Continuous Drain to Source Voltage Vin, max Units 50 Continuous Input Voltage -0.3 10 Ids Continuous Drain Current self limited Pd Power Dissipation 30 W E AS Unclamped Single Pulse Inductive Energy➁ 200 mJ Vesd1 Electrostatic Discharge Voltage (Human Body Model) 4000 V Test Conditions V Vesd2 Electrostatic Discharge Voltage (Machine Model) 1000 TJop Operating Junction Temperature Range -55 self-limited TStg Storage Temperature Range -55 175 TL Lead Temperature (Soldering, 10 seconds) 300 Tc ≤ 25°C 1000pF. 1.5kΩ 200pF, 0Ω °C Static Electrical Characteristics (Tc = 25°C unless otherwise specified.) Minimum Typical Maximum Units V ds,clamp Drain to Source Clamp Voltage R ds(on) Drain to Source On Resistance I dss Drain to Source Leakage Current V th I i,on Input Threshold Voltage Input Supply Current (Normal Operation) I i, off Input Supply Current (Protection Mode) V in, clamp V sd Input Clamp Voltage Body-Drain Diode Forward Drop➂ 50 1.5 10 54 56 155 200 115 10 2.0 0.25 0.35 0.5 0.6 10.8 1.2 62 200 10 100 250 2.5 0.6 0.85 1.0 1.2 1.5 V mΩ µA V mA V Test Conditions Ids = 10mA Ids = 6A, tp = 700 µS Vin = 5V, Ids = 2A Vin = 4V, Ids = 2A Vin = 10V, Ids = 2A Vds = 12V, Vin = 0V Vds = 50V, Vin = 0V Vds=40V,Vin=0V,Tc =150°C Vds = 5V, Ids = 10mA Vin = 5V Vin = 10V Vin = 5V Vin = 10V Iin = 10mA Ids = -9A, Rin = 1kΩ Thermal Characteristics Minimum Typical Maximum Units RΘjc RΘjA RΘjc RΘjA 2 Junction to Case Junction to Ambient Junction to PCB Junction to PCB ➀ To Order 4 62 40 60 Test Conditions °C/W TO-220AB °C/W SOT-223 Previous Datasheet Index Next Data Sheet IRSF3011 Switching ElectricalCharacteristics (VCC = 14V, Resistive Load (R L) = 5Ω, TC= 25°C.) Please refer to Figure 15 for switching time definitions. Minimum Typical Maximum Units tdon Turn-On Delay Time tr Rise Time tdoff Turn-Off Delay Time tf Fall Time 160 90 650 250 250 300 180 170 250 1200 350 350 nS Test Conditions Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Protection Characteristics (TC= 25 °C unless otherwise specified.) Minimum Typical Maximum Units Ids(sd) Tj(sd) Vprotect tIresp tIblank Ipeak Vreset treset tTresp Over-Current Shutdown Threshold Over Temperature Shutdown Threshold Min. Input Voltage for Over-temp function Over Current Response Time Over Current Blanking Time Peak Short Circuit Current Protection Reset Voltage Protection Reset Time Over-Temperature Response Time 5 155 7 165 3 4 4 16 1.3 8 12 10 Test Conditions A °C V Vin = 5V Vin = 5V, Ids = 2A µS See Figure 16 for definition See Figure 16 for definition See Figure 16 for definition A V µS See Figure 17 for definition See Figure 18 for definition Temperature Coefficients of Electrical Characteristics (Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters. Minimum Typical Maximum Units Vds,clamp Vth Vin,clamp Ids(sd) Drain-to-Source Clamp Voltage T.C. Input Threshold Voltage T.C. Input Clamp Voltage T.C. Over-Current Shutdown Threshold T.C. 18.2 -2.7 7.0 -9.8 Test Conditions Ids = 10mA mV/°C Vds = 5V, Ids = 10mA Iin = 10mA mA/°C Vin = 5V Notes: ① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer to International Rectifier Application Note AN-994. ② EAS is tested with a constant current source of 6A applied for 700µS with V in = 0V and starting Tj = 25°C. ③ Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is forward biased. To Order 3 Previous Datasheet Index Next Data Sheet IRSF3011 300 250 Ids = 4A T = 25°C 250 Vin = 4V 200 Rds(on) (mOhm) Rds(on) (mOhm) 225 175 Vin = 5V 150 Vin = 8V Vin = 5V 200 150 Vin = 10V 100 125 Vin = 10V 100 50 1 2 3 4 5 6 7 8 -50 -25 0 Ids (A) 25 50 75 100 Temperature (°C) Fig. 4 - On Resistance vs. Temperature 8 9 T = 25°C Vin = 5V 7.5 Shut Down Current (A) Shut Down Current (A) 150 Figure 4 On Resistance vs. Temperature Figure 3 On Resistance vs. Drain-to-Source Current 7 6.5 6 8 7 6 5 4 4 5 6 7 8 9 0 10 -50 Input Voltage (Volts) -25 0 25 50 75 100 125 150 Temperature (°C) Figure 5 Over-Current Shutdown Threshold vs. Input Voltage 4 125 Figure 6 Over-Current Shutdown Threshold vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRSF3011 0.6 1.6 T=25°C Vin = 5V Iin,off 0.5 1.2 Input Current (mA) Input Current (mA) 1.4 1 0.8 Iin,off 0.6 0.4 0.4 0.3 0.2 Iin,on 0.1 0.2 Iin,on 0 0 0 1 2 3 4 5 6 7 8 9 -50 10 11 -25 0 25 75 100 125 150 Temperature (°C) Input Voltage (Volts) Figure 7 Input Current vs. Input Voltage Figure 8 Input Current vs.Temperature 0.9 0.9 0.8 T = 25°C 0.7 0.6 0.5 Rise Time 0.4 0.3 0.2 0.1 Rise Time 0.8 Rise Time, On Delay (µS) Rise Time, On Delay (µS) 50 0.7 0.6 0.5 Vin = 5V 0.4 0.3 On Delay 0.2 0.1 On Delay 0 0 3 4 5 6 7 8 9 10 11 -50 Input Voltage (Volts) -25 0 25 50 75 100 125 150 Temperature (°C) Figure 9 Turn-On Characteristics vs. Input Voltage Figure 10 Turn-On Characteristics vs. Temperature To Order 5 Previous Datasheet Index Next Data Sheet IRSF3011 0.4 0.4 T = 25°C Vin = 5V 0.35 Off Delay Fall Time, Off Delay (µS) Fall Time, Off Delay (µS) 0.35 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 Off Delay 0.3 0.25 0.2 0.15 Fall Time 0.1 0.05 0 0 3 4 5 6 7 8 9 10 11 -50 -25 Input Voltage (Volts) 25 50 75 100 125 150 Temperature (°C) Figure 11 Turn-Off Characteristics vs. Input Voltage Figure 12 Turn-Off Characteristics vs. Temperature 2000 Single Pulse Energy to Failure (mJ) Reverse Drain Current (A) 10 T = 150°C T = 25°C 1 Vdd=25V 1750 Ids = 4A 1500 1250 1000 750 500 250 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 Source to Drain Voltage (Volts) 25 50 75 100 125 Starting Junction Temperature (°C) Figure 13 Source-Drain Diode Forward Voltage 6 0 Figure 14 Unclamped Single Pulse Inductive Energy to Failure vs. Starting Junction Temperature To Order 150 Previous Datasheet Index Next Data Sheet IRSF3011 Vin Vin RL = 0 Vcc = 14V 5V 50% t t Vds I ds 90% I peak 10% t tdon tr tdoff tf Figure 15 Definition of Switching Times t Iblank t Iresp Short applied before turn-on Short applied after turn-on Figure 16 Definition of Ipeak, tlblank, tlresp Vin V in 5V 5V t I ds t t < t reset t t > t reset I ds I ds(sd) t RL = 1 mH t t Tresp Vcc = 14V R L = 10 Ω Figure 17 Definition of t reset Vcc = 14V T J = TJSD + 5°C Figure 18 Definition of tTresp To Order 7 Previous Datasheet Index Next Data Sheet IRSF3011 Case Outline SOT-223 (IRSF3011L) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions do not include lead flash 4. Conforms to JEDEC outline TO-261AA LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain 8 To Order DIM A B B1 C D E e e1 H L L1 Θ MILLIMETERS MIN MAX 1.55 1.80 0.65 0.85 2.95 3.15 0.25 0.35 6.30 6.70 3.30 3.70 2.30 BSC 4.60 BSC 6.71 7.29 — 0.91 0.02 0.10 10° MAX INCHES MIN MAX 0.061 0.071 0.026 0.033 0.116 0.124 0.010 0.014 0.248 0.264 0.130 0.146 .0905 BSC 0.181 BSC 0.287 0.264 — 0.036 0.0006 0.004 10° MAX Previous Datasheet Index Next Data Sheet IRSF3011 Tape and Reel SOT-223 (IRSF3011L) NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481 and EIA-541 3. Each ∅ 330.00 (13.00) reel contains 2,500 devices. NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481-1 3. Dimension measured at hub 4. Includes flange distortion at outer edge To Order 9 Previous Datasheet Index IRSF3011 Case Outline TO-220AB (IRSF3011) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions shown are in millimeters (inches) 4. Conforms to JEDEC outline TO-251AA 5. Dimension does not include solder dip. Solder dip max. +0.16 (.006) LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain 10 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet IRSF3011 Application Information Introduction Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maximum values can be narrowed, resulting in better utilization of the device and lower cost. ESD protection also reduces the off-circuit failures during handling and assembly. General Description The IRSF3011 is a fully protected monolithic N-channel logic level POWER MOSFET with 200mΩ (max) on-resistance. The built-in protections include over-current, over-temperature, ESD and over-voltage. The over-current and over-temperature protections make the IRSF3011 indestructible under any load conditions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3011 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads. The TO-220 packaged IRSF3011 offers an easy upgrade with direct pin-to-pin replacement from non-protected devices. Block Diagram Figure A1. Block Diagram Using higher input voltage will improve the turn-on time but it will not affect the turn-off switching speed. The typical waveforms at 7V input voltage are shown in Figure A3. In typical switching applications (below 60kHz) the difference in switching losses between the IRSF3011 and the same size standard MOSFET is negligible. As illustrated in figure A1, a zener diode between the input and the source provides the ESD protection for the input and also limits the voltage applied to the input to 10V. Input voltage 5V/div. The R-S flip-flop memorizes the occurrence of an error condition and controls the Q2 and Q3 switches. The flipflop can be cleared by holding the input low for the specified minimum duration. COMP1 and COMP2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. Either comparator can reset the fault flip-flop and turn Q1 off. During fault condition, Q2 disconnects the gate of Q1 from the input, and Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on when the drain to source voltage exceeds 55V. Drain voltage 5V/div. Drain Current: 1A/div. Time: 1µsV/div. Switching Characteristics In the IRSF3011, the control logic and the protection circuits are powered from the input pin. When positive voltage appears at the input pin, the R-S flip-flop turns Q2 on and connects the gate of the main device to the input. The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in Figure A2. Figure A2. Waveforms switching clamped inductive load using 5V input voltage Over-Current Protection When the drain current exceeds the preset limit, the protection circuit resets the internal flip-flop and turns Q1 off. Normal operation can be restored by holding the input volt- To Order 11 Previous Datasheet Index Next Data Sheet IRSF3011 Input voltage 5V/div. Input voltage 5V/div. Drain voltage 5V/div. Drain voltage 5V/div. Drain Current: 2A/div. Drain Current: 1A/div. Time: 10µsV/div. Time: 1µsV/div. Figure A3. Switching waveforms with 7V Input voltage Figure A4. Waveforms at over-current shut-down age below the specified threshold level (approx. 1.3V) for the specified minimum treset time. Input voltage 10V/div. The typical waveforms at over-current shut-down are shown in Figure A4. After turn-on, the current in the inductor at the drain starts ramping up. At about 7A, the over-current protection shuts down the device. Drain voltage 5V/div. Over-Temperature Protection Figure A5 illustrates the operation of the over-temperature protection. The IRSF3011 switches a 2Ω resistive load to a 10V power supply. When the thermal balance is established, the junction temperature is limited on a pulse-by-pulse basis. Over-Voltage Protection When the drain-to-source voltage exceeds 55V, the zener diode between gate and drain turns the IRSF3011 on before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can safely withstand during inductive load turn-offs compared Drain Current: 2A/div. Time: 10µsV/div. Figure A5. Over-temperature shut-down to avalanche breakdown. Thus the device can be used for fast de-energization of inductive loads. The absorbed energy is limited only by the maximum junction temperature. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/96 12 To Order