IRF GA75TS60U

PD -50050D
GA75TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Ultra-FastTM Speed IGBT
Features
VCES = 600V
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 75A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
Units
600
75
150
150
150
±20
2500
285
150
-40 to +150
-40 to +125
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
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Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
Typ.
Max.
—
—
0.1
—
—
200
0.44
0.70
—
6.0
5.0
—
Units
°C/W
N. m
g
1
05/20/02
GA75TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units
Conditions
600
—
—
VGE = 0V, IC = 1mA
—
1.7 2.2
VGE = 15V, IC = 75A
— 1.76 —
V
VGE = 15V, IC = 75A, TJ = 125°C
Gate Threshold Voltage
3.0
—
6.0
IC = 0.5mA
Temperature Coeff. of Threshold Voltage —
-11
— mV/°C VCE = V GE, IC = 500µA
Forward Transconductance „
—
83
—
S
VCE = 25V, I C = 75A
Collector-to-Emitter Leaking Current
—
—
1.0
mA
VGE = 0V, VCE = 600V
—
—
10
VGE = 0V, VCE = 600V, TJ = 125°C
Diode Forward Voltage - Maximum
—
3.3
—
V
IF = 75A, VGE = 0V
—
3.1
—
IF = 75A, VGE = 0V, TJ = 125°C
Gate-to-Emitter Leakage Current
—
— 250
nA
VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
340
48
120
110
94
250
180
1.95
4.4
6.35
7880
770
98
133
94
6274
2061
Max. Units
Conditions
510
VCC = 400V, VGE = 15V
72
nC
IC = 75A
170
TJ = 25°C
—
RG1 = 27Ω, RG2 = 0Ω,
—
ns
IC = 75A
—
VCC = 360V
—
VGE = ±15V
—
mJ
—
12.6
—
VGE = 0V
—
pF
VCC = 30V
—
ƒ = 1 MHz
—
ns
IC = 75A
—
A
RG1 = 27Ω
—
nC
RG2 = 0Ω
—
A/µs VCC = 360V
di/dt =1300A/µs
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GA75TS60U
70
For both:
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
G
ate drive
as specified
Power
Dissipation
= 65 W
LOAD CURRENT (A)
60
50
P ow e r Dis sip ation = 270 W
40
30
20
10
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
100
25 o C
TJ = 150
TJ = 25 o C
V
= 15V
20µs PULSE WIDTH
GE
10
1.0
1.5
2.0
2.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 150
25 o C
TJ = 25 o C
10
V
= 50V
5µs PULSE WIDTH
V
CE = 25V
25V
CC
80µs PULSE WIDTH
1
5.0
6.0
7.0
8.0
9.0
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
GA75TS60U
80
3.0
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
60
40
20
0
25
50
75
100
125
150
I C = 150 A
2.0
I C = 75 A
37.5A
I C =37.5
A
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
, JunctionTemperature
Temperature(°C)
( °C)
TTJ J, Junction
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
T h erm al Im p e d a n ce - Z
th JC
1
0.1
D = 0 .5 0
0 .2 0
0.1 0
0.0 5
0 .0 2
0 .0 1
PDM
t
S in g le P u ls e
(Th e rm a l R e s is ta n c e )
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , R ec ta n g ular Pu ls e D u ratio n (S e co n d s )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA75TS60U
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
12000
Cies
10000
8000
6000
C
oes
4000
Cres
2000
20
VGE , Gate-to-Emitter Voltage (V)
14000
0
1
10
12
8
4
0
100
0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
8
7
6
5
20
30
40
RG
, Gate
RG1
, GateResistance
Resistance(Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
VCC = 360V
VGE = 15V
TJ = 125°C
25 ° C
9 I C = 75A
10
100
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
VCC = 400V
I C = 75A
16
VCE , Collector-to-Emitter Voltage (V)
10
50
RG1
Ω;RG2 = 0 Ω
= Ohm
G =27
VGE = 15V
VCC = 360V
IC = 150 A
10
IC = 75 A
IC = 37.5 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
GA75TS60U
Total Switching Losses (mJ)
Ω;RG2 = 0
RG
Ohm
G1 ==27
T J = 125 ° C
VCC = 360V
20 VGE = 15V
Ω
200
IC , Collector-to-Emitter Current ( A )
25
15
10
5
160
120
40
80
120
160
200
SAFE OPERATING AREA
80
40
0
0
V GGE E
= 20V
T J = 125°C
V C E m easured at term inal (Peak V oltage)
A
0
240
0
I C , Collector-to-emitter Current (A)
100
200
300
400
500
600
700
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Reverse Bias SOA
1000
I F = 15 0A
10000
I F = 75 A
I F = 38 A
8000
Q R R - (nC )
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
12000
100
T J = 125 °C
T J = 25°C
6000
4000
2000
VR = 36 0 V
TJ = 12 5 °C
TJ = 25 °C
10
1.0
2.0
3.0
4.0
5.0
F o r w a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
0
500
1000
1500
2000
d i f /dt - (A /µs)
Fig. 14 - Typical Stored Charge vs. dif/dt
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GA75TS60U
200
140
I F = 15 0A
I F = 1 5 0A
IF = 75A
120
I F = 3 8A
I F = 75A
IF = 38A
160
I IR R M - (A )
t rr - (ns)
100
120
80
60
40
80
20
VR = 36 0 V
TJ = 12 5 °C
TJ = 25 °C
40
500
1000
1500
2000
d i f /d t - (A /µ s)
Fig. 15 - Typical Reverse Recovery vs. dif/dt
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0
500
VR = 36 0 V
TJ = 12 5 °C
TJ = 25 °C
1000
1500
2000
d i f /d t - (A /µs)
Fig. 16 - Typical Recovery Current vs. dif/dt
7
GA75TS60U
90% Vge
+Vge
Vce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
td (o ff)
tf
Eoff =
∫
t1 + 5 µ S
V c e icIcd tdt
Vce
t1
Fig. 17 - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Icddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
E o n = VVce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Eon, td(on), tr
8
∫
t4
VVd
d idIc
d t dt
t3
t4
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, Irr
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GA75TS60U
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 21. Macro Waveforms for Figure 17's Test Circuit
RL=
480V
4 X IC @25°C
0 - 480V
Figure 22. Pulsed Collector Current
TestCircuit
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9
GA75TS60U
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
R See fig. 17
S For screws M6.
T For screws M5.
U Pulse width 50µs; single shot.
Case Outline — INT-A-PAK
94.70
93.70
80.30
79.70
3.689]
[3.728
NOTES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONTROL LING DIMENS ION: MILLIMETER.
[ ]
3.161
3.138
2X 23.50
22.50
.886]
[.925
4.50
3.50
11
10
34.70
33.70
.138]
[.177
6
7
1.327]
[1.366
17.50
16.50
1
2
8
9
5
4
3X M5
8 [.314]
MAX.
42.00
41.00
0.15 [.0059] CONVEX
92.10
91.10
3.587]
[3.626
.650]
[.689
3
1.614]
[1.654
6.80
2X Ø 6.20
8.00
6.60
.260]
[.315
24.00
23.00
.906]
[.945
.244]
[.267
4X FAST ON TAB (110)
2.8 x 0.5 [.110 x .020]
30.50
29.00
8.65
7.65
1.142 ]
[1.201
2X 13.30
12.70
.301 ]
[.341
32.00
31.00
.500]
[.524
1.220]
[1.260
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
10
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