IRF PVD1354

Replaced by PVD13N
Data Sheet No. PD10024E
Series PVD13
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 500mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering
the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermocouple level to 100 volts peak DC. Signal frequencies into the RF range are easily controlled and
switching rates up to 2kHz are achievable. The extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
1010 Operations
300µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
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Part Identification
Part Number
Operating
Voltage (DC)
Sensitivity
0 – 100V
5 mA
PVD1352
PVD1354
Off-State
Resistance
108 Ohms
1010 Ohms
(BOSFET is a trademark of International Rectifier)
5AHEAI28,!
Replaced by PVD13N
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVD1352
Minimum Control Current (see figures 1 and 2)
For 300mA Continuous Load Current
For 400mA Continuous Load Current
For 150mA Continuous Load Current
PVD1354
DC
[email protected]°C
[email protected]°C
[email protected]°C
2.0
5.0
5.0
Maximum Control Current for Off-State Resistance at 25°C
Control Current Range (Caution: current limit input LED. See figure 6)
Units
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Maximum Reverse Voltage
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OUTPUT CHARACTERISTICS
PVD1352
Operating Voltage Range
Maxiumum Load Current 40°C (see figures 1and 2)
PVD1354
Units
0 to + 100
V(PEAK)
500
mA(DC)
300
µs
50
µs
Response Time @25°C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC
Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 200 mA Load, 5mA Control
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Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)
10
10
Max. Thermal Offset Voltage @ 5.0mA Control
Ω
1.5
10
0.2
Ω
µvolts
Min. Off-State dv/dt
1000
V/µs
Output Capacitance
12
pF @ 50VDC
2500
VRMS
GENERAL CHARACTERISTICS (PVD1352 and PVD1354)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Units
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
Operating
-40 to +85
Storage
-40 to +100
2
°C
5AHEAI28,!
Load Current (mA)
Max. Load Current (mA)
Replaced by PVD13N
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ILED (mA)
Ambient Temperature (°C)
Figure 2. Typical Control Current Requirements
Load Current (mA)
RDS (on) (Normalized to 25°C)
Figure 1. Current Derating Curves
Ambient Temperature (°C)
VDS (Volts)
Figure 4. Typical Normalized On-Resistance
Figure 3.Typical On Characteristics
3
5AHEAI28,!
IDOff/IDOff 25°C
Input Current (mA)
Replaced by PVD13N
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LED Forward Voltage Drop (Volts DC)
Ambient Temperature (°C)
Figure 6. Input Characteristics
(Current Controlled)
ILED (mA)
Figure 5. Normalized Off-State Leakage
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
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5AHEAI28,!
Typical Capacitance (picofarads)
Normalized Transfer Ratio
Normalized Control Threshold Current
Replaced by PVD13N
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Ambient Temperature °C
VDS Drain to Source Voltage
Figure 9. Typical Control Threshold and Transfer Ratio
Figure 10. Typical Output Capacitance
Wiring Diagram
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5AHEAI28,!
Replaced by PVD13N
Case Outline
(Dimensions in millimeters (inches))
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Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 12/6/2000
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