SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 2 3 1 23 P-TO220-3-31 P-TO220-3-1 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP16N50C3 Package PG-TO220 Ordering Code Q67040-S4583 Marking 16N50C3 SPI16N50C3 PG-TO262 Q67040-S4582 16N50C3 SPA16N50C3 PG-TO220FP SP000216351 16N50C3 Maximum Ratings SPA SPP_I Continuous drain current Unit Value Symbol Parameter A ID TC = 25 °C 16 161) TC = 100 °C 10 101) 48 48 EAS 460 460 EAR 0.64 0.64 Avalanche current, repetitive tAR limited by Tjmax IAR 16 16 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 160 34 Operating and storage temperature Reverse diode dv/dt 6) Tj , Tstg dv/dt Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID puls A mJ ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Rev. 3.2 page 1 -55...+150 15 W °C V/ns 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.78 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA FP Tsold - - 80 - - 260 Soldering temperature, wavesoldering K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at T j=25°C unless otherwise specified Symbol Conditions Parameter Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=16A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=675µA, VGS=VDS Zero gate voltage drain current I DSS VDS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.2 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=10A Tj=25°C - 0.25 0.28 Tj=150°C - 0.68 - f=1MHz, open drain - 1.5 - page 2 nA 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 14 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=10A Input capacitance Ciss V GS=0V, V DS=25V, - 1600 - Output capacitance Coss f=1MHz - 800 - Reverse transfer capacitance Crss - 30 - - 64 - - 124 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=16A, RG =4.3Ω - 8 - Turn-off delay time td(off) - 50 - Fall time tf - 8 - - 7 - - 36 - - 66 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=16A VDD=380V, ID=16A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=16A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 3.2 page 3 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics Symbol Parameter Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 16 - - 48 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , - 420 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 7 - µC Peak reverse recovery current Irrm - 40 - A Peak rate of fall of reverse dirr /dt - 1100 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_I SPA Rth1 0.012 0.012 Rth2 0.023 Rth3 Symbol Value Unit SPP_I SPA Cth1 0.0002495 0.0002495 0.023 Cth2 0.0009406 0.0009406 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.149 0.176 Cth4 0.00362 0.00362 Rth5 0.17 0.371 Cth5 0.009484 0.008025 Rth6 0.069 2.522 Cth6 0.077 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.2 page 4 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 170 SPP16N50C3 36 W W 140 28 Ptot Ptot 120 100 24 20 80 16 60 12 40 8 20 4 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( V DS ) ID = f (VDS) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 °C 2 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 3.2 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 V VDS 10 3 page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2009-12-22 3 SPP16N50C3 SPI16N50C3, SPA16N50C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (t p) ZthJC = f (t p) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 10 -2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 10 -1 10 -3 s tp 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 35 60 A 20V 7V 6.5V A 20V 7V 6V 25 40 6V ID ID 1 s 10 5V 20 30 5.5V 15 4.5V 20 10 5V 4V 10 0 0 5 4.5V 5 10 15 V 25 VDS Rev. 3.2 page 6 0 0 5 10 15 V 25 VDS 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 10 A, VGS = 10 V 2 1.6 SPP16N50C3 Ω 4V 4.5V 5V 6V 1.2 RDS(on) RDS(on) Ω 8V 20V 1.2 1 0.8 0.8 0.6 0.4 98% 0.4 typ 0.2 0 0 5 10 15 A 20 0 -60 30 -20 20 60 100 ID 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 16 A pulsed parameter: tp = 10 µs 60 16 A SPP16N50C3 V 50 Tj = 25°C 45 12 VGS 40 ID °C 35 Tj = 150°C 30 0,2 VDS max 10 0,8 VDS max 8 25 6 20 15 4 10 2 5 0 0 Rev. 3.2 1 2 3 4 5 6 7 8 V 10 VGS page 7 0 0 10 20 30 40 50 60 70 80 nC 100 Q Gate 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 2 SPP16N50C3 10 16 A A 12 1 IF IAR 10 10 Tj(start) = 25°C 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 Tj(start) = 125°C 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 8 , V DD = 50 V 0.5 600 SPP16N50C3 V V(BR)DSS EAS mJ 0.3 570 560 550 540 530 520 0.2 510 500 490 0.1 480 470 460 0 20 Rev. 3.2 40 60 80 100 120 160 °C Tj page 8 450 -60 -20 20 60 100 °C 180 Tj 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.64mJ parameter: VGS=0V, f=1 MHz 10 4 450 pF W Ciss 10 3 300 C PAR 350 250 10 2 Coss 200 150 10 1 100 Crss 50 0 2 10 10 3 10 4 10 5 6 Hz 10 10 0 0 100 200 300 V 500 VDS f 19 Typ. Coss stored energy Eoss=f(VDS) 9 µJ Eoss 7 6 5 4 3 2 1 0 0 100 200 300 V 500 VDS Rev. 3.2 page 9 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Definition of diodes switching characteristics Rev. 3.2 page 10 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 3.2 page 11 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3 (Fully isolated) 24 Dimensions in mm/ inches Rev. 3.2 page 12 2009-12-20 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.2 page 13 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 page 14 2009-12-22