BUZ 101 S Preliminary data SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 S 55 V 22 A 0.06 Ω TO-220 AB Q67040-S4013-A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values Unit A TC = 25 °C 22 TC = 100 °C 16 IDpuls Pulsed drain current TC = 25 °C 88 EAS Avalanche energy, single pulse mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C 90 Avalanche current,limited by Tjmax IAR 22 A Avalanche energy,periodic limited by Tjmax EAR 5.5 mJ Reverse diode dv/dt dv/dt kV/µs IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 °C Semiconductor Group ± 20 V W 55 1 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 2.7 Thermal resistance, junction - ambient RthJA ≤ 62 IEC climatic category, DIN IEC 68-1 K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 2.1 3 4 VGS(th) VGS=VDS, ID = 40 µA Zero gate voltage drain current V IDSS µA VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 16 A Semiconductor Group nA - 2 0.04 0.06 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 16 A Input capacitance 7 pF - 490 615 - 170 215 - 95 120 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Rise time - 10 15 - 25 38 - 20 30 - 20 30 tr VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V Gate charge at 7.0 V 0.75 - 13 20 - 17 26 V(plateau) VDD = 40 V, ID = 22 A Semiconductor Group 0.5 Qg(total) VDD = 40 V, ID = 22 A, VGS =0 to 10 V Gate plateau voltage - Qg(7) VDD = 40 V, ID = 22 A, VGS =0 to 7 V Gate charge total nC V - 3 5.9 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 88 V 1.2 1.8 trr ns - 55 85 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 22 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 44 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.12 0.18 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 60 24 W A 50 Ptot 20 ID 45 18 40 16 35 14 30 12 25 10 20 8 15 6 10 4 5 2 0 0 20 40 60 80 100 120 140 °C 180 TC Semiconductor Group 0 0 20 40 60 80 100 120 140 °C 180 TC 5 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 Ptot = 55W 0.19 l k A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Ω j VGS [V] a 4.0 40 b 4.5 c 5.0 h d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 35 30 g 25 f i 20 e 15 9.0 k 10.0 l 20.0 e f g 0.10 0.08 0.06 h i 0.04 0.02 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 d 0.12 c 5 c 0.14 d 10 b 0.16 RDS (on) 8.0 j a V 5.0 VDS 0.00 0 j VGS [V] = a 5.0 4.0 4.5 5 b 5.5 c 6.0 10 d 6.5 15 e f 7.0 7.5 20 g 8.0 25 h i j 9.0 10.0 20.0 30 35 A 45 ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 ID 45 40 35 30 25 20 15 10 5 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 16 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 40 µA 0.20 4.6 Ω V 98% 4.0 RDS (on)0.16 VGS(th) 0.14 3.6 3.2 0.12 2.8 0.10 2.4 98% typ 2% 2.0 0.08 1.6 typ 0.06 1.2 0.04 0.8 0.02 0.00 -60 0.4 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 04/Nov/1997 BUZ 101 S Preliminary data SPP22N05 Avalanche energy EAS = f (Tj) Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 22 A parameter:ID=22A,VDD =25 V RGS =25 Ω , L = 372µH 100 16 mJ EAS V 80 VGS 12 70 10 60 0,2 VDS max 50 0,8 VDS max 8 40 6 30 4 20 2 10 0 20 40 60 80 100 120 140 °C Tj 180 0 0 4 8 12 16 nC 24 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 04/Nov/1997