IRF IRG4RC10U

PD - 91572A
IRG4RC10U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
VCES = 600V
VCE(on) typ. = 2.15V
G
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
8.5
5.0
34
34
±20
110
38
15
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
Max.
–––
–––
0.3 (0.01)
3.3
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
8/30/99
IRG4RC10U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage „ 14
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.54 —
V/°C VGE = 0V, IC = 1.0mA
— 2.15 2.6
IC = 5.0A
VGE = 15V
Collector-to-Emitter Saturation Voltage
— 2.61 —
IC = 8.5A
See Fig.2, 5
V
— 2.30 —
IC = 5.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-8.7
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance …
2.8
4.2
—
S
VCE = 100V, IC = 5.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
—
—
2.0
µA
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
IC = 5.0A
2.6 4.0
nC
VCC = 400V
See Fig. 8
5.8 8.7
VGE = 15V
19
—
11
—
TJ = 25°C
ns
116 240
IC = 5.0A, VCC = 480V
81 180
VGE = 15V, RG = 100Ω
0.08 —
Energy losses include "tail"
0.16 —
mJ See Fig. 9, 10, 14
0.24 0.36
18
—
TJ = 150°C,
14
—
IC = 5.0A, VCC = 480V
ns
180
—
VGE = 15V, RG = 100Ω
150
—
Energy losses include "tail"
0.36 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
270
—
VGE = 0V
21
—
pF
VCC = 30V
See Fig. 7
3.5
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4RC10U
4.0
F or b ot h:
3.0
Load Current ( A )
T ria ng u la r w av e:
D uty c ycle : 5 0%
T J = 1 25 °C
T A = 5 5°C
Ga te drive as s p e cified
I
P ow e r D is s ip at i on = 1 .4 W
Typ ic al F R -4 b oa rd m o u n t
C lam p vo lta g e:
80% o f rate d
S q u are w ave:
2.0
6 0% o f rate d
v o lta g e
I
1.0
Ide al d io des
A
0.0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
TJ = 25 oC
TJ = 150 oC
10
1
V GE = 15V
20µs PULSE WIDTH
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
10
TJ = 150 o C
TJ = 25 oC
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
12
13
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4RC10U
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
I C = 10 A
4.0
3.0
I C = 5.05 A
A
I C = 2.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10U
500
VGE , Gate-to-Emitter Voltage (V)
400
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
300
200
Coes
100
VCC = 400V
I C = 5.0A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
0.26 I C = 5.0A
0.22
0.18
0.14
0.10
60
70
80
90
RG,,Gate
Gate Resistance
Resistance (Ohm)
(Ω)
RG
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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8
12
16
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
50
4
QG , Total Gate Charge (nC)
100Ω
RG = 100Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
A
IC = 5.05 A
IC = 2.5 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4RC10U
RG
TJ
VCC
0.8 VGE
100
= 100Ω
100Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.0
0.6
0.4
0.2
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
0.0
0
2
4
6
8
10
1
12
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
L
10
1000
Fig. 12 - Turn-Off SOA
D .U .T.
VC *
50V
100
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
RL =
0 - 480V
10 0 0V
480V
4 X I [email protected]°C
480µF
960V

‚
* Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax )
* Note: Due to the 5 0V pow e r supply, puls e w idth and inductor
w ill incre as e to obta in rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
6
ƒ
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IRG4RC10U

‚
9 0%
1 0%
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.0 94 )
2.19 (.0 86 )
6.73 (.2 65)
6.35 (.2 50)
-A1.2 7 (.050 )
0.8 8 (.035 )
5.46 (.2 15 )
5.21 (.2 05 )
1.1 4 (.045 )
0.8 9 (.035 )
0.58 (.0 23)
0.46 (.0 18)
4
6 .4 5 (.24 5)
5 .6 8 (.22 4)
6.2 2 (.245 )
5.9 7 (.235 )
1.02 (.0 40)
1.64 (.0 25)
1
2
10 .42 (.41 0)
9.40 (.3 70)
0 .5 1 (.02 0)
M IN .
-B1.5 2 (.0 60 )
1.1 5 (.0 45 )
3X
1 .1 4 (.04 5)
2 X 0 .7 6 (.03 0)
0.8 9 (.035 )
0.6 4 (.025 )
0 .25 (.01 0)
2 .28 (.09 0)
4.5 7 (.1 80 )
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LEAD ASSIGNMENTS
3
M A M B
L EA D AS
NM EN TS
1 -SIG
GATE
1 -2 G- A
TE
COLLECTOR
2 - D R A IN
3 - EMITTER
3 - S O U R CE
4 - COLLECTOR
4 - D R A IN
0.5 8 (.023 )
0.4 6 (.018 )
N O TES :
1 D IM E N SIO N ING & TO L ER A NC IN G P ER AN S I Y 14.5 M , 19 82.
2 C O N TR O LL IN G D IM E N SIO N : IN C H.
3 C O N FO R M S TO JE DE C O U TL IN E TO -252 AA .
4 D IM E N SIO N S SH O W N A RE BE FO R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.0 06 ).
7
IRG4RC10U
Tape & Reel Information
TO-252AA
TR
TRR
1 6.3 ( .641 )
1 5.7 ( .619 )
12 .1 ( .4 76 )
11 .9 ( .4 69 )
F E E D D IR E C T IO N
TR L
16.3 ( .64 1 )
15.7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
NO T ES :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
13 IN C H
16 m m
NOTES :
1. O U T LIN E C O N F O R M S T O E IA -481 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
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