BCV61 NPN Silicon Double Transistor 3 To be used as a current mirror Good thermal coupling and VBE matching 4 High current gain Low collector-emitter saturation voltage 2 C1 (2) C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration Package BCV61A 1Js 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 30 VCBO 30 Emitter-base voltage VEBS 6 DC collector current IC 100 Peak collector current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V (transistor T1) Collector-base voltage (open emitter) (transistor T1) mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 170 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 30 - - V(BR)CBO 30 - - V(BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 µA hFE 100 - - - 110 180 220 200 290 450 420 520 800 DC Characteristics of T1 Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 0.1 mA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V hFE BCV61A BCV61B BCV61C Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA Base-emitter voltage 1) - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base-emitter saturation voltage 1) VBEsat VBE(ON) 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Characteristics Base-emitter forward voltage V VBES IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 0.4 - - - - 1.8 - IC1 / IC2 at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 IE2 - 5 - mA Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 3 - pF Ceb - 8 - F - 2 - dB h11e - 4.5 - k h12e - 2 - 10-4 h21e 100 - 900 h22e - 30 - Thermal coupling of transistor T1 and transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1 AC characteristics for transistor T1 VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance - S IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 Jul-10-2001 BCV61 Test circuit for current matching A Ι C1 VCE1 ... 2 1 T1 Ι E2 = constant T2 3 4 VCO VCO EHN00001 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of V CE1 at specified R E range with I E2 as parameter under condition of I C1/I E2 = 1.3 A Ι C1 VCE1 ... 2 T1 1 Ι E2 = constant T2 3 RE 4 RE EHN00002 Note: BCV61 with emitter resistors 4 Jul-10-2001 BCV61 Total power dissipation Ptot = f(TS) Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 350 BCV 61 EHP00942 Ptot max 5 Ptot DC mW D= tp T tp T 250 P tot 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 200 150 10 1 100 5 50 0 0 15 30 45 60 75 90 105 120 10 0 10 -6 °C 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jul-10-2001