Bulletin I2183 11/04
SAFEIR Series
40TPS16PbF
PHASE CONTROL SCR
VT
Lead-Free ("PbF" suffix)
< 1.45V @ 40A
ITSM = 500A
VRRM = 1600V
Description/ Features
The 40TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
reliable operation up to 125°C junction temperature.
Low Igt parts available.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Package Outline
Major Ratings and Characteristics
Characteristics
IT(AV)
Sinusoidal
Values
Units
35
A
55
A
1600
V
waveform
IRMS
VRRM/ VDRM
ITSM
500
A
1.45
V
dv/dt
1000
V/µs
di/dt
100
A/µs
- 40 to 125
°C
VT
@ 40 A, TJ = 25°C
TJ
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TO-247AC
1
40TPS16PbF SAFEIR Series
Bulletin I2183 11/04
Voltage Ratings
Part Number
VRRM/ V DRM, max. repetitive
VRSM , maximum non repetitive
IRRM/ I DRM
peak and off-state voltage
peak reverse voltage
125°C
V
V
mA
1600
1700
10
40TPS16PbF
Absolute Maximum Ratings
Parameters
IT(AV)
IT(RMS) Max. Continuous RMS
Conditions
40TPS16 Units
Max. Average On-state Current
35
A
@ TC = 79° C, 180° conduction half sine wave
A
10ms Sine pulse, rated VRRM applied
Initial
10ms Sine pulse, no voltage reapplied
TJ = TJ max.
55
On-state Current As AC switch
ITSM
2
It
Max. Peak One Cycle Non-Repetitive
500
Surge Current
600
2
Max. I t for Fusing
1250
2
A s
1760
2
I √t
2
Max. I √t for Fusing
VT(TO)1 Low Level Value of Threshold
10ms Sine pulse, rated VRRM applied
10ms Sine pulse, no voltage reapplied
12500
2
A √s
t = 0.1 to 10ms, no voltage reapplied
1.02
V
TJ = 125°C
Voltage
VT(TO)2 High Level Value of Threshold
1.23
Voltage
rt1
Low Level Value of On-state
9.74
mΩ
Slope Resistance
rt2
High Level Value of On-state
7.50
Slope Resistance
VTM
Max. Peak On-state Voltage
1.85
V
di/dt
Max. Rate of Rise of Turned-on Current
100
A/µs
mA
@ 110A, TJ = 25°C
TJ = 25°C
IH
Max. Holding Current
150
IL
Max. Latching Current
300
IRRM /
Max. Reverse and Direct
0.5
TJ = 25°C
IDRM
Leakage Current
10
TJ = 125°C
Max. Rate of Rise
1000
dv/dt
V/µs
VR = rated VRRM/ VDRM
TJ = TJ max., linear to 80% V DRM , R g-k = open
of Off-state Voltage
2
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40TPS16PbF SAFEIR Series
Bulletin I2183 11/04
Triggering
Parameters
PGM Max. peak Gate Power
10
PG(AV) Max. average Gate Power
2.5
IGM
Max. peak Gate Current
IGT
W
2.5
A
10
V
- VGM Max. peak negative Gate Voltage
VGT
Conditions
40TPS16 Units
Max. required DC Gate Voltage
4.0
TJ = - 40°C
Anode supply = 6V
to trigger
2.5
TJ = 25°C
resistive load
1.7
TJ = 125°C
Max. required DC Gate Current
270
to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
40
TJ = - 40°C
TJ = 25°C, for 40TPS08A
VGD
Max. DC Gate Voltage not to trigger
0.25
V
IGD
Max. DC Gate Current not to trigger
6
mA
TJ = 125°C, V DRM = rated value
Thermal-Mechanical Specifications
Parameters
40TPS16 Units
TJ
Max. Junction Temperature Range
- 40 to 125
Tstg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
0.6
Conditions
°C
°C/W
DC operation
to Case
RthJA Max. Thermal Resistance Junction
40
to Ambient
RthCS Max. Thermal Resistance Case
0.2
Mounting surface, smooth and greased
to Heatsink
wt
Approximate Weight
T
Mounting Torque
6 (0.21)
g (oz.)
Min.
6 (5)
Kg-cm
Max.
12 (10)
(lbf-in)
Case Style
TO-247AC
Marking Device
40TPS16
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3
40TPS16PbF SAFEIR Series
40TPS.. Series
R thJC (DC) = 0.6 °C/ W
120
110
Conduction Angle
100
30°
90°
120°
180°
80
0
10
20
30
40
110
Conduction Period
100
30°
90
60°
90°
120°
80
180°
DC
70
0
10
20
30
40
50
Average On-state Current (A)
RMS Limit
30
20
Conduction Angle
40TPS.. Series
TJ= 125°C
10
0
5
10
15
20
25
30
35
60
80
DC
180°
120°
90°
60°
30°
70
60
50
40 RMSLimit
30
Conduction Period
20
40TPS.. Series
TJ = 125°C
10
0
40
0
10
20
30
40
50
60
Avera ge On-sta te Current (A)
Avera ge On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
550
At Any Ra ted Load Condition And With
Rated V RRM Ap plied Following Surge.
Initia l TJ= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
500
450
400
350
300
250
40TPS.. Series
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
120
Fig. 2 - Current Rating Characteristics
180°
120°
90°
60°
30°
40
40TPS.. Series
RthJC (DC) = 0.6 °C/ W
Average On-state Current (A)
60
50
130
Fig. 1 - Current Rating Characteristics
Maximum Averag e On-state Power Loss (W)
70
0
Peak Half Sine Wave On-state Current (A)
60°
90
Maximum Allowable Case Temperature (°C)
130
Peak Half Sine Wa ve On-state Current (A)
Maximum Avera g e On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I2183 11/04
600
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reap p lied
Rated VRRM Reap p lied
550
500
450
400
350
300
40TPS.. Series
250
0.01
0.1
1
Pulse Tra in Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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40TPS16PbF SAFEIR Series
Bulletin I2183 11/04
Instanta neous On-sta te Current (A)
100
10
TJ= 25°C
TJ= 125°C
40TPS.. Series
1
0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30% rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4) (3)
40TPS..
0.01
0.1
(2) (1)
Frequenc y Limited by PG(AV)
1
10
100
1000
Instantaneous Gate Current (A)
Transient Thermal Impeda nc e Z thJC (°C/W)
Fig. 8 - GateCharacteristics
1
0.1
Steady State Value
(DC Opera tion)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
40TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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5
40TPS16PbF SAFEIR Series
Bulletin I2183 11/04
Outline Table
15 .90 (0 .626 )
3. 65 (0 .14 4)
3. 55 (0 .13 9)
DIA.
5. 30 ( 0 .20 9)
4.70 ( 0.185)
15 .30 (0 .602 )
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 ( 0 .22 5)
5.30 ( 0.208)
20 .30 ( 0 .800 )
19 .70 ( 0 .775 )
5.50 ( 0.217)
4. 50 ( 0 .17 7)
1
2
(2 PLCS.)
3
14. 80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0 .17 0)
3. 70 (0 .14 5)
1. 40 (0 .05 6)
2. 20 ( 0 .08 7)
2. 40 (0 .09 5)
M AX .
2
(A)
M AX.
1. 00 (0 .03 9)
0.80 ( 0.032)
0. 40 (0 .21 3)
10. 94 ( 0.430)
10 .86 ( 0 .427 )
1 (K) (G) 3
Dimensions in millimeters and inches
Marking Information
EXAMPLE: THIS IS A 40TPS16
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
6
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
40TPS16
P035H
56
ASSEMBLY
LOT CODE
57
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
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40TPS16PbF SAFEIR Series
Bulletin I2183 11/04
Ordering Information Table
Device Code
40
T
P
S
1
2
3
4
16 PbF
5
6
1
-
Current Rating (40 = 40A)
2
-
Circuit Configuration:
T = Thyristor
3
-
Package:
4
-
Type of Silicon:
5
-
Voltage Rating (16 = 1600V)
6
-
y none = Standard Production
T = TO-247
S = Standard Recovery Rectifier
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
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