IPA50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS(on),max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant TO220 Full PAK • Quailfied according to JEDEC0) for target applications CoolMOS CP is designed for: • Hard and softswitching SMPS topologies • CCM PFC for Notebook adapter, PDP and LCD TV • PWM for Notebook adapter, PDP and LCD TV Type Package Marking IPA50R350CP PG-TO220FP 5R350P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 1) ID Value T C=25 °C 10 T C=100 °C 6 Pulsed drain current2) I D,pulse T C=25 °C 22 Avalanche energy, single pulse E AS I D=3.7 A, V DD=50 V 246 Avalanche energy, repetitive t AR2),3) E AR I D=3.7 A, V DD=50 V 0.37 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.1 Unit A mJ 3.7 A V DS=0...400 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 32 W -55 ... 150 °C M2.5 screws page 1 60 Ncm 2009-07-23 IPA50R350CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current 1) IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 5.6 T C=25 °C A 22 15 V/ns Values Unit min. typ. max. - - 3.9 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 500 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.37 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=500 V, V GS=0 V, T j=25 °C - - 1 V DS=500 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=5.6 A, T j=25 °C - 0.32 0.35 Ω V GS=10 V, I D=5.6 A, T j=150 °C - 0.80 - f =1 MHz, open drain - 2.2 - Gate resistance Rev. 2.1 RG page 2 Ω 2009-07-23 IPA50R350CP Parameter Values Symbol Conditions Unit min. typ. max. - 1020 - - 46 - - 43 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 92 - Turn-on delay time t d(on) - 35 - Rise time tr - 14 - Turn-off delay time t d(off) - 80 - Fall time tf - 12.0 - Gate to source charge Q gs - 4 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 5.2 - V - 0.9 1.2 V - 250 - ns - 2.3 - µC - 19 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 400 V V DD=400 V, V GS=10 V, I D=5.6 A, R G=30.9 Ω ns Gate Charge Characteristics V DD=400 V, I D=5.6 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=5.6 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 0) J-STD20 and JESD22 1) Limited only by Tj,max 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) I SD≤I D, di /dt ≤400A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2009-07-23 IPA50R350CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 40 102 1 µs limited by on-state resistance 30 10 µs 101 1 ms I D [A] P tot [W] 100 µs 20 10 ms 10 10 0 DC 10-1 0 0 25 50 75 100 125 150 175 10-2 100 T C [°C] 101 102 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z(thJC)=f(tp); I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 103 30 20 V 10 V 25 0.5 8V 0.2 100 7V 20 I D [A] Z thJC [K/W] 0.1 0.05 6V 15 0.02 10-1 0.01 10 5.5 V single pulse 5V 5 4.5 V 0 10-2 10 Rev. 2.1 -5 10 -4 10 -3 10 -2 10 t p [s] -1 10 0 0 5 10 15 20 V DS [V] page 4 2009-07-23 IPA50R350CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 20 3 20 V 10 V 15 2.5 8V 7V 7V 10 V 6.5 V 5.5 V R DS(on) [Ω] I D [A] 6V 5.5 V 10 6V 2 5V 5 1.5 4.5 V 0 1 0 5 10 15 20 25 0 5 10 V DS [V] 15 20 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=5.6 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.9 35 25 °C 0.8 30 0.7 25 20 0.5 98 % 0.4 150 °C I D [A] R DS(on) [Ω] 0.6 15 typ 0.3 10 0.2 5 0.1 0 0 -60 -30 0 30 60 90 120 150 180 T j [°C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 2009-07-23 IPA50R350CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=5.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 25 °C, 98% 8 100 V 150 °C, 98% 400 V 101 150 °C 25 °C I F [A] V GS [V] 6 4 100 2 10-1 0 0 5 10 15 0 20 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=3.7 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 580 250 560 200 540 E AS [mJ] V BR(DSS) [V] 150 100 520 500 480 50 460 440 0 25 75 125 175 Rev. 2.1 -60 -20 20 60 100 140 180 T j [°C] T j [°C] page 6 2009-07-23 IPA50R350CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 5 104 4 Ciss 103 102 E oss [µJ] C [pF] 3 Coss 2 101 1 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.1 0 100 200 300 400 500 V DS [V] page 7 2009-07-23 IPA50R350CP Definition of diode switching characteristics Rev. 2.1 page 8 2009-07-23 IPA50R350CP PG-TO220-3-31;-3-111: Outline / Fully isolated package (2500VAC; 1minute) Rev. 2.1 page 9 2009-07-23 IPA50R350CP Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2009-07-23