BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFQ 81 SOT-23 RAs Q62702-F1049 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 16 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 30 Base current IB 4 Total power dissipation Ptot TS ≤ 59 °C Values Unit V mA mW 280 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFQ 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 16 100 nA - - 100 IEBO µA - - 10 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 25 V, VBE = 0 Collector-base cutoff current V 50 2 120 200 Dec-12-1996 BFQ 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 4.5 pF - 0.39 0.6 - 0.19 - - 0.9 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5.8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.45 - f = 1.8 GHz - 2.2 - f = 900 MHz - 16 - f = 1.8 GHz - 10.5 - f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFQ 81 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 fA BF = 110 - NF = 0.80846 - VAF = 35 V IKF = 0.22241 A ISE = 5.8728 fA NE = 1.0668 - BR = 25.974 - NR = 0.36321 - VAR = 2.3785 V IKR = 0.011566 A ISC = 169.77 fA NC = 1.2237 - RB = 5.7058 Ω IRB = 0.11894 mA RBM = 1.5489 Ω RE = 1.1731 Ω RC = 0.3715 Ω CJE = 33.977 fF VJE = 0.4318 V MJE = 1.7707 - TF = 21.842 ps XTF = 0.26781 - VTF = 0.48042 V ITF = 14.701 mA PTF = 0 deg CJC = 693.81 fF VJC = 0.26339 V MJC = 0.24448 - XCJC = 0.1254 - TR = 1.2554 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.74346 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFQ 81 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW 260 Ptot 240 TS 220 200 180 TA 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFQ 81 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.9 7 pF Ccb GHz fT 0.7 5V 5 2V 0.6 0.5 4 0.4 3 1V 0.3 2 0.2 0.7V 1 0.1 0.0 0 0 4 8 12 16 V VR 22 0 5 10 15 20 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 18 mA IC 35 12 dB G 25 10V 10V dB 5V 3V 14 5V G 2V 3V 8 2V 12 6 10 1V 8 4 1V 6 2 4 0.7V 0.7V 0 2 0 0 5 10 Semiconductor Group 15 20 25 mA IC -2 0 35 6 5 10 15 20 25 mA IC 35 Dec-12-1996 BFQ 81 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 18 28 IC=15mA G 8V dBm 0.9GHz dB IP3 14 0.9GHz 24 5V 22 3V 12 20 1.8GHz 10 2V 18 8 16 1.8GHz 14 6 1V 12 4 10 2 8 0 6 0 2 4 6 8 V 12 0 4 8 12 16 20 24 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 28 mA 34 IC 28 IC=15mA dB dB IC=15mA 24 G G 25 22 20 18 20 16 14 15 12 10 10 8 5 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 10V 6 2V 1V 0.7V 4 GHz f 2 0 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 10V 2V 1V 0.7V GHz 3.5 f Dec-12-1996