PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 150W per channel into 4Ω load in half-bridge configuration amplifier Lead-free package Key Parameters g VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 100 58 12 6.9 3.4 150 V m: nC nC Ω °C TO-220 Full-Pak 5 PIN Description G1, G2 D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g Max. Units VDS Drain-to-Source Voltage Parameter 100 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ±20 6.8 PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f PD @TC = 100°C Power Dissipation f 7.0 EAS Linear Derating Factor Single Pulse Avalanche Energyd 0.14 41 W/°C mJ TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range ID @ TC = 25°C ID @ TC = 100°C IDM 11 44 18 Soldering Temperature, for 10 seconds W 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw A 10lbxin (1.1Nxm) Thermal Resistance g Parameter RθJC Junction-to-Case f Typ. ––– Max. 7.1 RθJA Junction-to-Ambient (free air) ––– 65 www.irf.com Units °C/W 1 08/21/06 IRFI4212H-117P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter 100 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 58 72.5 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 6.6A e VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V gfs Forward Transconductance 11 ––– ––– Qg Total Gate Charge ––– 12 18 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.71 ––– Qgd Gate-to-Drain Charge ––– 6.2 ––– ID = 6.6A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 3.5 ––– See Fig. 6 and 15 Qsw ––– 6.9 ––– RG(int) Internal Gate Resistance ––– 3.4 ––– td(on) Turn-On Delay Time ––– 4.7 ––– VDD = 50V, VGS = 10Ve tr Rise Time ––– 8.3 ––– ID = 6.6A td(off) Turn-Off Delay Time ––– 9.5 ––– tf Fall Time ––– 4.3 ––– Ciss Input Capacitance ––– 490 ––– Coss Output Capacitance ––– 64 ––– Crss Reverse Transfer Capacitance ––– 34 ––– ƒ = 1.0MHz, Coss eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 80V LD Internal Drain Inductance ––– 4.5 ––– S VDS = 80V nC Internal Source Inductance ––– 7.5 VGS = 10V Ω ns RG = 2.5Ω VGS = 0V pF VDS = 50V See Fig.5 Between lead, nH LS VDS = 50V, ID = 6.6A ––– D 6mm (0.25in.) from package G and center of die contact S Diode Characteristics g Parameter IS @ TC = 25°C Continuous Source Current Min. Typ. Max. Units ––– ––– 11 Conditions MOSFET symbol ISM (Body Diode) Pulsed Source Current ––– ––– 44 A VSD (Body Diode)c Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 36 54 ns Qrr Reverse Recovery Charge ––– 56 84 nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 6.6A, VGS = 0V e TJ = 25°C, IF = 6.6A di/dt = 100A/µs e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.9mH, RG = 25Ω, IAS = 6.6A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. Specifications refer to single MosFET. 2 www.irf.com IRFI4212H-117P 100 100 BOTTOM VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 10 6.0V BOTTOM 6.0V 10 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 100 10 T J = 150°C T J = 25°C 1 VDS = 50V ≤60µs PULSE WIDTH ID = 6.6A VGS = 10V 2.0 (Normalized) R DS(on) , Drain-to-Source On Resistance 2.5 1.5 1.0 0.1 0.5 3 4 5 6 7 8 9 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 6.6A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 Crss 10 VDS= 80V VDS= 50V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 12 14 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFI4212H-117P 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 100µsec 1 0.1 1msec VGS = 0V 0.1 DC 0.001 0.0 0.5 1.0 1.5 1 10 VSD, Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 12 VGS(th) , Gate Threshold Voltage (V) 4.5 10 ID, Drain Current (A) 10msec Tc = 25°C Tj = 150°C Single Pulse 0.01 8 6 4 2 0 4.0 3.5 ID = 250µA 3.0 2.5 2.0 1.5 25 50 75 100 125 150 -75 -50 -25 T J , Junction Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Junction Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.001 1E-006 0.02 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 R4 R4 τC τ τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri Ri (°C/W) τi (sec) 0.7942 0.000208 1.3536 0.001434 2.2345 0.100647 2.7177 1.9398 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 200 175 ID = 6.6A 175 150 T J = 125°C 125 100 T J = 25°C 75 50 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFI4212H-117P ID TOP 1.2A 2.1A BOTTOM 6.6A 150 125 100 75 50 25 0 4 5 6 7 8 9 10 11 12 13 14 15 16 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V A 0.01Ω tp I AS Fig 13b. Unclamped Inductive Test Circuit LD Fig 13c. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) Fig 14a. Switching Time Test Circuit tr td(off) tf Fig 14b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit www.irf.com Qgd Qgodr Fig 15b Gate Charge Waveform 5 IRFI4212H-117P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information 14 TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06 6 www.irf.com