IRF PVA3054

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PD 1.030D
Series PVA30
Microelectronic
Power IC Relay
Single-Pole, 40mA, 0-300V AC/DC
BOSFET Photovoltaic Relay
®
General Description
PVA30 Features
The Photovoltaic AC Relay (PVA) is a single-pole, normally open solid state replacement for electro-mechanical
relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional
(AC or DC) MOSFET power IC termed a BOSFET. The
BOSFET is controlled by a photovoltaic generator of novel
construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVA30 series combines very low solid state output
capacitance, very high off-state resistance and very fast
response. These Photovoltaic Relays are designed specifically to accurately switch low-level signals in high-performance instrumentation systems.
The PVA overcomes the limitations of both conventional
and reed electromechanical relays by offering the solid
state advantages of long life, high operating speed, low
pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product
improvement and design innovations in many applications
such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition.
The PVA30 series can switch analog signals from thermocouple level to 300 volts peak AC or DC polarity. Signal
frequencies into the RF range are easily controlled and
switching rates up to 25kHz are achievable.
The extremely small thermally generated offset voltages
allow increased measurement accuracies. The critical output semiconductors are completely shielded from the infra-red radiation of the input LED. Therefore, photocurrents
in the output BOSFET are nonexistent and there is not an
output offset resulting from radiation from the input LED
drive.
Unique silicon technology developed by International Rectifier forms the heart of the PVA. The monolithic BOSFET
contains a bidirectional N-channel power MOSFET output
structure. In addition, this power IC chip has input circuitry
for fast turn-off and gate protection functions. This section
of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVA microelectronic
power IC relay.
This advanced semiconductor technology has created a
radically new control device. Designers can now develop
switching systems to new standards of electrical performance and mechanical compactness.
BOSFET Power IC
10 10 Operations
25µsec Operating Time
Low Output Capacitance
0.2µVolt Thermal Offset
Offset Independent of Input Drive
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
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Part Identification
Part Number
Operating
Sensitivity
Voltage (AC/DC)
PVA3054
0 – 300V
PVA3055
To Order
Off-State
Resistance
1010 Ohms
5 mA
1011 Ohms
(BOSFET is a trademark of International Rectifier)
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Series PVA30 — BOSFET® Photovoltaic Relay
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVA3054
Minimum Control Current (see figure 1)
For 40mA Continuous Load Current
For 22mA Continuous Load Current
Control Current Range (Caution: current limit input LED. See figure 6)
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Maximum Reverse Voltage
PVA3054
Operating Voltage Range
Units
DC
mA@40°C
mA@60°C
5.0
5.0
Maximum Control Current for Off-State Resistance at 25°C
OUTPUT CHARACTERISTICS
PVA3055
PVA3055
Units
0 to ± 300
V(PEAK)
40
mA(DC)
Maximum T(on) @ 12mA Control, 20 mA Load, 100 VDC
25
µs
Maximum T(off) @ 12mA Control, 20 mA Load, 100 VDC
15
µs
Maxiumum Load Current 40°C (see figure 1)
Response Time @25°C (see figures 7 and 8)
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 10 mA Load, 5mA Control
Maximum Off-state Leakage 25°C @ 5.0 VDC (see figure 5)
Maximum Thermal Offset Voltage @ 5.0mA Control VO(OS)
Minimum Off-State dv/dt
Maximum Output Capacitance (see figure 9)
Ω
160
1010
Minimum Off-state Resistance 25°C @ 240 VDC
1011
—
0.05
0.2
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Operating
Storage
To Order
nA
µvolts
1000
V/µs
3.0
pF @ 40VDC
GENERAL CHARACTERISTICS (PVA3054 and PVA3055)
Dielectric Strength: Input-Output
Ω
Units
2500
VRMS
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
-40 to +85
-40 to +100
°C
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Offset Voltage (µVolts)
Max. Load Current (mA)
Series PVA30 — BOSFET® Photovoltaic Relay
Input control Current IF (mA)
Ambient Temperature (°C)
Figure 2. Offset Voltage
RDD(on) (Ohms)
Figure 1. Current Derating Curves
Ambient Temperature (°C)
Figure 3.Typical On Characteristics
Figure 4. Typical On-Resistance
To Order
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Nano-Amperes
Input Current (mA)
Series PVA30 — BOSFET® Photovoltaic Relay
LED Forward Voltage Drop (Volts DC)
Off-State Voltage (V DD) Volts
Figure 6. Input Characteristics
(Current Controlled)
I LED (mA)
Figure 5. Typical Variation of Off-State
Leakage Current
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
To Order
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Typical Capacitance (picofarads)
Series PVA30 — BOSFET® Photovoltaic Relay
VDD Drain to Drain Voltage
Figure 9. Typical Output Capacitance
Wiring Diagram
To Order
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Series PVA30 — BOSFET® Photovoltaic Relay
Case Outline
(Dimensions in millimeters (inches))
Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215
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http://www/irf.com/
Data and specifications subject to change without notice. 9/96
To Order