PD - 9.1697
IRL3402
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
D
VDSS = 20V
RDS(on) = 0.01Ω
G
Description
ID = 85A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, V GS @ 5.0V
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
85
54
340
110
0.91
± 10
14
Units
A
W
W/°C
V
V
290
51
11
5.0
-55 to + 150
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.1
–––
62
°C/W
10/31/97
IRL3402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
20
–––
–––
–––
0.70
65
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
IGSS
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
140
80
120
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.010
VGS = 4.5V, ID = 51A
Ω
0.008
VGS = 7.0V, ID = 51A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, I D = 51A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 16V, VGS = 0V, T J = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
78
ID = 51A
18
nC VDS = 10V
30
VGS = 4.5V, See Fig. 6
–––
VDD = 10V
–––
ID = 51A
ns
–––
RG = 5.0Ω, VGS = 4.5V
–––
RD = 0.19Ω,
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3300 –––
VGS = 0V
1400 –––
pF
VDS = 15V
510 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 85
showing the
A
G
integral reverse
––– ––– 340
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 51A, VGS = 0V
––– 72 110
ns
TJ = 25°C, IF = 51A
––– 160 240
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 51A.
Calculated continuous current based on maximum allowable
ISD ≤ 51A, di/dt ≤ 82A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3402
1000
1000
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
2.25V
2.25V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
V DS, Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 50V
20µs PULSE WIDTH
2
3
4
5
V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TJ = 150 °C
6
I D = 85A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
10V
0
20
40
60
80 100 120 140 160
T J, Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3402
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
Coss
2000
1000
Crss
15
VGS, Gate-to-Source Voltage (V)
6000
0
1
10
ID = 85 A
VDS = 16V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
40
60
80
100
120
Q G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
100
1000
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
TJ = 25 ° C
10
1
10us
100us
100
1ms
10ms
10
0.1
0.2
VGS = 0 V
0.6
1.0
1.4
1.8
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
TC = 25 °C
TJ = 150 °C
Single Pulse
1
2.2
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3402
100
600
EAS , Single Pulse Avalanche Energy (mJ)
LIMITED BY PACKAGE
I D , Drain Current (A)
80
60
40
20
0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
TOP
500
BOTTOM
ID
23A
32A
51A
400
300
200
100
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response
(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.020
0.012
0.015
VGS = 4.5V
0.010
VGS = 7.0V
0.005
0
50
100
150
200
250
300
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
350
(Ω)
R DS (on), Drain-to-Source On Resistance
R DS (on), Drain-to-Source On Resistance ( Ω )
IRL3402
0.011
0.010
0.009
ID = 85A
0.008
0.007
0.006
2
3
4
5
6
7
VGS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
8
IRL3402
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
M
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E X PLE
AM PL: ET:HITSH IS A
I SN AIRF
N IR
F1 010
E X AM
1010
S E LY
MB LY
W ITWHITAHS SAESMB
CO D9B
E 1M
9 B1M
LO TL OT
CO DE
A
I NT
E RN
A TIO
IN TE
R NA
T ION
A LN AL
C IER
TIF IE R
R ECRTEIF
10 10
IR F IRF
1010
LOG O
LO GO
9246
9246
9B 9B1M 1 M
SS BE LY
MB LY
A S SAEM
C OD E
LO TLOTCO DE
A
P ARNU
T M
NU
P A RT
BEMRBE R
D A TE
D A TE
C ODCEOD E
(Y YW
(Y YW
W ) W)
= AYE
Y Y Y=Y YE
R AR
W
W
=
W W = W EW
EKEE K
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http://www.irf.com/
Data and specifications subject to change without notice.
10/97