IRF IRFS9N60APBF

SMPS MOSFET
PD - 95538
IRFS9N60APbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
RDS(on) max
ID
0.75Ω
9.2A
600V
G DS
D2Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.2
5.8
37
170
1.3
± 30
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
l
l
Active Clamped Forward
Main Switch
Notes  through … are on page 9
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1
7/21/04
IRFS9N60APbF
Static @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V(BR)DSS
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Conditions
600 ––– –––
V
VGS = 0V, ID = 250µA
––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA†
––– ––– 0.75
Ω
VGS = 10V, ID = 5.5.A „
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
––– ––– 25
VDS = 600V, VGS = 0V
µA
––– ––– 250
VDS = 480V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 30V
nA
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
5.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
13
25
30
22
1400
180
7.1
1957
49
96
Max. Units
Conditions
–––
S
VDS = 25V, ID = 3.1A
49
ID = 9.2A
13
nC
VDS = 400V
20
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 300V
–––
ID = 9.2A
ns
–––
R G = 9.1Ω
–––
R D = 35.5Ω,See Fig. 10 „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
290
9.2
17
mJ
A
mJ
Typ.
Max.
Units
–––
–––
0.75
40
°C/W
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 9.2
showing the
A
G
integral reverse
––– –––
37
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 530 800
ns
TJ = 25°C, IF = 9.2A
––– 3.0 4.4
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFS9N60APbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
10
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
4.7V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
4.7V
20µs PULSE WIDTH
TJ = 150 ° C
1
100
1
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
1
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10.0
ID = 9.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFS9N60APbF
2400
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
1600
Coss
1200
800
Crss
400
0
1
10
100
1000
ID = 9.2A
400V
VDS = 480V
VDS = 300V
VDS = 120V
16
12
8
4
0
A
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
40
50
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.5
0.7
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.2
10us
10
100us
1ms
1
0.1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFS9N60APbF
10.0
VGS
8.0
ID , Drain Current (A)
RD
V DS
D.U.T.
RG
6.0
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
V
- DD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFS9N60APbF
600
TOP
500
BOTTOM
ID
4.1A
5.8A
9.2A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFS9N60APbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFS9N60APbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L O T CO D E 8 0 2 4
AS S E M B L E D O N W W 0 2 , 2 0 0 0
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E CT IF IE R
L O GO
N ote: "P " in as s em bly lin e
po s i tion in dicates "L ead-F r ee"
P AR T N U M B E R
F 53 0 S
AS S E M B L Y
L O T CO D E
D AT E CO D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
8
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
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IRFS9N60APbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 6.8mH
… Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 9.2A. (See Figure 12)
as Coss while VDS is rising from 0 to 80% VDSS
ƒ ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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