IRF IRF520VS

PD - 94306
IRF520VS
IRF520VL
HEXFET® Power MOSFET
l
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
D
VDSS = 100V
RDS(on) = 0.165Ω
G
ID = 9.6A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
D2Pak
IRF520VS
TO-262
IRF520VL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V ‡
Continuous Drain Current, VGS @ 10V ‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
9.6
6.8
37
44
0.29
± 20
9.2
4.4
7.0
-55 to + 175
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady state)**
Typ.
Max.
Units
–––
–––
3.4
40
°C/W
1
01/18/02
IRF520VS/IRF520VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
1.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.9
23
30
24
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚‡
––– 560
–––
81
–––
10
––– 150…
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA ‡
0.165
Ω
VGS = 10V, ID = 5.5A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 5.5A„‡
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
22
ID = 9.2A
5.2
nC
VDS = 80V
7.0
VGS = 10V, See Fig. 6 and 13‡
–––
VDD = 50V
–––
ID = 9.2A
ns
–––
RG = 18Ω
–––
VGS = 10V, See Fig. 10 „‡
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5 ‡
44†
mJ IAS = 9.2A, L = 1.0mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 9.6
showing the
A
G
integral reverse
37
––– –––
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 83 120
ns
TJ = 25°C, I F = 9.2A
––– 220 330
nC
di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 9.2A, VGS=10V (See Figure 12)
ƒ ISD ≤ 9.2A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF520V data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994
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IRF520VS/IRF520VL
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
4.5V
20µs PULSE WIDTH
T = 25 C
°
J
1
0.1
1
10
10
4.5V
20µs PULSE WIDTH
T = 175 C
J
1
1
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
10
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
Fig 3. Typical Transfer Characteristics
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9.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.5
5.0
100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
4.0
°
ID = 9.2A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF520VS/IRF520VL
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
800
Coss = Cds + Cgd
600
Ciss
400
200
Coss
VGS , Gate-to-Source Voltage (V)
20
1000
ID = 9.2A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
4
16
20
24
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
TJ = 175 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
1
TJ = 25 ° C
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.4
8
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.6
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF520VS/IRF520VL
10.0
VDS
VGS
I D , Drain Current (A)
8.0
RD
D.U.T.
RG
+
-VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF520VS/IRF520VL
L
VD S
D .U .T
RG
IA S
2V0GS
V
tp
D R IV E R
+
- VD D
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
EAS , Single Pulse Avalanche Energy (mJ)
80
1 5V
ID
3.8A
6.5A
9.2A
TOP
BOTTOM
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF520VS/IRF520VL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF520VS/IRF520VL
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
8.89 (.3 50 )
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
8
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
www.irf.com
IRF520VS/IRF520VL
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE:
THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
www.irf.com
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
9
IRF520VS/IRF520VL
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.1 0 (.16 1 )
3.9 0 (.15 3 )
F EE D D IRE C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.60 (.45 7)
1 1.40 (.44 9)
0 .3 68 (.0 14 5)
0 .3 42 (.0 13 5)
1 5.42 (.6 09)
1 5.22 (.6 01)
24.30 (.95 7)
23.90 (.94 1)
TR L
10.90 (.42 9)
10.70 (.42 1)
1 .7 5 (.069 )
1 .2 5 (.049 )
4.7 2 (.13 6)
4.5 2 (.17 8)
1 6.10 (.6 34 )
1 5.90 (.6 26 )
F E ED D IRE C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
NO TES :
1. CO MF OR MS TO EIA-418.
2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER .
3. DIM ENS ION M EASUR ED @ HU B.
4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E.
60.00 (2.362)
M IN.
30.40 (1.197)
MA X.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
10
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