PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
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Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.012Ω
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
49
35
290
58
0.38
± 20
360
43
5.8
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.6
65
°C/W
8/25/97
IRFI1010N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
66
40
46
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
2900
880
330
12
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.012
Ω
VGS = 10V, ID = 26A
4.0
V
VDS = VGS, I D = 250µA
–––
S
VDS = 25V, ID = 43A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
130
ID = 43A
23
nC VDS = 44V
53
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
I D = 43A
ns
–––
RG = 3.6Ω
–––
RD = 0.62Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
V
DS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
49
–––
–––
290
–––
–––
–––
–––
81
240
1.3
120
370
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 26A, VGS = 0V
TJ = 25°C, IF = 43A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 43A. (See Figure 12)
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF1010N data and test conditions
D
S
IRFI1010N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
100
4.5 V
2 0µ s PU LSE W ID TH
TC = 2 5°C
10
0.1
1
10
A
100
4 .5V
10
100
0.1
V D S , D rain-to-S ource V oltage (V )
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
(N o rm a liz e d )
I D , D r ain- to-S ourc e C urre nt (A )
3.0
TJ = 2 5 ° C
TJ = 1 7 5 ° C
10
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
4
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
1
1
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
100
20 µs P UL SE W IDTH
TC = 17 5°C
10
A
I D = 72 A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI1010N
4000
V GS
C is s
C rs s
C is s C o ss
3000
C os s
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G a te -to -S o u rc e V o lta g e (V )
C , C a p a c ita n c e (p F )
5000
I D = 4 3A
V DS = 4 4V
V DS = 2 8V
16
12
2000
C rs s
1000
0
10
4
FO R TES T C IR CU IT
SEE FIG U R E 13
0
A
1
8
100
0
V D S , Drain-to-Source V oltage (V)
40
60
80
100
120
A
140
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100
I D , D ra in C u rre n t (A )
I S D , R e ve rs e D ra in C u rre n t (A )
20
TJ = 17 5°C
T J = 25°C
10µ s
100
100µ s
1m s
10
10m s
V G S = 0V
10
0.4
0.8
1.2
1.6
2.0
2.4
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFI1010N
VGS
D.U.T.
RG
40
I D , Drain Current (A)
RD
VDS
50
+
- VDD
10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
90%
10
0
25
50
75
100
125
T C , Case Temperature
150
175
10%
VGS
( ° C)
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PDM
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRFI1010N
15 V
L
VDS
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
A
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
1000
TO P
BO TTOM
800
ID
1 8A
31A
43 A
600
400
200
0
V D D = 2 5V
25
50
A
75
100
125
150
175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
QG
.3µF
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRFI1010N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI1010N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
ø
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
-A3.7 0 (.145)
3.2 0 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2.80 (.110)
2.60 (.102)
L EA D AS SIGN M EN T S
1 - GA T E
2 - D R AIN
3 - SO U R C E
7.10 (.280 )
6.70 (.263 )
1.15 (.045)
M IN .
NO T ES :
1 D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2 C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-B -
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.90 (.035 )
3X 0.70 (.028 )
0.25 (.010)
2 .5 4 (.100)
2X
3X
M
A M
B
0.48 (.019 )
0.44 (.017 )
2.85 (.1 12)
2.65 (.1 04)
D
B
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E X AM
PL E PLE
: TH
I S AISN AIR
010
E XAM
: IST HIS
N F1IRF
I840G
W ITW
H ITH
A S SAS
E MB
SELY
MBLY
E401
L OTLOT
CO DCODE
E 9 B1M
A
I NT E RN A TIO N AL
INT ER NAT IONA L
R E C TIF IE R
IRF
10
RE CTIF IER
IRF10
I840G
LOG O
9246
LOGO
9BE 401 19 M
24 5
A SS
MB
LY
ASESE
MBLY
LOT
EE
LOT C OD
COD
P AR T NU M BE R
A
PA RT NU MBE R
D A TE C OD E
(YDYW
ATEW )CODE
W )A R
Y(YYW
Y = YE
ARK
WYY
W == YE
W EE
W W = W E EK
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97