BSO201SP H OptiMOS® P-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1) for target applications • 150°C operating temperature R DS(on),max -20 V V GS=4.5 V 8.0 mΩ V GS=2.5 V 12.9 ID -14.9 A • Super Logic Level (2.5V rated) • Pb-free plating; RoHS compliant PG-DSO-8 • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free BSO201SP H PG-DSO-8 201SP Yes Packing Halogen free dry Yes Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Value Symbol Conditions ID Unit 10 secs steady state V GS=4.5 V, T A=25 °C 14.9 12.0 V GS=4.5 V, T A=70 °C 11.9 9.4 V GS=2.5 V, T A=25 °C 11.8 9.3 V GS=2.5 V, T A=70 °C 9.4 7.4 A Pulsed drain current2) I D,pulse T A=25 °C 59.6 Avalanche energy, single pulse E AS I D=-14.9 A, R GS=25 Ω 248 mJ Gate source voltage V GS ±12 V Power dissipation1) P tot Operating and storage temperature T j, T stg ESD class T A=25 °C 1.6 -55 ... 150 JESD22-A114 HBM W °C 1C (< 2 kV) 260 Soldering temperature °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.1.32 2.5 page 1 2009-12-21 BSO201SP H Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 50 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 0.25 mA -20 - - Gate threshold voltage V GS(th) V DS=V GS, I D= -250 µA -0.6 -0.9 -1.2 Zero gate voltage drain current I DSS V DS=-20 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=-20 V, V GS=0 V, T j=150 °C - 10 100 V µA Gate-source leakage current I GSS V GS= -12 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=-11.8 A - 10.3 12.9 mΩ V GS=4.5 V, I D=-14.9 A - 6.7 8.0 - 3.8 - Ω 40 71 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-11.8 A 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.32 page 2 2009-12-21 BSO201SP H Parameter Values Symbol Conditions Unit min. typ. max. - 6400 9600 - 2100 3150 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 1700 2550 Turn-on delay time t d(on) - 21 32 Rise time tr - 99 149 Turn-off delay time t d(off) - 99 149 Fall time tf - 162 243 Gate to source charge Q gs - -10 -15 Gate charge at threshold Q g(th) - -6 -16 Gate to drain charge Q gd - -23 -39 Switching charge Q sw - -26 -38 Gate charge total Qg - -66 -88 Gate plateau voltage V plateau - -1.5 - Output charge Q oss - 38 51 - - -3.7 - - -59.6 V DD=-10 V, V GS=4.5 V, I D=14.9 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=-10 V, I D=14.9 A, V GS=0 to 4.5 V V DD=-10 V, V GS=0 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-14.9 A, T j=25 °C - - 1.2 V Reverse recovery time t rr V R=10 V, I F=I S, di F/dt =100 A/µs - - 95 ns Reverse recovery charge Q rr V R=10 V, I F=I S, di F/dt =100 A/µs - - 109 nC 4) Rev.1.32 T A=25 °C A See figure 16 for gate charge parameter definition page 3 2009-12-21 BSO201SP H 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); t p≤10 s parameter: V GS = 4.5 V 16 3 14 2.5 12 2 - I D [A] P tot [W] 10 1.5 8 6 1 4 0.5 2 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C2); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 102 102 100 µs 0.5 1 ms 101 101 0.1 Z thJA [K/W] I D [A] 10 ms limited by on-state resistance 100 ms 100 0.2 0.05 100 0.02 0.01 10 s single pulse 10-1 10-2 10-1 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] V DS [V] Rev.1.32 10-6 page 4 2009-12-21 BSO201SP H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 90 4.5 V 3.0V 2.0 V 15 14 2.5 V 80 13 12 2.0V 70 2.2 V 11 10 50 1.8 V 40 2.5 V 9 R DS(on) [mΩ] - I D [A] 60 3.0 V 8 4.5 V 7 10 V 6 30 5 4 20 1.5 V 3 2 10 1 0 0 0 1 2 3 4 0 10 20 - V DS [V] 30 40 50 60 - I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 35 120 30 100 25 20 g fs [S] - I D [A] 80 15 40 150 °C 10 25°C 20 5 0 0.0 0.5 1.0 1.5 2.0 2.5 - V GS [V] Rev.1.32 60 0 0 5 10 15 20 25 30 35 40 I D [A] page 5 2009-12-21 BSO201SP H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D= -14.9 A; V GS= -4.5 V V GS(th)=f(T j); V GS=V DS; I D= -250 µA 12 1.6 11 1.4 1.2 1 9 V GS(th) [V] R DS(on) [mΩ] 10 98 % 8 0.8 0.6 7 typ 0.4 6 0.2 5 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 102 25 °C 150 °C 150 °C, 98% Ciss 25 °C, 98% I F [A] C [pF] 101 Coss 100 Crss 103 10-1 0 5 10 15 20 - V DS [V] Rev.1.32 0 0.5 1 1.5 2 V SD [V] page 6 2009-12-21 BSO201SP H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-14.9 A pulsed parameter: T j(start) parameter: V DD 100 10 9 8 7 25 °C 10 4V 10 V 100 °C 16 V 6 - V GS [V] - I AV [A] 125 °C 5 4 1 3 2 1 0.1 1 10 100 0 1000 0 20 t AV [µs] 40 60 80 100 120 140 - Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=0.25 mA 23 V GS 22.5 Qg 22 - V BR(DSS) [V] 21.5 21 20.5 V g s(th) 20 19.5 19 Q g(th) Q sw 18.5 Q gs 18 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev.1.32 page 7 2009-12-21 BSO201SP H Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.32 page 8 2009-12-21 BSO201SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.32 page 9 2009-12-21