BFG 19S NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 19S BFG19S Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 12 Total power dissipation, TS 75 °C 1) Ptot Junction temperature Value Unit V mA 1 W Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS 75 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 40 100 220 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V 2 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 4 5.5 - Ccb - 0.85 1.4 Cce - 0.4 - Ceb - 4.6 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2.5 - f = 1.8 GHz - 4 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8 - - 11 - - 5 - - 35 - Power gain, maximum available F) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IP3 IC = 70 mA, VCE = 8 V, ZS = ZL= 50 , f = 900 MHz 1G ma dBm = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999 BFG 19S Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 1200 mW 1000 TS P tot 900 800 700 600 500 400 TA 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-26-1999 BFG 19S Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 6.0 2.6 pF GHz 5V 2.2 2.0 2V 4.5 fT 1.8 C cb 3V 5.0 1.6 1.4 4.0 3.5 1.2 1.0 3.0 0.8 2.5 0.6 1V 2.0 0.4 0.0 0 0.7V 1.5 0.2 4 8 12 16 V 1.0 0 22 20 40 60 80 mA VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 10 10V 5V dB 120 10V dB 3V 5V 2V 3V 6 2V G G 10 8 4 1V 1V 6 2 4 0 0.7V 0.7V 2 0 20 40 60 80 mA -2 0 120 IC 20 40 60 80 mA 120 IC 5 Oct-26-1999 BFG 19S Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 14 40 0.9GHz IC=70mA dB 8V dBm 0.9GHz 5V IP 3 10 G 1.8GHz 30 3V 8 25 6 1.8GHz 2V 20 4 1V 15 2 0 0 2 4 6 V 8 10 0 12 20 40 60 mA 80 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 36 120 32 IC=70mA dB dB IC =70mA 24 28 20 G S21 24 16 20 12 16 8 12 4 10V 8 0 10V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 2V 1V 0.7V GHz 3.5 2V 1V -4 -8 0.0 f 0.7V 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Oct-26-1999