PNP Silicon Darlington Transistors BC 876 … BC 880 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 875, BC 877, BC 879 (NPN) ● Type Marking Ordering Code BC 876 BC 878 BC 880 – C62702-C943 C62702-C942 C62702-C941 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Symbol Values BC 876 BC 878 BC 880 Unit Collector-emitter voltage VCE0 45 60 80 Collector-base voltage VCB0 60 80 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W Junction temperature Tj 150 ˚C Storage temperature range Tstg V A mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA Junction - case3) Rth JC 1) 2) 3) ≤ ≤ 156 K/W 75 For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 876 … BC 880 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 50 mA BC 876 BC 878 BC 880 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA BC 876 BC 878 BC 880 V(BR)CB0 Emitter-base breakdown voltage, IE = 100 µA V 45 60 80 – – – – – – 60 80 100 – – – – – – V(BR)EB0 5 – – Collector cutoff current VCE = 0.5 × VCEmax ICE0 – – 500 Collector cutoff current VCB = VCBmax VCB = VCBmax, TA = 150 ˚C ICB0 – – – – 100 20 µA Emitter cutoff current, VEB = 4 V IEB0 – – 100 nA DC current gain IC = 150 mA; VCE = 10 V1) IC = 500 mA; VCE = 10 V1) hFE Collector-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA IC = 1000 mA, IB = 1 mA VCEsat Base-emitter saturation voltage1) IC = 1000 mA; IB = 1 mA nA – 1000 2000 – – – – – – – – 1.3 1.8 VBEsat – – 2.2 fT – 150 – V AC characteristics Transition frequency IC = 200 mA, VCE = 5 V, f = 20 MHz 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 MHz BC 876 … BC 880 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 100 V Permissible pulse load RthJA = f (tp) DC current gain hFE = f (TA) VCE = 10 V Semiconductor Group 3 BC 876 … BC 880 DC current gain hFE = f (IC) VCE = 10 V, TA = 25 ˚C Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Collector-emitter saturation voltage VCEsat = f (IC) Parameter = IB, TA = 25 ˚C Base-emitter saturation voltage VBEsat = f (IC) Parameter = IB, TA = 25 ˚C Semiconductor Group 4