INFINEON SPU09N05

SPD 09N05
SIPMOS Power Transistor
Features
Product Summary
• N channel
Drain source voltage
VDS
55
V
•
Drain-Source on-state resistance
RDS(on)
0.1
Ω
Continuous drain current
ID
9.2
A
Enhancement mode
• Avalanche rated
• dv/dt rated
• 175˚C operating temperature
Type
Package
Ordering Code
Packaging
SPD09N05
P-TO252
Q67040-S4136
Tape and Reel
SPU09N05
P-TO251
Q67040-S4130-A2 Tube
MaximumRatings , at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Pin 1
Pin 2
Pin 3
G
D
S
Value
A
ID
TC = 25 ˚C
9.2
TC = 100 ˚C
6.5
Pulsed drain current
Unit
IDpulse
37
EAS
35
Avalanche energy, periodic limited by Tjmax
EAR
2.4
Reverse diode dv/dt
dv/dt
6
IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs
Gate source voltage
VGS
V
Power dissipation
Ptot
±20
24
-55... +175
˚C
TC = 25 ˚C
Avalanche energy, single pulse
mJ
ID = 9.2 A, VDD = 25 V, RGS = 25 Ω
kV/µs
W
TC = 25 ˚C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Data Sheet
55/175/56
1
06.99
SPD 09N05
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
6.25
Thermal resistance, junction - ambient, leded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm 2 cooling area1)
-
-
50
K/W
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)DSS
55
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 10 µA
Zero gate voltage drain current
µA
IDSS
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
-
-
100
-
10
100
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
Ω
RDS(on)
VGS = 10 V, ID = 6.5 A
-
0.093
0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
06.99
SPD 09N05
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
g fs
3
4.5
-
S
Ciss
-
215
270
pF
Coss
-
75
95
Crss
-
45
60
td(on)
-
15
25
tr
-
20
30
td(off)
-
30
45
tf
-
25
40
Dynamic Characteristics
Transconductance
VDS≥2*ID*RDS(on)max , ID = 6.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Data Sheet
3
06.99
SPD 09N05
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Qgs
-
1.3
2
Qgd
-
3.5
5.25
Qg
-
7
11
V(plateau)
-
5.9
-
V
IS
-
-
9.2
A
I SM
-
-
37
VSD
-
1.05
1.8
V
t rr
-
50
75
ns
Q rr
-
0.085
0.13
µC
Dynamic Characteristics
Gate to source charge
nC
VDD = 40 V, ID = 9.2 A
Gate to drain charge
VDD = 40 V, ID = 9.2 A
Gate charge total
VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 9.2 A
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
Inverse diode direct current,pulsed
TC = 25 ˚C
Inverse diode forward voltage
VGS = 0 V, I F = 18.5 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=l S , diF/dt = 100 A/µs
Data Sheet
4
06.99
SPD 09N05
Power Dissipation
Drain current
Ptot = f (TC)
ID = f (TC )
parameter: VGS ≥ 10 V
SPD09N05
SPD09N05
26
11
W
A
22
9
20
8
16
7
ID
Ptot
18
14
6
12
5
10
4
8
3
6
2
4
1
2
0
0
20
40
60
80
0
0
100 120 140 160 ˚C 190
20
40
60
80
100 120 140 160 ˚C 190
TC
TC
Safe operating area
Transient thermal impedance
I D = f (V DS)
ZthJC = f (tp )
parameter : D = 0 , T C = 25 ˚C
parameter : D = tp /T
10 2
SPD09N05
10 1
K/W
tp = 2.5µs
A
SPD09N05
D
10 0
Z thJC
/I
10 µs
DS
(o
n)
ID
=
V
DS
10 1
R
100 µs
10 -1
D = 0.50
0.20
10
0
0.10
1 ms
10 -2
10 ms
0.05
single pulse
0.02
DC
0.01
10 -1 -1
10
10
0
10
1
V
10
10 -3 -7
10
2
VDS
Data Sheet
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
06.99
SPD 09N05
Typ. output characteristics
Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID)
parameter: tp = 80 µs
parameter: V GS
SPD09N05
24
SPD09N05
Ptot = 24W
0.32
A
c
VGS [V]
a
k j
l
18
i
ID
16
14
10
4.5
c
5.0
d
5.5
h e
6.0
f
6.5
g
7.0
h
7.5
g
12
f i
8
e
6
e
f
g
h
i
4.0
b
RDS(on)
20
d
Ω
0.24
0.20
0.16
8.0
j
9.0
k
10.0
l
20.0
j
0.12
d
k
l
0.08
4
c
2
0.04 VGS [V] =
b
c
5.0
a
0
0.0
1.0
2.0
3.0
V
4.0
5.5
0.00
0
VDS
d
5.5
e
f
6.0 6.5
2
4
g
7.0
6
8
h
i
7.5 8.0
10
j
9.0
12
k
l
10.0 20.0
16 A
14
19
ID
Typ. transfer characteristics I D= f (VGS)
Typ. forward transconductance
parameter: tp = 80 µs
VDS ≥ 2 x I D x RDS(on) max
gfs = f(ID ); Tj = 25˚C
parameter: gfs
30
6
A
S
4
ID
gfs
20
15
3
10
2
5
1
0
0
1
2
3
4
5
6
7
8
V
0
0
10
VGS
Data Sheet
2
4
6
8
10
12
14
16
A
20
ID
6
06.99
SPD 09N05
Gate threshold voltage
Drain-source on-resistance
VGS(th) = f (Tj)
RDS(on) = f (Tj)
parameter : VGS = V DS, ID = 10 µA
parameter : ID = 6.5 A, VGS = 10 V
SPD09N05
5.0
V
0.34
Ω
4.4
4.0
VGS(th)
RDS(on)
0.28
0.24
0.20
3.6
3.2
2.8
max
2.4
0.16
98%
typ
2.0
0.12
1.6
typ
1.2
0.08
0.8
0.04
0.00
-60
min
0.4
0.0
-60
-20
20
60
100
140
˚C
-20
20
60
100
140
200
V
200
Tj
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz
parameter: Tj , tp = 80 µs
10 3
10 2
SPD09N05
A
pF
10 1
C
IF
Ciss
10 2
Coss
10 0
Crss
Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
10 1
0
5
10
15
20
25
30
V
10 -1
0.0
40
Data Sheet
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
VDS
7
06.99
SPD 09N05
Avalanche Energy EAS = f (Tj)
Typ. gate charge
parameter: ID = 9.2 A, VDD = 25 V
RGS = 25 Ω
VGS = f (QGate )
parameter: ID puls = 9.2 A
SPD09N05
40
16
V
mJ
12
VGS
EAS
30
25
10
0,2 VDS max
20
8
15
6
10
4
5
2
0
20
40
60
80
100
120
140
˚C
0
0
180
Tj
2
4
0,8 VDS max
6
8
11
nC
Q Gate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPD09N05
66
V
V(BR)DSS
64
62
60
58
56
54
52
50
-60
-20
20
60
100
140
˚C
200
Tj
Data Sheet
8
06.99