BB 641 Silicon Variable Capacitance Diode ● ● ● For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance 1 2 Type Ordering Code (tape and reel) Pin Configuration Marking 1 2 Package BB 641 Q62702-B792 C SOD-323 A red G Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Reverse voltage (R ≥ 5 kΩ) VRM 35 V Forward current IF 20 mA Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Rth JA ≤ 450 K/W Thermal Resistance Junction-ambient Semiconductor Group 1 05 95 BB 641 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. – – – – 20 200 DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Capacitance ratio VR = 1 V, 28 V, f = 1 MHz CT1/CT28 Capacitance matching VR = 1 V … 28 V, f = 1 MHz ∆CT/CT Series resistance CT = 30 pF, f = 100 MHz rS Series inductance Ls nA pF 62 2.65 76 3.1 – 22 24 – % – – 2.5 Ω Package Outline SOD-323 Dimensions in mm Semiconductor Group 69 2.88 2 – 1.55 – – 1.8 – nH BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3