1-A DC Motor Driver for Servo Driver Applications TLE 4206 Overview Features • • • • • • • • • • Optimized for headlight beam control applications Current-peak-blanking (no electrolytic capacitor at VS) Delivers up to 0.8 A continuous Low saturation voltage; typ.1.2 V total @ 25 °C; 0.4 A Output protected against short circuit Overtemperature protection with hysteresis Over- and undervoltage lockout No crossover current Internal clamp diodes Enhanced power packages Type Ordering Code Package TLE 4206 Q67000-A9303 P-DIP-16-5 TLE 4206 G Q67006-A9299 P-DSO-14-4 P-DIP-16-5 P-DSO-14-4 Description The TLE 4206 is a fully protected H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. The standard enhanced power P-DSO-14 package meets the application requirements and saves PCB-board space and costs. A P-DIP-16 package is also available. The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and angle-amplification are programmable with external resitors. An internal window-comparator controls the input line. In the case of a fault condition, like short circuit to GND, short circuit to supply-voltage, and broken wire, the TLE 4206 stops the motor immediately (brake condition). The “programable current-peak-blanking” disables the servo-loop during the VS voltage drop caused by the stall current spike. So there is no need of an electrolytic blocking capacitor at the VS-terminal. Furthermore the built in features like over- and undervoltage-lockout, short-circuitprotection and over-temperature-protection will open a wide range of automotive- and industrial applications. Semiconductor Group 1 1998-02-01 TLE 4206 P-DSO-14-4 FB HYST GND GND GND OUT1 CPB 1 2 3 4 5 6 7 14 13 12 11 10 9 8 P-DIP-16-5 REF RANGE GND GND GND OUT2 VS AEP02261 FB 1 16 REF HYST 2 15 RANGE N.C. 3 14 N.C. GND 4 13 GND GND 5 12 GND GND 6 11 GND OUT1 7 10 OUT2 CPB 8 9 VS AEP02262 Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. P-DSO-14-4 Pin No. P-DIP-16-5 Symbol Function 1 1 FB Feedback Input 2 2 HYST Hysteresis I/O 3, 4, 5, 10, 11, 12 4, 5, 6, 11, 12, 13 GND Ground 6 7 OUT1 Power Output 1 7 8 CPB Current Peak Blanking Input 8 9 VS Power Supply Voltage 9 10 OUT2 Power Output 2 13 15 RANGE Range Input 14 16 REF Reference Input 3, 14 N.C. Not connected Semiconductor Group 2 1998-02-01 TLE 4206 TLE 4206G RANGE 13 RangeAMP VS 8 HalfBridge 6 REF FB 14 1 ServoAMP Protection and Logic HalfBridge 9 HYST OUT1 2 OUT2 HystAMP 7 CPB 3,4,5, 10,11,12 GND AEB02258 Figure 2 Block Diagram (Pin numbers are valid for TLE 4206 G in P-DSO-14-4) Semiconductor Group 3 1998-02-01 TLE 4206 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. – 0.3 45 V – –1 – V t < 0.5 s; IS > – 2 A – 0.3 20 V – – – A internally limited –1 1 A – –2 –6 2 6 mA mA t < 2 ms; t/T < 0.1 Tj Tstg – 40 150 °C – – 50 150 °C – Junction pin (P-DSO-14-4) Rthj-pin – 25 K/W measured to pin 5 Junction ambient (P-DSO-14-4) RthjA – 65 K/W – Junction pin (P-DSO-16-5) Rthj-pin – 15 K/W measured to pin 5 Junction ambient (P-DSO-16-5) RthjA – 60 K/W – Voltages Supply voltage Supply voltage Logic input voltages (FB, REF, RANGE, HYST, CPB) VS VS VI Currents Output current (OUT1, OUT2) IOUT Output current (Diode) Input current (FB, REF, RANGE, HYST) IOUT IIN Temperatures Junction temperature Storage temperature Thermal Resistances Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Semiconductor Group 4 1998-02-01 TLE 4206 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. 8 18 V After VS rising above VUV ON Supply voltage increasing VS – 0.3 V Outputs in tristate Supply voltage decreasing VS – 0.3 VUV ON VUV OFF V Outputs in tristate – 0.8 0.8 A – – 50 500 µA – – 40 150 °C – Supply voltage Output current Input current (FB, REF) Junction temperature Semiconductor Group VS IOUT1-2 IIN Tj 5 1998-02-01 TLE 4206 Electrical Characteristics 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 12 20 mA – Supply current IS IS – 20 30 mA IOUT1 = 0.4 A IOUT2 = – 0.4 A Supply current IS – 30 50 mA IOUT1 = 0.8 A IOUT2 = – 0.8 A – 7.4 8 V 6 6.9 – V – 0.5 – V – 20.5 23 V 17.5 20 – V – 0.5 – V Current Consumption Supply current Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF Hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF Hysteresis Semiconductor Group VUV ON VUV OFF VUVHY VOV OFF VOV ON VOVHY 6 VS increasing VS decreasing VUV ON – VUV OFF VS increasing VS decreasing VOV OFF – VOV ON 1998-02-01 TLE 4206 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. Unit Test Condition Outputs OUT1-2 Saturation Voltages Source (upper ) IOUT = – 0.2 A VSAT U – 0.85 1.15 V Tj = 25 °C Source (upper ) IOUT = – 0.4 A VSAT U – 0.90 1.20 V Tj = 25 °C Sink (upper) IOUT = – 0.8 A VSAT U – 1.10 1.50 V Tj = 25 °C Sink (lower) IOUT = 0.2 A VSAT L – 0.15 0.23 V Tj = 25 °C Sink (lower) IOUT = 0.4 A VSAT L – 0.25 0.40 V Tj = 25 °C Sink (lower) IOUT = 0.8 A VSAT L – 0.45 0.75 V Tj = 25 °C VSAT VSAT VSAT – 1.0 1.4 V – 1.2 1.7 V – 1.6 2.5 V VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VFU ILKU VFL – 1 1.5 V – – 5 – 0.9 1.4 Total drop Total drop Total drop IOUT = 0.2 A IOUT = 0.4 A IOUT = 0.8 A Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower Semiconductor Group 7 IF = 0.4 A mA IF = 0.4 A V IF = 0.4 A 1998-02-01 TLE 4206 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. VREFq RREF – 200 – mV IREF = 0 µA – 6 kΩ VFBq RFB – 200 – mV IFB = 0 µA – 6 kΩ 0 V < VFB < 0.5 V Current Amplification AHYST = IHYST / (IREF – IFB) AHYST 0.8 0.95 1.1 − – 20 µA < IHYST < – 10 µA; 10 µA < IHYST < 20 µA; IREF = 250 µA VHYST = VS / 2 Current Offset IHYSTIO –2 0.5 3 µA IREF = IFB = 250 µA VHYST = VS / 2 Threshold voltage High VHYH / VS VDBH / VS VDBL / VS VHYL / VS VHYW / VS VDBW / VS – 52 – % – – 50.4 – % – – 49.6 – % – – 48 – % – 3 4 5 % (VHYH – VHYL)/ VS 0.4 0.8 1.2 % (VDBH – VDBL)/ VS Input-Interface Input REF Quiescent voltage Input resistance – 0 V < VREF < 0.5 V Input FB Quiescent voltage Input resistance – Input/Output HYST Deadband voltage High Deadband voltage Low Threshold voltage Low Hysteresis Window Deadband Window Semiconductor Group 8 1998-02-01 TLE 4206 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. –1 – Unit Test Condition Input RANGE Input current Switch-OFF voltage High Switch-OFF voltage Low IRANGE VOFFH VOFFL – 100 0 1 µA 100 mV refer to VS 0 V < VRANGE < VS 300 400 500 mV refer to GND µA Input CPB (Current Peak Blanking) Charge current ICPBCH – 6.5 – Low voltage VCPBL – 20 100 High voltage threshold VCPBH VCPBC tCPB 5 5.7 6.5 – 6.2 – – 40 – Thermal shutdown junction temperature TjSD 150 175 200 °C – Thermal switch-on junction temperature TjSO 120 – 170 °C – Temperature hysteresis ∆T – 30 – K – Clamp voltage Blanking time VHYL > VHYST; VCPB = 0 V mV VHYL < VHYST < VHYH V VHYL > VHYST V VHYL > VHYST ms CCPB = 47 nF Thermal Shutdown Semiconductor Group 9 1998-02-01 TLE 4206 +VB +VB Dr 1N4001 CS 470 nF Dz R HYH 100 kΩ RR RANGE 13 50 k Ω R REF 1 kΩ TLE 4206G RangeAMP VS 8 36 V HalfBridge 6 OUT1 R REF VREFIN R FB 50 k Ω PFB REF 14 FB 1 ServoAMP Protection and Logic 50 kΩ M HalfBridge 9 OUT2 HYST 2 1 kΩ HystAMP R HYL 100 k Ω CCPB 47 nF GND 7 CPB 3,4,5, 10,11,12 GND AES02259 Figure 3 Application Circuit (Pin numbers are valid for TLE 4206G in P-DSO-14-4) Semiconductor Group 10 1998-02-01 TLE 4206 VMotor = VOUT1 - VOUT2 Motor Status Turn CW -2.0% (VREF -VFB )/ VS -0.4% 0.4% 2.0% Brake Turn CCW DBW DBL DBH HYW HYL HYH AED02260 Expressions: HY = Hysteresis DB = Deadband H = High L = Low W = Window Figure 4 Hysteresis, Phaselag and Deadband-Definitions Semiconductor Group 11 1998-02-01 TLE 4206 VOFFH VS(t ) VHYH VDBH VFB(t ) VDBL VHYL VREF(t ) VOFFL t Start-Command Stop-Command VCPBC VCPB(t ) VCPBH VCPBL t CPB t Blanking-Time t CPB t CPB VOUT2 H t CPB t L VOUT1 H Brake CCW Brake CW Brake CW Brake CCW t L Testconditions: VS = VB ; no revers polarity voltage diode R HYH = R HYL = 100 k Ω; R REF = R FB = 50 k Ω Figure 5 Motor Status AED02314 Timing and Phaselag Semiconductor Group 12 1998-02-01 TLE 4206 Package Outlines P-DSO-14-4 (Plastic Dual Small Outline Package) 1.27 0.1 0.35 +0.15 2) 8˚ max. 4 -0.2 0.19 +0.06 1.75 max 1.45 -0.2 0.2 -0.1 0.35 x 45˚ 1) 0.4 +0.8 0.2 14x 6 ±0.2 14 8 1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 13 GPS05093 Dimensions in mm 1998-02-01 TLE 4206 1.7 max 2.54 0.46 ±0.1 0.25 16x 16 1 7.87 ±0.38 0.25 +0.1 3.25 min 0.38 min 4.37 max P-DIP-16-5 (Plastic Dual In-line Package) 6.35 ±0.25 1) 8.9 ±1 9 19.05 ±0.25 1) 8 Index Marking 1) Does not include plastic or metal protrusion of 0.25max per side GPD05585 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Semiconductor Group 14 Dimensions in mm 1998-02-01