INFINEON SXT2907A

PNP Silicon Switching Transistor
SXT 2907 A
High current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
SXT 2907 A
2F
Q68000-A8300
B
SOT-89
C
E
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
60
V
Collector-base voltage
VCB0
60
Emitter-base voltage
VEB0
5
Collector current
IC
600
mA
Total power dissipation, TS = 120 ˚C
Ptot
1
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
90
Junction - soldering point
Rth JS
≤
30
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SXT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
60
–
–
Collector-base breakdown voltage
IC = 10 µA
V(BR)CB0
60
–
–
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0
5
–
–
Collector-base cutoff current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125 ˚C
ICB0
–
–
–
–
10
10
nA
µA
Collector cutoff current
VCE = 30 V, VBE = 0.5 V
ICEX
–
–
50
nA
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEB0
–
–
10
Base cutoff current
VCE = 30 V, VBE = 3 V
IBL
–
–
50
DC current gain
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
75
100
100
100
50
–
–
–
–
–
–
–
–
300
–
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
Base-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
V
–
V
–
–
–
–
0.4
1.6
–
–
–
–
1.3
2.0
SXT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 50 mA, VCE = 20 V, f = 100 MHz
fT
200
–
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
–
8
pF
Input capacitance
VEB = 2 V, f = 1 MHz
Cibo
–
–
30
Switching times
VCC = 30 V, VBE = 0.5 V, IC = 150 mA,
IB1 = 15 mA
td
tr
–
–
–
–
10
40
ns
ns
VCC = 6 V, IC = 150 mA,
IB1 = IB2 = 15 mA
ts
tf
–
–
–
–
80
30
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
3
SXT 2907 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance
Ccb = f (VCB)
f = 1 MHz
Permissible pulse load Ptot max / Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 20 V
Semiconductor Group
4
SXT 2907 A
Saturation voltage IC = f (VBE sat, VCE sat)
hFE = 10
Delay time td = f (IC)
Rise time tr = f (IC)
hFE = 10
Storage time ts = f (IC)
Fall time tf = f (IC)
Semiconductor Group
5
SXT 2907 A
DC current gain hFE = f (IC)
Semiconductor Group
6