SPI15N65C3 CoolMOSTM Power Transistor Product Summary Features • Low gate charge • Extreme dv/dt rated V DS 650 V R DS(on),max 0.28 Ω 63 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant TO-262-3-1 CoolMOS C3 designed for: • Notebook Adapter Type Package Marking SPI15N65C3 P-TO262-3-1 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 15 T C=100 °C 9.4 Pulsed drain current3) I D,pulse T C=25 °C 45 Avalanche energy, single pulse E AS I D=3 A, V DD=50 V 460 Avalanche energy, repetitive t AR2),3) E AR I D=5 A, V DD=50 V 0.8 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.0 Unit A mJ 5.0 A V DS=0...480 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 156 W -55 ... 150 °C page 1 2007-09-10 SPI15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current 2) IS Diode pulse current 3) I S,pulse Parameter Symbol Conditions Value Unit 15 T C=25 °C A 45 Values Unit min. typ. max. - - 0.8 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 650 - - V 2.1 3 3.9 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0.675 mA Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.5 25 V DS=600 V, V GS=0 V, T j=150 °C - 25 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.4 A, T j=25 °C - 0.25 0.28 Ω V GS=10 V, I D=9.4 A, T j=150 °C - 0.68 - f =1 MHz, open drain - 1.4 - Gate resistance Rev. 2.0 RG page 2 Ω 2007-09-10 SPI15N65C3 Parameter Values Symbol Conditions Unit min. typ. max. - 1600 - - 540 - - 67 - - 120 - - 32 - - 14 - - 70 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) Turn-on delay time t d(on) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=15 A, R G=6.8 Ω ns Rise time tr Turn-off delay time t d(off) Fall time tf - 11 - Gate to source charge Q gs - 9 - Gate to drain charge Q gd - 29 - Gate charge total Qg - 63 Gate plateau voltage V plateau - 5.4 - V - 1.0 1.2 V - 420 - ns - 8 - µC - 32 - A Gate Charge Characteristics V DD=480 V, I D=15 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=15 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Limited only by maximum temperature. 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 page 3 2007-09-10 SPI15N65C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 160 limited by on-state resistance 140 1 µs 120 10 µs 101 100 µs I D [A] P tot [W] 100 80 1 ms DC 10 ms 60 10 0 40 20 10-1 0 0 25 50 75 100 125 100 150 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z(thJC)=f(tp) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 50 20 V 10 V 0.5 8V 40 7V 30 0.1 10 6V I D [A] Z thJC [K/W] 0.2 -1 0.05 20 0.02 5.5 V 0.01 single pulse 10 5V 4.5 V 10 -2 10-5 0 10-4 10-3 10-2 10-1 t p [s] Rev. 2.0 0 5 10 15 20 25 V DS [V] page 4 2007-09-10 SPI15N65C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 25 4 20 V 10 V 20 V 8V 7V 20 6V 3 5.5 V 7V R DS(on) [Ω] I D [A] 15 5V 10 2 6.5 V 6V 4.5 V 1 5.5 V 5 5V 0 0 0 5 10 15 20 25 0 10 20 V DS [V] 30 40 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D= 9.4 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 0.8 25°C 40 30 I D [A] R DS(on) [Ω] 0.6 0.4 98 % 150°C 20 typ 0.2 10 0 0 -50 0 50 100 150 0 T j [°C] Rev. 2.0 2 4 6 8 10 V GS [V] page 5 2007-09-10 SPI15N65C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D= 15 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 150 °C, 98% 9 120 V 8 25 °C 7 480 V 101 25 °C, 98% 150 °C I F [A] V GS [V] 6 5 4 100 3 2 1 0 0 20 40 60 0 80 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=3 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 500 740 720 400 700 680 E AS [mJ] V BR(DSS) [V] 300 200 660 640 620 100 600 0 580 20 60 100 140 180 T j [°C] Rev. 2.0 -50 -10 30 70 110 150 T j [°C] page 6 2007-09-10 SPI15N65C3 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 12 105 104 9 Ciss C [pF] E oss [µJ] 103 Coss 102 6 3 Crss 101 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.0 0 100 200 300 400 500 600 V DS [V] page 7 2007-09-10 SPI15N65C3 Definition of diode switching characteristics Rev. 2.0 page 8 2007-09-10 SPI15N65C3 PG-TO262-3-1: Outlines Dimensions in mm/inches: Rev. 2.0 page 9 2007-09-10 SPI15N65C3 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2007-09-10