PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551F Package H-37265-2 Features Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz • Broadband internal matching • Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Efficiency = 44% • Typical CW performance - Output power at P–1dB = 75 W - Gain = 17 dB - Efficiency = 67% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power • Pb-free and RoHS compliant Efficiency 35 Adj. Ch. Power Ratio (dBc) -35 40 Drain Efficiency (%) PTFA080551E Package H-36265-2 -40 30 -45 25 -50 ACP Low 20 -55 ACP Up 15 -60 10 ALT Up -65 5 0 -70 29 31 33 35 37 39 41 43 Output Power, Avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 26 W AVG, ƒ = 959.8 MHz Characteristic Symbol Min Typ Max Unit EVM (RMS) — 2.5 — % Modulation Spectrum @ 400 kHz ACPR — –60 — dBc Modulation Spectrum @ 600 kHz ACPR — –75 — dBc Gain Gps — 18 — dB Drain Efficiency ηD — 44 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 18.5 — dB Drain Efficiency ηD 46.5 48 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.15 — V On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.3 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 219 W 1.25 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.8 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA080551E V4 H-36265-2 Thermally-enhanced, slotted flange, single-ended Tray PTFA080551E PTFA080551F V4 H-37265-2 Thermally-enhanced, earless flange, single-ended Tray PTFA080551F *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Edge EVM and Modulation Spectrum vs. Quiescent Current EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz VDD = 28 V, ƒ = 959.8 MHz, POUT = 22 W 1.7 -40 1.5 -50 400 kHz 1.3 -60 -70 1.1 0.9 600 kHz 0.7 0.35 0.40 0.45 0.50 0.55 -80 55 Efficiency -20 45 -40 35 400 kHz -60 25 -80 -100 -90 0.60 5 32 34 36 38 40 42 44 46 Output Power (dBm) Quiescent Current (A) EDGE EVM Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz (as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, ƒ1 = 959 MHz, ƒ2 = 960 MHz 10 55 -20 8 45 -30 35 Efficiency 4 25 2 15 EVM IMD (dBc) 6 Drain Efficiency (%) EVM RMS (avg. %) . 15 600 kHz Drain Efficiency (%) -30 EVM Modulation Spectrum (dBc) 1.9 EVM RMS (avg. %) . 0 -20 Modulation Spectrum (dBc) 2.1 -40 3rd Order -50 5th -60 7th 0 5 32 34 36 38 40 42 44 -70 46 30 Output Power (dBm) Data Sheet 33 36 39 42 45 48 Output Power, Avg. (dBm) 3 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Typical Performance (cont.) IM3 vs. Output Power at Selected Biases Linear Broadband Performance VDD = 28 V, ƒ1 = 959, ƒ 2 = 960 MHz VDD = 28 V, IDQ = 600 mA, POUT Avg = 44.39 dBm 51 IMD (dBc) -30 50 600 mA 30 Gain Efficiency (%) 300 mA 450 mA 40 -40 -50 49 20 48 10 Efficiency 47 0 46 -10 -20 45 Gain, Return Loss (dB) -20 Return Loss 44 860 -60 31 33 35 37 39 41 43 45 47 880 900 940 -30 960 Frequency (MHz) Output Power, Avg. (dBm) Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, ƒ = 960 MHz VDD = 28 V, IDQ = 600 mA, ƒ = 960 MHz 19 IDQ = 600 mA 18 21 70 20 60 19 Gain (dB) Power Gain (dB) 920 17 IDQ = 450 mA IDQ = 300 mA Gain 50 18 40 17 30 16 16 Efficiency 15 15 20 14 36 38 40 42 44 46 48 50 Data Sheet 10 36 Output Power (dBm) Drain Efficiency (%) 29 38 40 42 44 46 48 50 Output Power (dBm) 4 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Typical Performance (cont.) Output Power (P–1dB) vs. Drain Voltage IS-95 CDMA Performance IDQ = 600 mA, ƒ = 960 MHz VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz TCASE = 25°C 45 Drain Efficiency (%) 50 Output Power (dBm) 0 TCASE = 90°C 40 49 48 47 46 35 -20 30 -30 25 -40 ACP FC – 0.75 MHz 20 -50 15 -60 10 -70 5 45 -10 Efficiency -80 ACPR FC + 1.98 MHz 0 24 26 28 30 32 -90 29 Drain Voltage (V) Adj. Ch. Power Ratio (dBc) 51 31 33 35 37 39 41 43 Output Power, Avg. (dBm) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.778 A Normalized Bias Voltage (V) 1.03 1.55 A 1.02 3.11 A 1.01 3.88 A 4.66 A 1.00 5.44 A 0.99 6.22 A 0.98 7.00 A 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 5 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Broadband Circuit Impedance D Z Source Z Load G S Z Source Ω Frequency Z Load Ω MHz R jX R jX 869 8.91 –10.93 7.42 –1.63 880 3.72 –8.28 4.65 –1.74 894 5.93 –5.43 4.61 0.16 920 4.87 –7.16 4.88 –0.59 960 6.05 –5.57 4.89 0.86 See next page for circuit information Data Sheet 6 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 BCP56 V DD C2 0.001µF C3 0.001µF R3 2K V R4 2K V R5 5.1 V R6 10 V L1 V DD C5 0.1µF R7 5.1K C6 0.1µF C7 0.01µF C8 33pF C12 33pF C14 10µF 50V C13 1µF l5 R8 10 V C9 33pF l1 R F_IN l3 l4 C10 3.3pF C11 1.0pF C16 10µF 50V l6 C23 33pF DUT l2 C15 0.1µF l8 l9 l10 l11 C22 0.3pF l7 R F_OUT a 0 8 0 5 1 e f_ s c _ 0 h 6 -0 3 -1 3 C4 10µF 35V L2 C17 33µF C18 1µF C19 10µF 50V C20 0.1µF C21 10µF 50V Reference circuit schematic diagram for ƒ = 960 MHz Circuit Assembly Information DUT PCB PTFA080551E or PTFA080551F 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 960 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6, l7 l8 l9 l10 l11 0.070 0.122 0.031 0.063 0.162 0.150 0.198 0.145 0.009 0.026 λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 7.5 Ω λ, 67.0 Ω λ, 55.0 Ω λ, 11.1 Ω λ, 38.0 Ω λ, 38.0 Ω λ, 50.0 Ω 12.19 x 1.37 20.93 x 1.37 5.31 x 1.37 9.58 x 16.21 28.45 x 0.79 25.65 x 1.17 30.73 x 10.46 24.21 x 2.16 1.52 x 2.16 4.50 x 1.37 0.480 0.824 0.209 0.377 1.120 1.010 1.210 0.953 0.060 0.177 x x x x x x x x x x 0.054 0.054 0.054 0.638 0.031 0.046 0.412 0.085 0.085 0.054 1Electrical characteristics are rounded. Data Sheet 7 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Reference Circuit (cont.) R5 R4 R3 C3 C1 QQ1 C4 C5 C8 C16 R7 C2 R1R2 C7 C12 Q1 C6 L1 C13 C14 C15 R8 R6 C22 C23 C9 C10 C11 C20 C19 C17 C18 L2 C21 A080551in_01 A080551out_01 a080551ef_assy- 06-03-14 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C15, C20 C8, C9, C12, C17, C23 C7 C10 C11 C13, C18 C14, C16, C19, C21 C22 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 33 pF Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 100B 330 Capacitor, 0.01 µF Ceramic capacitor, 3.3 pF Ceramic capacitor, 1.0 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.3 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 5.1 k-ohms Chip Resistor 10 ohms ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 200B 103 100B 3R3 100B 1R0 920C105 TPSE106K050R0400 100B 0R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 45° X 2.03 [.080] 6. 2X 7.11 [.280] ALL FOUR CORNERS 2.66±.51 [.105±.020] D S FLANGE 9.78 [.385] 3.05 [.120] LID 10.16±.25 [.400±.010] CL G 2X R1.52 [R.060] 4X R0.63 [R.025] MAX SPH 1.57 [.062] 15.49±.51 [.610±.020] C66065-A2326-C001-01-0027 H-36265-2.dwg CL 4X R1.52 [R.060] 15.23 [.600] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] 0.0381 [.0015] -A1.02 [.040] 20.31 [.800] 6. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Data Sheet 6. Exposed metal plane on top and bottom of ceramic insulator. 7. All tolerances ± 0.1 [.025] / ± 0.127 [.005] unless specified otherwise. 9 of 11 Rev. 03, 2008-10-22 PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 2X 7.11 [.280] D FLANGE 10.16 [.400] ALL FOUR CORNERS 6. 45° X 2.03 [.080] 2.66±.51 [.105±.020] LID 10.16±.25 [.400±.010] CL 15.49±.51 [.610±.020] G 4X R0.63 [R.025] MAX C66065-A2327-C001-01-0027 H-37265-2.dwg CL 10.16±.25 [.400±.010] SPH 1.57 [.062] 3.61±.38 [.142±.015] 0.0381 [.0015] -A1.02 [.040] S 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] 6. Exposed metal plane on top and bottom of ceramic insulator. 7. All tolerances ± 0.1 [.025] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 03, 2008-10-22 PTFA080551E/F Confidential, Limited Internal Distribution Revision History: 2008-10-22 2008-10-14, Data Sheet Previous Version: Data Sheet Page 5 Subjects (major changes since last revision) Remeasure Voltage vs. Temperature 9, 10 11 Update package outline diagrams and information Update company information. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-10-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03, 2008-10-22