BSD816SN OptiMOS™2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS(on),max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 160 mΩ V GS=1.8 V 240 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT363 • 100% lead-free; RoHS compliant 6 1 Type Package Tape and Reel Information BSD816SN PG-SOT363 L6327: 3000 pcs/ reel 2 5 4 3 Marking Lead Free Packing XAs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Unit A Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±8 V Power dissipation1) P tot 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 Rev 2.2 mJ 55/150/56 page 1 2010-03-25 BSD816SN Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - - Gate threshold voltage V GS(th) V DS=VGS, I D=3.7 µA 0.3 0.55 0.95 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V µA Gate-source leakage current I GSS V GS=8 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=1.8 V, I D=0.44 A - 158 240 mΩ V GS=2.5 V, I D=1.4 A - 112 160 4.8 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide 70µm thick and 20mm long; they are present on both sides of the PCB. Rev 2.2 page 2 2010-03-25 BSD816SN Parameter Values Symbol Conditions Unit min. typ. max. - 126 180 - 47 67 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 7 10 Turn-on delay time t d(on) - 5.3 - Rise time tr - 9.0 - Turn-off delay time t d(off) - 11 - Fall time tf - 2.2 - Gate to source charge Q gs - 0.2 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.6 - Gate plateau voltage V plateau - 1.6 - V - - 0.5 A - - 6 - 0.87 1.1 V - 8.1 - ns - 1.4 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=2.5 V, I D=1.4 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=10 V, I D=1.4 A, V GS=0 to 2.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.2 T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=10 V, I F=1.4 A, di F/dt =100 A/µs page 3 2010-03-25 BSD816SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥2.5 V 1.5 0.5 1.25 0.375 I D [A] P tot [W] 1 0.25 0.75 0.5 0.125 0.25 0 0 0 40 80 120 160 0 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 1 µs 10 µs 100 µs 1 ms 10 0 102 10 ms 0.5 10-1 Z thJA [K/W] I D [A] 0.2 DC 10-2 0.02 0.01 single pulse 10-1 -2 10 -1 10 0 10 1 10 2 V DS [V] Rev 2.2 101 100 10-3 10 0.1 0.05 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] page 4 2010-03-25 BSD816SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 3 400 2V 1.3 V 350 2.5 V 2.5 1.4 V 1.5 V 1.8 V 300 1.6 V 1.8 V R DS(on) [mΩ] I D [A] 2 1.5 1.6 V 250 200 150 2V 1 0.5 2.5 V 100 1.5 V 1.4 V 50 1.3 V 1.2 V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 V DS [V] 1.5 2 2.5 3 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 10 1.5 8 1 I D [A] g fs [S] 6 4 25 °C 0.5 150 °C 2 0 0 0 1 1 2 2 V GS [V] Rev 2.2 0 1 2 3 4 I D [A] page 5 2010-03-25 BSD816SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.4 A; V GS=2.5 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 280 1.2 240 0.8 200 98% 160 120 V GS(th) [V] R DS(on) [mΩ] 98% typ typ 0.4 2% 80 0 40 0 -0.4 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C 100 Ciss 10 2 Coss I F [A] C [pF] 150°C, 98% 101 150 °C 10-1 Crss 10-2 100 10-3 0 5 10 15 20 V DS [V] Rev 2.2 25°C, 98% 0 0.2 0.4 0.6 0.8 1 1.2 V SD [V] page 6 2010-03-25 BSD816SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD 101 5 4.5 4 3.5 V GS [V] I AV [A] 3 25 °C 10 0 100 °C 10 V 2.5 4V 16 V 2 1.5 125 °C 1 0.5 10-1 0 100 101 102 103 0 0.25 t AV [µs] 0.5 0.75 1 1.25 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 25 V GS 24 Qg 23 V BR(DSS) [V] 22 21 20 V g s(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 2.2 page 7 2010-03-25 BSD816SN SOT363 Package Outline: Footprint: Packing: Reflow soldering: Dimensions in mm Rev 2.2 page 8 2010-03-25 BSD816SN Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2010-03-25