Data Sheet, March 2009 Control integrated Power System (CIPOS™) IKCS12G60DA IKCS12G60DC http://www.infineon.com/cipos Power Management & Drives N e v e r s t o p t h i n k i n g . CIPOS™ IKCS12G60DA IKCS12G60DC Revision History: Previous Version: Page 4 10 14 2009-04 2.2 Subjects (major changes since last revision) Added UL certification Change VIT,HYS Updated Zth-diagram of diode Rev.2.3 Authors: W. Frank, W. Brunnbauer Edition 2007-11 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 4/6/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office or representatives (http://www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office or representatives. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TrenchStop® is a registered trademark of Infineon Technologies AG. CIPOS™, CoolMOS™, CoolSET™, DuoPack™ and thinQ!™ are trademarks of Infineon Technologies AG. Data Sheet 2/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Table of Contents CiPoS™ Control integrated Power System ...................................................................................................4 Features........................................................................................................................................................4 Target Applications .....................................................................................................................................4 Description...................................................................................................................................................4 System Configuration .................................................................................................................................4 Internal Electrical Schematic...........................................................................................................................5 Pin Assignment.................................................................................................................................................6 Pin Description ............................................................................................................................................6 /HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) .............................................. 6 EN, /FAULT (Pin 21) .................................................................................................................................. 7 TEMP (Temperature monitor, Pin 22) ........................................................................................................ 7 ITRIP (Over-current detection, Pin 13)....................................................................................................... 7 VDD, VSS (control side supply and reference, Pin 14, 23)........................................................................ 7 VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8)................................................................... 7 V+ (positive bus input voltage, Pin 10)....................................................................................................... 7 Sh (shunt negative potential, Pin 12) ......................................................................................................... 7 Absolute Maximum Ratings ............................................................................................................................8 Module Section ............................................................................................................................................8 IGBT and Diode Section .............................................................................................................................8 Control Section............................................................................................................................................9 Recommended Operation Conditions............................................................................................................9 Static Characteristics.....................................................................................................................................10 Dynamic Characteristics................................................................................................................................11 Integrated Components .................................................................................................................................12 Circuit of a Typical Application.....................................................................................................................12 Integrated Components .................................................................................................................................13 Test Circuits and Parameter Definition ........................................................................................................15 Package Outline IKCS12G60DA ....................................................................................................................17 Package Outline IKCS12G60DC ....................................................................................................................18 Data Sheet 3/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC CIPOS™ Control integrated Power System Single In-Line Intelligent Power Module with integrated Shunt 3Φ-bridge 600V / 12A @ 25°C Features Description • Infineon TrenchStop® IGBTs with lowest VCE(sat) • Optimal adapted EmCon™ diode for low EMI • Integrated bootstrap diode and capacitor • Rugged SOI gate driver technology with stability against transient and negative voltage • Current measurement shunt integrated • Overcurrent shutdown • Temperature monitor • Undervoltage lockout at all channels • Fault-signal • Matched propagation delay for all channels • Cross-conduction prevention • Lead-free terminal plating; RoHS compliant • Qualified according to JEDEC1 (high temperature stress tests for 1000h) for target applications The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. This SIL-IPM is designed to control AC motors in variable speed drives for applications like air conditioning, compressors and washing machines. The package concept is specially adapted to power applications, which need extremely good thermal conduction and electrical isolation, but also EMI-save control and overload protection. The features of Infineon TrenchStop® IGBTs and EmCon diodes are combined with a new optimized Infineon SOI gate driver for excellent electrical performance. The integrated shunt improves the overall performance of the module. System Configuration • 3 halfbridges with TrenchStop® IGBT & FWEmCon diodes • 3Φ SOI gate driver Target Applications • Bootstrap diodes for high side supply • Washing machines • Integrated 100nF bootstrap capacitance • Consumer Fans and Consumer Compressors • Temperature sensor, passive components for adaptions • Isolated heatsink • Creepage distance typ. 3.2mm Certification UL 1577 (UL file E314539) 1 J-STD-020 and JESD-022 Data Sheet 4/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Internal Electrical Schematic V+ (10) Tr1, U-HS D1 Tr3, V-HS D3 Cge1 Cge5 Cge3 Tr2, U-LS D2 Cge2 Tr5, W-HS D5 Tr4, V-LS D4 Tr6, W-LS D6 Cge4 Cge6 Rsh Sh (12) Rvs U, VS1 (8) V, VS2 (5) W, VS3 (2) RH1 RL1 RH2 RL2 RH3 RL3 VB3 (1) VB2 (4) VB1 (7) CbsH1 CbsH2 CbsH3 Dbs1- 3 Rbs VDD (14) VCC /HIN1 (15) /HIN2 (16) /HIN3 (17) /HIN1 /HIN2 /HIN3 /LIN1 (18) /LIN2 (19) /LIN3 (20) /LIN1 /LIN2 /LIN3 Driver-IC C1 See Table for integrated components EN, /FAULT (21) ITRIP (22) R2 C3 TEMP (13) C2 RTS VSS (23) Figure 1: Internal Schematic Data Sheet 5/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Pin Assignment Pin Number Pin Name Pin Description 1 VB3 high side floating IC supply voltage 2 W,VS3 motor output W, high side floating IC supply offset voltage 3 na none 4 VB2 high side floating IC supply voltage 5 V,VS2 motor output V, high side floating IC supply offset voltage 6 na none 7 VB1 high side floating IC supply voltage 8 U,VS1 motor output U, high side floating IC supply offset voltage 9 na none 10 V+ positive bus input voltage 11 na none 12 Sh closed low side emitter with internal shunt 13 TEMP temperature control 14 VDD IC main supply +15V 15 /HIN1 input gate driver high side 1/U 16 /HIN2 input gate driver high side 2/V 17 /HIN3 input gate driver high side 3/W 18 /LIN1 input gate driver low side 1/U 19 /LIN2 input gate driver low side 2/V 20 /LIN3 input gate driver low side 3/W 21 EN, input logic enable, /FAULT indicates over-current and under-voltage (negative logic, open-drain output) 22 ITRIP input overcurrent shutdown 23 VSS IC negative supply Pin Description /HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) These pins are active low and they are responsible for the control of the integrated IGBT The Schmitt-trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-up resistor of about 75 kOhm is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. It is recommended for proper work of CIPOS™ not to provide input pulse-width lower than 1us. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). Figure 2: Input pin structure Data Sheet 6/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC A minimum deadtime insertion of typ 380ns is also provided, in order to reduce cross-conduction of the external power switches. EN, /FAULT (Pin 21) The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW logic level. The internal structure of the pin is the same as Figure 2 made exception of the switching levels of the Schmitt-Trigger, which are here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 900 ns. A pulldown resistor of typ. 75kΩ keeps the system off in case of lack of control signal. +5V EN /FAULT ≈ 50Ω VCC INPUT NOISE FILTER UZ=10.5V The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1 V is at least present. The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below VDDUV- = 10.4 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) VB to VS is the high side supply voltage. The high CiPoS™ From µC stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. SWITCH LEVEL VEN,TH+ VEN,TH- >1 from overcurrent from uv-detection Figure 3: Internal Circuit at pin EN This pin is also used for indication of exceptional conditions, such as overcurrent or undervoltage of the control section of the gate drive IC. The onresistance of the internal open-drain FET is typically 56Ω. TEMP (Temperature monitor, Pin 22) The integrated NTC-resistor is given in section Integrated Components. ITRIP (Over-current detection, Pin 13) The overcurrent signal is provided by the integrated shunt resistor. CIPOS™ provides an over-current detection function. The integrated ITRIP comparator threshold (typ 0.46V) is referenced to VSS ground. An input noise filter (typ: tITRIPMIN = 225ns) prevents the driver to detect false over-current events. The over-current detection generates a hard shut down of all outputs of the gate driver after the propagation delay of typically 900ns. As soon as the overcurrent detector triggers, the /FAULT signal is activated, which pulls down the enable pin. VDD, VSS (control side supply and reference, Pin 14, 23) VDD is the low side supply and it provides power both to input logic and to low side output power Data Sheet 7/18 Figure 4: Input filter timing diagram side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to VDD. This includes also integrated bootstrap capacitors of 100 nF at each floating supply, which are located very close to the gate drive circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1 V and a falling threshold of VDDUV- = 10.4 V according to Figure 4. VS1,2,3 provide a high robustness against negative voltage in respect of VSS of -50 V. This ensures very stable designs even under rough conditions. V+ (positive bus input voltage, Pin 10) The high side IGBT are connected to the bus voltage. It is recommended, that the bus voltage does not exceed 500 V. Sh (shunt negative potential, Pin 12) This pin is the available terminal of the shunt resistor, which is usually connected to the reference voltage of CIPOS™. Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Absolute Maximum Ratings (Tc = 25°C, VDD = 15V, if not stated otherwise) Module Section Description Condition Symbol Value Unit Min max Storage temperature range Tstg -40 125 °C Operating temperature control PCB1 TPCB - 125 °C - 260 °C 2500 - V Solder temperature Wave soldering, 1.6mm (0.063in.) from case for 10s Tsol Insulation test voltage RMS, f=50Hz, t =1min VISOL Mounting torque M3 screw and washer MS - 0.6 Nm Mounting pressure on surface Package flat on mounting surface - 150 N/mm² 3.1 - mm Creepage distance Max. peak power of bootstrap resistor NMC dS tp = 100µs Tc= 100°C 90 PBRpeak W IGBT and Diode Section Description Condition Max. Blocking Voltage 1 2 Symbol Value Unit min max VCES 600 - V DC output current Tc =25°C, TvJ <150°C Tc =80°C, TvJ <150°C Iu, Iv, Iw -12 -6 12 6 A Repetitive peak collector current tp limited by TvJmax Iu, Iv, Iw -18 18 A Short circuit withstand time2 (SCSOA) VDD = 15V,VDC = 400V, TvJ = 150°C tsc - 5 µs IGBT reverse bias safe operating area (RBSOA) VDD = 15V,VDC ≤ 500V, TvJ = 150°C, IC = 6A VCEmax = 600V Power dissipation per IGBT Tc = 25°C Ptot - 35 W Operating junction temperature range IGBT Diode TvjI TvjD -40 -40 150 150 °C Full Square Monitored by pin 13 Allowed number of short circuits: <1000; time between short circuits: >1s. Data Sheet 8/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Description Condition Symbol Unit Value min typ max Single IGBT thermal resistance, junction-case RthJC - - 3.0 Single diode thermal resistance, junction-case RthJCD - - 4.2 K/W Control Section Description Condition Value Symbol Unit min max Module supply voltage VDD -1 20 High side floating supply voltage (VB vs. VS) VBS -1 20 VDD-VBS-6 VDD-VBS-50 600 V Vin -1 10 V Operating junction temperature1 TJ,IC - 125 Max. switching frequency fPWM - 20 High side floating IC supply offset voltage tp < 500ns Input voltage LIN, HIN, EN, ITRIP VS1,2,3 V kHz Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified. Description Symbol Unit Value min max High side floating supply offset voltage VS -3 500 High side floating supply voltage (VB vs. VS) VBS 12.5 17.5 High side output voltage (VHO vs. VS) VHO 0 VBS Low side power supply VDD 12.5 17.5 Logic input voltages LIN,HIN,EN,ITRIP VIN 0 5 1 V Monitored by pin 13 Data Sheet 9/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Static Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Symbol Collector-Emitter breakdown voltage VIN = 5V, IC = 0.25 mA V(BR)CES Collector-Emitter saturation voltage VDD = 15V, Iout = +/- 6A TvJ = 25°C TvJ = 150°C VCE(sat) VIN = 5V, Iout = +/- 6A TvJ = 25°C TvJ = 150°C VF VCE = 600V, VIN = 5V TvJ = 25°C TvJ = 150°C VDD = 15V, tSC ≤ 5µs VCC = 400V, TvJ = 150°C ICES Diode forward voltage Zero gate voltage collector current of IGBT Short circuit collector current1 IC(SC) 2 Unit Value min typ max 600 - - - 1.6 1.9 2.1 - 1.65 1.6 2.05 - - 40 1000 - 40 - A V V V µA Logic "0" input voltage (LIN,HIN) VIH 1.7 2.1 2.4 V Logic "1" input voltage (LIN,HIN) VIL 0.7 0.9 1.1 V EN positive going threshold VEN,TH+ 1.9 2.1 2.3 V EN negative going threshold VEN,TH- 1.1 1.3 1.5 V ITRIP positive going threshold VIT,TH+2 360 460 540 mV ITRIP input hysteresis VIT,HYS2 45 75 - mV VDD and VBS supply undervoltage positive going threshold VDDUV+ VBSUV+2 11.0 12.1 12.8 V VDD and VBS supply undervoltage negative going threshold VDDUVVBSUV-2 9.5 10.4 11.0 V VCC and VBS supply undervoltage lockout hysteresis VDDUVH VBSUVH2 1.2 1.7 - V 9.0 10.1 13.0 V Input clamp voltage (/HIN, /LIN, EN, ITRIP) IIN = 4 mA VINCLAMP Quiescent VBx supply current (VBx only) VHIN = low IQB - 360 550 µA Quiescent VDD supply current (VDD only) VIN = float IQDD - 2.0 3.0 mA Input bias current VIN = 5V IIN+ - 55 100 µA Input bias current VIN = 0V IIN- - 110 200 µA EN Input bias current VEN = 5V IEN+ - 62 120 µA Tj,IC = 125°C ILVS2 - 30 - µA Leakage current of high side 1 Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Test is not subject of product test, verified by characterisation Data Sheet 10/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Dynamic Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Symbol Unit Value min typ max Turn-on propagation delay High side or low side VLIN,HIN = 0V; Iout = 6A, VDC = 300V td(on) - 638 - ns Turn-on rise time High side or low side Iout = 6A, VDC = 300V VLIN,HIN = 5V tr - 22 - ns Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 6A, VDC = 300V td(off) - 812 - ns Turn-off fall time High side or low side Iout = 6A, VDC = 300V VLIN,HIN = 0V tf - 30 - ns Shutdown propagation delay ENABLE VEN = 0V, Iu, Iv, Iw = 6A tEN - 900 - ns Shutdown propagation delay ITRIP VITRIP = 1V, Iu, Iv, Iw = 6A tITRIP - 900 - ns Input filter time ITRIP VITRIP = 1V tITRIPmin 155 210 380 ns Input filter time at LIN for turn on and off and input filter time at HIN for turn on only VLIN,HIN = 0 V & 5V tFILIN 120 270 - ns Input filter time at HIN for turn off VHIN = 5V tFILIN1 - 220 - ns Input filter time at HIN for turn off VHIN = 5 V tFILIN2 - 400 - ns tFILEN 300 430 - ns tFLTCLR - 4.7 - ms Min. deadtime between low side and high side DTPWM - 1 - µs Deadtime of gate drive circuit DTIC - 380 - ns - 89 141 - - 123 163 - - 22 59 - Input filter time EN Fault clear time after ITRIP-fault VLIN,HIN = 0 V & 5V VITRIP = 0 V IGBT Turn-on Energy (includes reverse recovery of diode) Iout = 6A, VDC = 300V Tvj = 25°C Tvj = 150°C Eon IGBT Turn-off Energy Iout = 6A, VDC = 300V Tvj = 25°C Tvj = 150°C Eoff Iout = 6A, VDC = 300V Tvj = 25°C Tvj = 150°C Erec Diode recovery Energy Data Sheet 11/18 µJ µJ µJ Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Integrated Components Description Symbol1 Condition Value Unit min typ max Resistor (0.25 W) Rbs - 10 - Ω Shunt-Resistor Rsh - 20 - mΩ Resistor R2 - 0.47 kΩ Resistor TNTC = 25°C RTS - 100 - B-Constant of NTC (Negative Temperature Coefficient) TNTC = 25°C B25 - 4250 - K Bootstrap diode forward voltage IFDbs = 1A, TJ = 25°C VFDbs - 1.3 - V Capacitor C1 - 100 - nF Capacitor C2 - 2.2 - Capacitor C3 Bootstrap Capacitor CbsHx Capacitor Cgex 2.2 - 100 390 pF Circuit of a Typical Application V+ PFC Stage U, VS1 V, VS2 W, VS3 3-ph AC Motor PFC Control Sh VB3 VB2 VB1 DC/DC Converter VDD Micro Controller /HIN1 /HIN2 /HIN3 /LIN1 /LIN2 /LIN3 5V VCC /HIN1 /HIN2 /HIN3 Driver-IC /LIN1 /LIN2 /LIN3 5V ITRIP EN, /FAULT TEMP VSS 1 Symbols according to Figure 1 Data Sheet 12/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Integrated Components 15A 15A 125°C 12A IF, forward CURRENT IC, COLLECTOR CURRENT VGE=25°C 150°C 9A 6A 3A 12A 9A 6A VGE=25°C 125°C 3A 0A 150°C 0A 0V 1V 2V 3V 0V VCE, COLLECTOR EMITTER VOLTAGE Figure 5. Typical IGBT output characteristic (VDD = 15V) 2V VF FORWARD VOLTAGE Figure 6. Typical diode forward current as a function of forward voltage td(off) 1000ns 1V td(off) 1000ns td(on) t, SWITCHING TIMES t, SWITCHING TIMES td(on) tr 100ns tf 100ns tf 10ns tr 0A 5A 10A 10ns 25°C 15A IC, COLLECTOR CURRENT Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE = 300V, VDD = 15V Dynamic test circuit in Figure A) Data Sheet 50°C 75°C 100°C 125°C TvJ, JUNCTION TEMPERATURE Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, VDD = 15V, IC = 6A Dynamic test circuit in Figure A) 13/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Eon E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Eon 0.60mJ 0.40mJ Eoff 0.20mJ 0.15mJ Eoff 0.10mJ 0.05mJ Erec Erec 0.00mJ 0A 5A 10A 0.00mJ 25°C 15A RTS, NTC RESISTANCE 1000kOhm 100kOhm 10kOhm 1kOhm 125°C 0 10 K/W -1 10 K/W -2 0°C 25°C 50°C 75°C 100°C TNTC, NTC TEMPERATURE Figure 11. Typical Resistance of NTC as a function of NTC temperature Data Sheet 100°C Single Pulse IGBT Diode 10 K/W -25°C 75°C TvJ, JUNCTION TEMPERATURE Figure 10. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, VDD = 15V, IC = 6A Dynamic test circuit in Figure A) ZthJC, TRANSIENT THERMAL RESISTANCE IC, COLLECTOR CURRENT Figure 9. Typical switching energy losses as a function of collector current (inductive load, TJ = 150°C, VCE = 300V, VDD = 15V Dynamic test circuit in Figure A) 50°C 1µs 10µs 100µs 1ms 10ms 100ms 1s tP, PULSE WIDTH Figure 12. IGBT and Diode transient thermal impedance as a function of pulse width 14/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Test Circuits and Parameter Definition t Erec Erec = ∫ vD ⋅i F dt 0 Figure B: Definition of diodes switching characteristics Figure A: Dynamic test circuit Leakage inductance Lσ =180nH Stray capacitance C σ =39pF Figure C: Definition of Enable and ITIRP propagation delay t Eoff Eoff = ∫v CEx t Eon ⋅i Cx dt Eon = ∫ vCEx ⋅i Cx dt 0 0 Figure D: Switching times definition and switching energy definition Data Sheet 15/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC tFILIN tFILIN LIN HIN LIN on off on off high HO LO LO low Figure E: Short Pulse suppression Data Sheet 16/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Package Outline IKCS12G60DA Description Condition Weight Value Symbol mP Unit min typ max - 17 - g Note: There may occur discolourations on the copper surface without any effect of the thermal properties. Data Sheet 17/18 Rev. 2.3, March 2009 CIPOS™ IKCS12G60DA IKCS12G60DC Package Outline IKCS12G60DC Description Condition Weight Value Symbol mP Unit min typ max - 17 - g Note: There may occur discolourations on the copper surface without any effect of the thermal properties. Data Sheet 18/18 Rev. 2.3, March 2009