SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking SN7002W Package PG-SOT-323 L6327: 3000 pcs/reel sSN SN7002W PG-SOT-323 Yes L6433: 10000 pcs/reel sSN Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 0.23 TA=70°C 0.18 Pulsed drain current Unit ID puls 0.92 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.23A, VDS =48V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) V 0 (<250V) Power dissipation Ptot 0.5 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/150/56 Page 1 2009-08-19 SN7002W Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 250 Characteristics Thermal resistance, junction - ambient RthJS K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - - 10 nA RDS(on) - 4.1 7.5 Ω RDS(on) - 2.3 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.2A Drain-source on-state resistance VGS=10V, ID=0.23A Rev. 2.4 Page 2 2009-08-19 SN7002W Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.1 0.21 - S pF Dynamic Characteristics Transconductance g fs VDS≥2*ID*RDS(on)max, ID=0.18A Input capacitance C iss VGS=0, VDS=25V, - 34 45 Output capacitance C oss f=1MHz - 7.2 9.6 Reverse transfer capacitance C rss - 3 4.5 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.4 3.6 Rise time tr ID=0.23A, RG =6Ω - 2.8 4.2 Turn-off delay time td(off) - 6 9 Fall time tf - 8.5 12.75 - 0.11 0.17 - 0.42 0.63 - 1 1.5 V(plateau) VDD =48V, ID = 0.23 A - 3.4 - V IS - - 0.23 A - - 0.92 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =48V, ID =0.23A VDD =48V, ID =0.23A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=0.23A - 0.85 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 10.8 16.2 ns Reverse recovery charge Qrr diF/dt=100A/µs - 3.2 4.8 nC Rev. 2.4 Page 3 2009-08-19 SN7002W 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V 0.55 SN7002W 0.26 SN7002W A W 0.22 0.45 0.2 0.18 0.35 ID Ptot 0.4 0.16 0.3 0.14 0.25 0.12 0.1 0.2 0.08 0.15 0.06 0.1 0.04 0.05 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 SN7002W 10 3 /ID ID R 10 2 t = 25.0µs p 100 µs ) (on DS ZthJA 0 DS =V 10 SN7002W K/W A 10 160 TA 3 Safe operating area 10 °C 1 ms -1 10 1 10 ms D = 0.50 10 0 0.20 0.10 10 0.05 -2 0.02 10 -1 DC 0.01 single pulse 10 -3 10 0 10 1 V 10 10 -2 -7 10 2 VDS Rev. 2.4 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2009-08-19 SN7002W 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 7.5 0.6 10 7V 6V 5V 4.5V 4V 3.7V 3.5V 3.0V 0.4 6 RDS(on) ID A 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V Ω 5.25 4.5 3.75 0.3 3 0.2 2.25 1.5 0.1 0.75 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 A 0.5 VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.5 0.3 S gfs A ID 0.7 ID 0.3 0.2 0.15 0.2 0.1 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 V 0 0 4.5 VGS Rev. 2.4 0.1 0.2 0.3 0.4 A 0.6 ID Page 5 2009-08-19 SN7002W (.) Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.23 A, VGS = 10 V parameter: VGS = VDS ; ID =26µA SN7002W 2.2 15 Ω V 98% 1.8 11 VGS(th) RDS(on) 12 10 9 1.6 typ. 1.4 1.2 8 7 1 6 2% 98% 0.8 5 0.6 4 3 0.4 typ 2 0.2 1 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 2 10 0 SN7002W A Ciss pF C IF 10 -1 10 1 Coss 10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 V 10 -3 0 30 VDS Rev. 2.4 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-19 SN7002W 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , V(BR)DSS = f (Tj ) ID = 0.16 A pulsed, Tj = 25 °C 16 SN7002W SN7002W 72 V V(BR)DSS V VGS 12 10 0.2 VDS max 8 68 66 64 0.5 VDS max 62 6 0.8 VDS max 60 4 58 2 0 0 56 0.2 0.4 0.6 0.8 1 1.2 1.4 nC 1.7 QG Rev. 2.4 54 -60 -20 20 60 100 °C 180 Tj Page 7 2009-08-19 SN7002W Rev. 2.4 Page 8 2009-08-19