PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 300 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 30 -25 IM3 Efficiency • Thermally-enhanced packaging, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion = –50 dBc - Adjacent channel power = –52 dBc • Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 40 W - Efficiency = 59% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power 25 -30 20 -35 IM3 Up -40 15 IM3 Low -45 10 ACPR Drain Efficiency (%) IM3 (dBc), ACPR (dBc) PTFA210301E Package H-30265-2 5 -50 0 -55 27 29 31 33 35 37 39 41 Average Output Power (dBm) RF Characteristics 2-Carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 300 mA, POUT = 8 W average f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17 — dB Drain Efficiency ηD — 27 — % Intermodulation Distortion IMD — –38 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2008-03-04 PTFA210301E RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 300 mA, POUT = 30 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency ηD 34 36 — % Intermodulation Distortion IMD — –32 –30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.23 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 300 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 145 W 0.83 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 30 W CW) RθJC 1.2 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTFA210301E H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA210301E V1 *See Infineon distributor for future availability. Data Sheet 2 of 9 Rev. 03, 2008-03-04 PTFA210301E Typical Performance (data taken in a production test fixture) Broadband Performance Power Sweep, CW Conditions VDD = 28 V, IDQ = 300 mA, POUT = 38.0 dBm VDD = 28 V, IDQ = 300 mA, f = 2170 MHz -15 20 Efficiency -20 15 Gain -25 18 50 Efficiency 17 40 Gain 10 -30 2070 2090 2110 2130 2150 2170 2190 2210 16 30 15 20 14 10 0 10 20 30 40 50 Frequency (MHz) Output Power (W) Two-carrier WCDMA at Various Biases Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, f = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 28V IDQ = 300 mA, f = 2140 MHz, POUT = 45 dBm PEP -20 Intermodulation Distortion (dBc) -32 3rd Order IMD (dBc) 60 Drain Efficiency (%) 25 -10 Gain (dB) Return Loss 30 TCASE = 25°C TCASE = 90°C 19 -5 Input Return Loss (dB) Gain (dB), Efficiency (%) 35 400 mA -37 -42 -47 350 mA -52 250 mA 300 mA -57 27 30 33 36 3rd Order -30 -35 -40 5th -45 -50 -55 7th -60 0 39 5 10 15 20 25 30 35 40 Tone Spacing (MHz) Output Power, Avg. (dBm) Data Sheet -25 3 of 9 Rev. 03, 2008-03-04 PTFA210301E Typical Performance (cont.) Single-carrier WCDMA Drive-up 2-Tone Drive-up VDD = 28 V, IDQ = 300 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW -25 40 -30 35 IM3 -35 30 -40 25 -45 20 IM5 -50 15 -55 10 IM7 -60 5 -65 0 30 32 34 36 38 40 42 44 46 48 -35 40 ACPR Up -40 -45 -50 10 -55 0 28 -15 45 Efficiency 40 35 -25 30 IM3 Up 25 -35 20 Gain -45 15 Normalized Bias Voltage (V) 50 Gain (dB), Drain Efficiency (%) 3rd Order Intermodulation Distortion (dBc) 1.03 -10 28 29 30 31 0.20 A 1.02 0.33 A 1.01 0.50 A 1.10 A 1.00 1.50 A 0.99 2.00 A 0.98 2.50 A 3.00 A 0.97 0.96 0.95 -20 10 25 26 27 40 0.06 A POUT (PEP) = 45 dBm, tone spacing = 1 MHz 23 24 36 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current IDQ = 300 mA, f = 2140 MHz, -40 32 Average Output Power (dBm) IM3, Drain Efficiency and Gain vs. Supply Voltage -30 20 Efficiency Output Power, PEP (dBm) -20 30 ACPR Low Drain Efficiency (%) 45 Efficiency Drain Efficiency (%) Intermodulation Distortion (dBc) -20 Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 300 mA, f = 2140 MHz, tone spacing = 1 MHz 0 20 40 60 80 100 Case Temperature (°C) 32 33 Supply Voltage (V) Data Sheet 4 of 9 Rev. 03, 2008-03-04 PTFA210301E Broadband Circuit Impedance D Z Source Z Load G S Z Source Ω Frequency Z Load Ω MHz R jX R jX 2070 14.70 -9.41 7.26 -3.82 2110 14.33 -9.52 7.01 -3.70 2140 14.07 -9.61 6.91 -3.69 2170 13.81 -9.69 6.77 -3.53 2210 13.40 -9.79 6.52 -3.39 0.5 0.4 0.3 0.2 0.1 0.0 Z Load 2210 MHz 2070 MHz Z Source 0.1 2070 MHz 2210 MHz E W AV <--- W ARD L OA D T HS T O L E NG 0.1 Z0 = 50 Ω 0. 2 Data Sheet 5 of 9 Rev. 03, 2008-03-04 PTFA210301E Reference Circuit C1 0.001µF R2 1.3KV R1 1.2KV QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2KV C3 0.001µF R4 2K V R5 10 V R6 5.1K V C4 10 µF 35V C5 R7 0.1µF 5.1K V R8 1KV C6 1µF C7 0.1µF C8 .01µF C12 10pF C9 10pF l2 l3 l4 l5 l6 C15 10µF 50V VDD l8 DUT l1 C14 1µF l7 R9 10V RF_IN C13 0.02µF l9 l 10 l11 C10 C11 0.3pF 10pF l12 C16 0.7pF l13 RF_OUT C17 10pF A210301ef_sch Reference Circit Schematic for f = 2140 MHz Circuit Assembly Information DUT PTFA210301E PCB 0.76 mm [.030”] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 (taper) l11 l12 l13 LDMOS Transistor Rogers TMM4 Electrical Characteristics at 2140 MHz 1 Dimensions: L x W (mm) 0.013 λ, 50.0 Ω 1.02 x 1.42 0.081 λ, 50.0 Ω 6.17 x 1.42 0.108 λ, 42.0 Ω 8.23 x 1.85 0.172 λ, 61.0 Ω 13.39 x 0.94 0.013 λ, 42.0 Ω 0.94 x 1.85 0.023 λ, 15.0 Ω 1.63 x 7.57 0.063 λ, 9.9 Ω 4.29 x 12.07 0.171 λ, 53.0 Ω 13.13 x 1.22 0.039 λ, 6.5 Ω 2.64 x 19.10 0.185 λ, 6.5 Ω / 50.0 Ω 4.70 x 19.10 / 1.37 0.025 λ, 50.0 Ω 1.88 x 1.42 0.128 λ, 50.0 Ω 9.78 x 1.42 0.057 λ, 50.0 Ω 4.32 x 1.42 2 oz. copper Dimensions: L x W (in.) 0.040 x 0.056 0.243 x 0.056 0.324 x 0.073 0.527 x 0.037 0.037 x 0.073 0.064 x 0.298 0.169 x 0.475 0.517 x 0.048 0.104 x 0.752 0.185 x 0.752 / 0.054 0.074 x 0.056 0.385 x 0.056 0.170 x 0.056 1Electrical characteristics are rounded. Data Sheet 6 of 9 Rev. 03, 2008-03-04 PTFA210301E Reference Circuit (cont.) R4 R5 C5 C3 C12 R6 10 R3 C4 + 35V R2 R7 R8 C6 C7 LM R1 C8 C1 QQ1 C2 Q1 C13 C14 R5 C5 RF_OUT R9 C10 C1 C4 C11 C3 C15 C9 RF_IN R4 C16 C17 R6 + R7 R3 R2 R8 LM QQ1 C2 Q1 R1 C6 C8 C7 C9 A210301ef_dtl A 2 1 0 3 0 1 e f _ a ssy Reference Circuit* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C7 C6, C14 C8 C9, C11, C12, C17 C10 C13 C15 C16 Q1 QQ1 R1 R2 R3 R4 R5 R6, R7 R8 R9 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 1 µF Capacitor, 0.01 µF Capacitor, 10 pF Capacitor, 0.3 pF Capacitor, 0.02 µF Tantalum capacitor, 10 µF, 50 V Capacitor, 0.7 pF Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 10 ohms Chip resistor, 5.1 k-ohms Chip resistor, 1 k-ohms Chip resistor, 10 k-ohms Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND P4525-ND PCC104BCT-ND 100B 103 100B 100 100B 0R3 100B 203 TPS106K050R0400 100B 0R7 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND P1.0KGCT-ND P10GCT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 9 Rev. 03, 2008-03-04 PTFA210301E Package Outline Specifications Package H-30265-2 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 03, 2008-03-04 PTFA210301E/F Confidential, Limited Internal Distribution Revision History: 2008-03-04 2005-06-22, Data Sheet, Rev. 02 Previous Version: Page Subjects (major changes since last revision) All Data Sheet Remove references to alternate products. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-03-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2008-03-04