SPI20N60CFD Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO262 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge Type Package Pb-free Marking SPI20N60CFD PG-TO262 Yes 20N60CFD Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A T C = 25 °C 20.7 T C = 100 °C 13.1 Pulsed drain current, t p limited by T jmax ID puls 52 Avalanche energy, single pulse EAS 690 mJ ID = 10 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V 1 Avalanche current, repetitive t AR limited by T jmax IAR 20 A Reverse diode dv/dt dv/dt 40 V/ns Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C IS=20.7A, V DS=480V, T j=125°C Rev. 2.5 Page 1 V 2007-02-01 SPI20N60CFD Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 80 V/ns di F/dt 900 A/µs Values Unit V DS = 480 V, ID = 20.7 A, Tj = 125 °C Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering T sold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 600 - - Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=0.25mA Drain-Source avalanche V (BR)DS V GS=0V, I D=20A - 700 - Gate threshold voltage V GS(th) ID=1000µΑ, V GS=VDS 3 4 5 Zero gate voltage drain current IDSS V DS=600V, V GS=0V, V breakdown voltage Tj=25°C, - 2.1 - Tj=150°C - 1700 - - - 100 Gate-source leakage current IGSS V GS=20V, V DS=0V Drain-source on-state resistance RDS(on) V GS=10V, I D=13.1A, Gate input resistance Rev. 2.5 RG µA Ω Tj=25°C - 0.19 0.22 Tj=150°C - 0.51 - f=1MHz, open Drain - 0.54 - Page 2 nA 2007-02-01 SPI20N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 17.5 - S pF ID=13.1A Input capacitance Ciss V GS=0V, VDS=25V, - 2400 - Output capacitance Coss f=1MHz - 780 - Reverse transfer capacitance Crss - 50 - Effective output capacitance,2) Co(er) - 83 - - 160 - energy related Effective output capacitance,3) V GS=0V, pF V DS=0V to 480V Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 12 - Rise time tr ID=20.7A, RG=3.6Ω - 15 - Turn-off delay time td(off) - 59 - Fall time tf - 6.4 - - 15 - - 54 - - 95 124 - 7 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, I D=20.7A V DD=480V, I D=20.7A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, I D=20.7A V 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 3C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS. Rev. 2. Page 3 2007-02-01 SPI20N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous Conditions IS TC=25°C Values Unit min. typ. max. - - 20.7 - - 52 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage V SD V GS=0V, IF=I S - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , - 150 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 1 - µC Peak reverse recovery current Irrm - 13 - A Peak rate of fall of reverse di rr/dt - 1400 - A/µs recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.007686 Rth2 Cth1 0.0003764 0.015 Cth2 0.001412 Rth3 0.029 Cth3 0.001932 Rth4 0.114 Cth4 0.005299 Rth5 0.136 Cth5 0.012 Rth6 0.059 Cth6 0.091 Tj K/W R th1 R th,n T case Ws/K External Heatsink P tot (t) C th1 C th2 C th,n T amb Rev. 2.5 Page 4 2007-02-01 SPI20N60CFD 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( VDS ) parameter : D = 0 , TC=25°C SPP20N60CFD 2 10 240 W A 200 160 10 1 10 0 ID P tot 180 140 120 100 80 60 10 -1 10 -2 tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC 40 20 0 0 20 40 60 80 100 120 °C 160 10 0 10 1 10 2 TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS parameter: D = t p/T V 10 VDS 0 10 70 K/W -1 10 -2 ID ZthJC 10 Vgs = 10V Vgs = 8V A Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 50 Vgs = 5.5V Vgs = 5V 40 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse -3 30 20 10 10 -4 10 Rev. 2.5 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp 0 0 0 4 8 12 16 20 V 28 VDS Page 5 2007-02-01 3 SPI20N60CFD 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS RDS(on)=f(ID) parameter: Tj=150°C, VGS 1.5 Vgs = 20V Vgs = 7.5V A Vgs = 7V Vgs = 6.5V Vgs = 6V 30 Vgs = 5.5V Vgs = 5V Vgs = 4.5V R DS(on) ID 40 25 Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 20V Ω 0.9 20 15 10 0.6 5 0 0 4 8 12 16 V 20 0.3 28 0 5 10 15 20 25 A 40 ID 30 V DS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 13.1 A, VGS = 10 V parameter: tp = 10 µs 1.3 SPP20N60CFD 70 Ω A Tj = 25°C 1 50 0.9 ID R DS(on) 1.1 0.8 Tj = 150°C 40 0.7 0.6 30 0.5 0.4 20 98% 0.3 typ 0.2 10 0.1 0 -60 -20 20 60 100 °C 0 180 Rev. 2.5 0 4 8 12 V 20 VGS Tj Page 6 2007-02-01 SPI20N60CFD 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (V SD) parameter: ID = 20.7 A pulsed parameter: Tj , tp = 10 µs SPP20N60CFD 10 16 V A 0.2 VDS max 12 0.8 VDS max 10 1 10 0 IF V GS 2 SPP20N60CFD 10 8 6 T j = 25 °C typ 4 T j = 150 °C typ T j = 25 °C (98%) 2 0 T j = 150 °C (98%) 10 0 20 40 60 80 100 120 nC -1 150 0 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (T j) par.: T j ≤ 150 °C par.: ID = 10 A, V DD = 50 V 20 750 mJ 600 A I AR E AS 550 500 450 Tj(Start)=25°C 400 10 350 300 250 200 Tj(Start)=125°C 5 150 100 50 0 -3 10 Rev. 2.5 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 0 20 40 60 80 100 120 °C 160 Tj Page 7 2007-02-01 SPI20N60CFD 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR=1mJ SPP20N60CFD 500 720 V 680 P AR V (BR)DSS W 660 300 640 620 200 600 580 100 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (V DS) Eoss=f(V DS) parameter: VGS=0V, f=1 MHz 10 5 14 pF µJ 4 E oss 10 C Ciss 10 8 10 3 6 10 2 4 Coss 2 Crss 10 1 0 100 200 300 400 V 0 600 V DS Rev. 2.5 0 100 200 300 400 V 600 VDS Page 8 2005-02-01 6 SPI20N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 20.7A Qrr = f(ID) parameter: di/dt = 100 A/µs 1800 1800 1700 1700 1600 Q rr [nC] Q rr [nC] Tj = 125°C 1600 1500 1500 1400 1300 1200 1400 1100 Tj = 25°C 1000 1300 900 800 1200 700 600 1100 500 1000 25 50 °C 75 400 125 Tj 2 4 6 8 10 12 14 16 A 20 ID 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 20.7 A 3400 3200 Q rr [nC] 3000 Tj = 125°C 2800 2600 2400 2200 Tj = 25°C 2000 1800 1600 1400 1200 1000 100 Rev. 2.5 200 300 400 500 600 700 A/µs 900 di/dt Page 9 2007-02-01 SPI20N60CFD Definition of diodes switching characteristics Rev. 2.5 Page 10 2007-02-01 SPI20N60CFD PG-TO-262-3-1 Rev. 2.5 Page 11 2007-02-01 SPI20N60CFD Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Page 12 2007-02-01