IRF JANSH2N7268U

PD - 90720C
IRHN7150
JANSR2N7268U
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/603
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHN7150
IRHN3150
IRHN4150
Radiation Level RDS(on)
100K Rads (Si) 0.065Ω
300K Rads (Si) 0.065Ω
600K Rads (Si) 0.065Ω
ID
34A
34A
34A
QPL Part Number
JANSR2N7268U
JANSF2N7268U
JANSG2N7268U
IRHN8150
1000K Rads (Si) 0.065Ω
34A
JANSH2N7268U
SMD-1
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
Units
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( for 5s)
2.6 (Typical )
C
g
For footnotes refer to the last page
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1
02/01/01
IRHN7150, JANSR2N7268U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
100
—
—
V
—
0.13
—
V/°C
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.065
Ω
0.070
4.0
V
—
S( )
25
µA
250
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
160
35
65
45
190
170
130
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1200
200
—
—
—
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 21A
„
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A „
VDS= 160V,VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 34A
VDS = 50V
Ω
nA
nC
VDD = 50V, ID = 34A,
VGS = 12V, RG =2.35Ω
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
34
136
1.4
570
5.8
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 34A, VGS = 0V ➃
Tj = 25°C, IF = 34A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.6
0.83
—
°C/W
Test Conditions
soldered to a 1”sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHN7150, JANSR2N7268U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-1)
Diode Forward Voltage ➃
600 to 1000K Rads (Si)2
Test Conditions
Units
Min
Max
Min
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.065
200
1.25
—
—
—
—
—
4.5
100
-100
50
0.09
nA
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =21A
—
0.065
—
0.09
Ω
VGS = 12V, ID =21A
—
1.4
1.4
V
VGS = 0V, IS = 34A
—
Max
V
1. Part number IRHN7150 (JANSR2N7268U)
2. Part numbers IRHN3150 (JANSF2N7268U), IRHN4150 (JANSG2N7268U) and IRHN8150 (JANSH2N7268U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2))
28
36.8
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
100
100
100
80
60
39
100
90
70
50
—
Energy
(MeV)
285
305
120
100
VDS
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHN7150, JANSR2N7268U
Post-Irradiation
Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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Post-Irradiation
Pre-Irradiation
IRHN7150, JANSR2N7268U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
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Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
RadiationPost-Irradiation
Characteristics
Pre-Irradiation
IRHN7150, JANSR2N7268U
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
Pre-Irradiation
IRHN7150, JANSR2N7268U
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
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IRHN7150, JANSR2N7268U
Fig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 19. Typical Output Characteristics
Fig 21. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHN7150, JANSR2N7268U
Fig 22. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
Fig 25. Maximum Safe Operating
Area
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IRHN7150, JANSR2N7268U
Pre-Irradiation
35
VDS
I D , Drain Current (A)
30
VGS
RD
D.U.T.
RG
25
+
-VDD
20
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 27a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 26. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 27b. Switching Time Waveforms
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
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Pre-Irradiation
IRHN7150, JANSR2N7268U
1 5V
L
VD S
D .U .T
RG
IA S
VGS
20V
D R IV E R
+
- VD D
A
0 .0 1 Ω
tp
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 29b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 30a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
IRHN7150, JANSR2N7268U
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=0.86mH
Peak IL = 34A, VGS =12V
➂ ISD ≤ 34A, di/dt ≤ 140A/µs,
VDD ≤ 100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
12
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