Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1447 IRHNA9064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ® TRANSISTOR P-CHANNEL RADHARD -60Volt, 0.055Ω 0.055Ω, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Part Number IRHNA9064 BV DSS -60V n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-Weight Pre-Radiation Parameter VGS EAS I AR EAR dv/dt TJ TSTG ID -48A Features: Absolute Maximum Ratings ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.055Ω IRHNA9064 Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight To Order -48 -30 -192 300 2.4 ± 20 500 -48 30 -5.5 -55 to 150 300 (For 5 sec) 3.3 (typical) Units A W W/K V mJ A mJ V/ns o C g Previous Datasheet Index Next Data Sheet IRHNA9064 Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -60 — — V — -0.048 — V/°C — — -2.0 16 — — — — — — — — 0.055 0.065 -4.0 — -25 -250 — — — — — — — — — — — — — — — — — — — 8.7 -100 100 260 60 86 62 227 200 115 — — 8.7 — ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ Max Units Ω V S( ) Ω BVDSS µA nA nC ns nH — — — 7400 3200 540 — — — pF Test Conditions VGS =0 V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -30A VGS = -12V, ID = -48A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS =-20 V VGS = 20V VGS = -12V, ID = -48A VDS = Max Rating x 0.5 VDD = -30V, ID = -48A, RG = 2.35Ω Measured from drain lead, Modified MOSFET symbol show6mm (0.25 in) from package ing the internal inductances. to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. VGS = 0V, VDS = -25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — -48 -192 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.0 480 3.7 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = -48A, VGS = 0V Tj = 25°C, IF = -48A, di/dt ≤ -100A/µs VDD ≤ -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 0.42 TBD — * Limited by Pin diameter To Order Units Test Conditions K/W Soldered to a copper-clad PC board Previous Datasheet Index Next Data Sheet IRHNA9064 Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments and the results are shown in Table 3. IRHNA9064 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD 100K Rads (Si) Units Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate Test Conditions Min Max -60 -2.0 — — — — — -4.0 -100 100 -25 0.055 nA µA Ω VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -30A — -3.0 V TC = 25°C, IS = -48A,VGS = 0V V 1011 Rads (Si)/sec 1012 Rads (Si)/sec VDSS Parameter Min Typ Max Min Typ Max Drain-to-Source Voltage — -48 — — — -100 — -160 0.8 — IPP di/dt L1 — — -100 — -800 0.1 — Table 3. Single Event Effects — — -48 — — Units Test Conditions V Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/µsec Rate of rise of photo-current µH Circuit inductance required to limit di/dt Parameter Typical Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BVDSS -60 V Ni 28 1 x 10 5 ~41 -60 5 To Order Previous Datasheet Index Next Data Sheet IRHNA9064 Pre-Radiation Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -48A, VGS = -12 V, 25 ≤ RG ≤ 200Ω ISD ≤ -48A, di/dt ≤−170 A/µs, VDD ≤ BV DSS, T J ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C -12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — 0. 15 ( . 00 6 ) 1 3 .48 (.5 3 1 ) 1 3 .19 (.5 1 9 ) -C - 3 S U RF A C E S 3 .6 0 (. 14 2 ) M A X. -A - 11 .3 2 (.4 46 ) 11 .0 3 (.4 34 ) 5 1 2. 21 (.4 81 ) 1 1. 92 (.4 69 ) 17 .6 7 (. 69 6 ) 17 .3 8 (. 68 4 ) 0.8 9 (.03 5 ) M IN . 4 -B - 2 5 0.3 8 (.0 15 ) 3X 0.1 3 (.0 05 ) 2 X 3 .70 (.1 4 6 ) 3 .41 (.1 3 4 ) 0 .3 6 ( .0 14 ) N O TE S : 1 . D IM E N S IO N & T O LE R A N C E P E R A N S I Y 1 4 .91 -1 98 2 2 . C O N T R O LL IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ). 4 . D IM E N S IO N IN C L U D E S M E T A L L IZ A T IO N F LA S H . 5 . D IM E N S IO N D O E S N O T IN C LU D E M E T A LL IZ A T IO N F LA S H . M C A M B M 4.1 4 (.1 63 ) 3.8 4 (.1 51 ) 3 5 1 .27 (.0 5 0 ) M IN . 4 3. 05 (.1 20 ) 6 .1 0 (.24 0 ) L E A D A S S IG N M E N T S 1 = D R A IN 2 = G A TE 3 = S O U R CE SMD-2 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/96 To Order