IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS®-P Trench Power-Transistor Product Summary V DS Features -30 R DS(on),max (SMD version) • P-channel - Logic Level - Enhancement mode 4 ID • Automotive AEC Q101 qualified V mΩ -100 A • MSL1 up to 260°C peak reflow PG-TO263-3-2 • 175°C operating temperature PG-TO262-3-1 PG-TO220-3-1 • Green package (RoHS Compliant) • Ultra low Rds(on) • 100% Avalanche tested • Intended for reverse battery protection Type Package Marking IPB100P03P3L-04 PG-TO263-3-2 3P03L04 IPI100P03P3L-04 PG-TO262-3-1 3P03L04 IPP100P03P3L-04 PG-TO220-3-1 3P03L04 drain pin 2 gate pin 1 source pin 3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Value -100 I D,pulse T C=25°C -400 Avalanche energy, single pulse E AS I D=-80A 450 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Rev. 1.1 A -100 Pulsed drain current2) T C=25°C Unit mJ -16 / +5 V 200 W -55 ... +175 °C 55/175/56 page 1 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.65 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-475µA -1 -1.5 -2.1 Zero gate voltage drain current I DSS V DS=-30V, V GS=0V, T j=25°C - -0.1 -1 - -10 -100 V DS=-30V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=-16V, V DS=0V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-50A - 4.8 7.6 mΩ V GS=-4.5V, I D=-50A, SMD version - 4.5 7.3 V GS=-10V, I D=-80A - 3.3 4.3 V GS=-10V, I D=-80A, SMD version - 3.0 4 Rev. 1.1 page 2 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Parameter Symbol Values Conditions Unit min. typ. max. - 7150 9300 - 2150 2800 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 1650 2500 Turn-on delay time t d(on) - 30 - Rise time tr - 45 - Turn-off delay time t d(off) - 200 - Fall time tf - 180 - Gate to source charge Q gs - 25 33 Gate to drain charge Q gd - 55 82.5 Gate charge total Qg - 150 200 Gate plateau voltage V plateau - -3.0 - V A V GS=0V, V DS=-25V, f =1MHz V DD=-15V, V GS=-10V, I D=-50A, R G=6Ω pF ns Gate Charge Characteristics2) V DD=-24V, I D=-80A, V GS=0 to -10V nC Reverse Diode Diode continous forward current2) IS T A=25°C - - -100 Diode pulse current2) I S,pulse T A=25°C - - -400 Diode forward voltage V SD V GS=0V, I F=-80A -0.6 -1 -1.2 V Reverse recovery time2) t rr V R=-15V, I F=-50A, di F/dt =100A/µs - 50 - ns Reverse recovery charge2) Q rr - 55 - nC 1) Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry I D=-195A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 1 Power dissipation 2 Drain current P tot=f(T C); V GS ≤ -4 V I D=f(T C); V GS ≤ -4 V 120 250 100 200 80 -I D [A] P tot [W] 150 60 100 40 50 20 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs limited by on-state resistance 0.5 10 µs 100 µs 1 ms 10-1 -I D [A] Z thJC [K/W] 100 0.1 0.05 0.01 10-2 10 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.1 10-6 page 4 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 400 16 10 V 5V 4.5 V 3V 3.5 V 14 300 12 4V R DS(on) [mΩ] -I D/ [A] 10 200 3.5 V 8 6 4V 4.5 V 5V 4 100 3V 10 V 2 2.5 V 0 0 0 1 2 3 4 5 0 6 20 40 60 80 100 120 140 160 180 -I D [A] -V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4V R DS(on) = f(T j); I D = -80 A; V GS = 10 V parameter: T j 200 -55 °C 5 175 °C 25 °C 4 R DS(on) [mΩ] -I D [A] 150 100 3 2 50 1 0 0 1 2 3 4 5 Rev. 1.1 -60 -20 20 60 100 140 180 T j [°C] -V GS [V] page 5 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 2 1.75 4750µA 1.5 475µA C [pF] -V GS(th) [V] 1.25 1 Ciss 104 0.75 Coss 0.5 Crss 0.25 103 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 -V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 I F [A] -I AV [A] 25°C 100°C 150°C 175 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -V SD [V] Rev. 1.1 1 10 100 1000 t AV [µs] page 6 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 2000 37 20 A 1800 35 1600 1400 1000 -V BR(DSS) [V]/ E AS [mJ] 33 1200 40 A 800 31 29 600 80 A 400 27 200 0 25 75 125 175 25 225 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 8V V GS 32 V 10 Qg -V GS [V] 8 6 4 2 Q gate Q gs Q gd 0 0 50 100 150 200 Q gate [nC] Rev. 1.1 page 7 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Revision History Version Changes Date Type on page 1 changed from IP_100P06P3L-04 to IP_100P03PL 25.09.2007 04 Rev 1.1 Rev. 1.1 page 9 2007-09-25