PD - 91300D IRHN9250 JANSR2N7423U 200V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662 ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9250 100K Rads (Si) IRHN93250 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω ID -14A -14A QPL Part Number JANSR2N7423U JANSF2N7423U International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-1 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range PCKG Mounting Surface Temp. Weight Units -14 -9.0 -56 150 1.2 ±20 500 -14 15 -41 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( for 5s) 2.6 (typical) g For footnotes refer to the last page www.irf.com 1 06/06/03 IRHN9250, JANSR2N7423U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -200 Typ Max Units — — V VGS = 0V, ID =-1.0mA — -0.24 — V/°C Reference to 25°C, ID = -1.0mA — — -2.0 4.0 — — — — — — — — 0.315 0.33 -4.0 — -25 -250 VGS(th) gfs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 -100 100 200 45 85 60 240 225 220 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4200 690 160 — — — RDS(on) Test Conditions VGS = -12V, ID = -9.0A➃ VGS = -12V, ID = -14A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -9.0A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -14A VDS = -100V Ω V S( ) Ω BVDSS ∆BVDSS/∆TJ µA nA nC VDD = -100V, ID = -14A, VGS =-12V, RG = 2.35Ω ns nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -14 -56 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.6 775 7.2 V nS µC t on Forward Turn-On Time Test Conditions Tj = 25°C, IS = -14A, VGS = 0V ➃ Tj = 25°C, IF = -14A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 6.6 0.83 — Units °C/W Test Conditions soldered to a 1” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN9250, JANSR2N7423U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-1) Diode Forward Voltage ➃ 300 K Rads (Si)2 Units Test Conditions Min Max Min Max -200 -2.0 — — — — — -4.0 -100 100 -25 0.317 -200 -2.0 — — — — — V -5.0 -100 nA 100 -25 µA 0.317 Ω — 0.315 — 0.315 Ω VGS = -12V, ID =-9.0A — -3.6 — -3.6 V VGS = 0V, IS = -14A VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS =-160V, VGS =0V VGS = -12V, ID =-9.0A 1. Part number IRHN9250 (JANSR2N7423U) 2. Part numbers IRHN93250 (JANSF2N7423U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V 43 -200 -200 -200 39 -200 -200 -160 Energy (MeV) 285 305 @VGS=15V -200 -75 @VGS=20V — — -250 VDS -200 -150 Cu Br -100 -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN9250, JANSR2N7423U 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 20µs PULSE WIDTH T = 25 C 10 1 -5.0V 10 100 1 TJ = 25 ° C TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH Fig 3. Typical Transfer Characteristics 4 8 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 3.0 7 10 100 Fig 2. Typical Output Characteristics 100 6 ° -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics -VGS , Gate-to-Source Voltage (V) J 10 -VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -14A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 4000 Coss 2000 C rss 20 -VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) IRHN9250, JANSR2N7423U 0 ID = -14 A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 50 -VDS , Drain-to-Source Voltage (V) 100 150 200 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-160V VDS = -100V VDS =-40V TJ = 25 ° C 10 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 100 100us 10 1 1ms TC = 25 °C TJ = 150 ° C Single Pulse 10 10ms 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHN9250, JANSR2N7423U Pre-Irradiation 15 RD VDS VGS -ID , Drain Current (A) 12 D.U.T. RG - + 9 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. CaseTemperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.05 0.02 0.01 0.01 0.0001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHN9250, JANSR2N7423U L VDS tp VD D A IA S D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG V0GS -2 V 1200 TOP 1000 BOTTOM ID -6.3A -8.9A -14A 800 600 400 200 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHN9250, JANSR2N7423U Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L= 5.1mH Peak IL = -14A, VGS = -12V ➂ ISD ≤ -14A, di/dt ≤ -600A/µs, VDD ≤ -200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/03 8 www.irf.com