Bulletin I25155 rev. D 04/03 ST330C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate 720A Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (E-PUK) Major Ratings and Characteristics Parameters ST330C..C Units 720 A 55 °C 1420 A 25 °C @ 50Hz 9000 A @ 60Hz 9420 A @ 50Hz 405 KA2s @ 60Hz 370 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 I t V DRM/V RRM tq typical TJ www.irf.com 400 to 1600 V 100 µs - 40 to 125 °C 1 ST330C..C Series Bulletin I25155 rev. D 04/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 400 500 Type number 04 ST330C..C 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST330C..C Units Conditions 720 (350) A 180° conduction, half sine wave 55 (75) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled I TSM 9000 t = 10ms Max. peak, one-cycle non-repetitive surge current 9420 A 7570 I 2t Maximum I2 t for fusing V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 370 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 4050 KA2s High level value of on-state slope resistance KA2√s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.91 V (I > π x IT(AV)),TJ = TJ max. 0.92 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.58 slope resistance r t2 reapplied 100% VRRM 405 262 Maximum I2 √t for fusing t = 8.3ms t = 10ms 7920 287 I 2√t No voltage mΩ (I > π x IT(AV)),TJ = TJ max. 0.57 V TM Max. on-state voltage 1.96 IH Maximum holding current 600 IL Typical latching current 1000 V mA Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current ST330C..C 1000 td Typical delay time 1.0 tq Typical turn-off time 100 Units Conditions A/µs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs µs 2 Gate drive 20V, 20Ω, tr ≤ 1µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 Blocking Parameter ST330C..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 50 mA TJ = TJ max, rated V DRM /V RRM applied Triggering Parameter PGM ST330C..C Maximum peak gate power 10.0 PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative DC gate current required to trigger VGT IGD VGD TYP. MAX. 200 - 100 200 50 - 2.5 - DC gate voltage required to trigger 1.8 3.0 1.1 - DC gate current not to trigger DC gate voltage not to trigger TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5.0 gate voltage IGT W 20 gate voltage -VGM Units Conditions 10 0.25 TJ = - 40°C mA TJ = 25°C TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST330C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, junction to heatsink Units Conditions °C 0.09 0.04 DC operation single side cooled K/W RthC-hs Max. thermal resistance, 0.02 case to heatsink 0.01 F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Case style www.irf.com K/W TO - 200AB (E-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table 3 ST330C..C Series Bulletin I25155 rev. D 04/03 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Conduction angle Units Single Side Double Side Conditions Single Side Double Side 180° 0.012 0.011 0.008 0.007 120° 0.014 0.012 0.014 0.013 90° 0.017 0.015 0.019 0.017 60° 0.025 0.022 0.026 0.023 30° 0.043 0.036 0.043 0.037 TJ = TJ max. K/W Ordering Information Table Device Code ST 33 0 C 16 C 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) 25°± 5° All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST330C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.09 K/ W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 180° 80 70 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 130 ST330C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/ W 120 110 100 90 Conduction Period 80 70 60 50 40 30° 30 60° 90° 120° 180° DC 20 0 100 200 300 400 500 600 700 800 900 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST330C..C Series 130 ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Angle 70 60 30° 50 60° 90° 40 120° 180° 30 20 0 200 400 600 800 1000 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25155 rev. D 04/03 130 ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Period 70 30° 60 60° 50 90° 120° 40 180° 30 20 DC 10 0 200 400 600 800 1000 1200 1400 1600 Average On-state Current (A) Average On-state Current (A) 180° 120° 90° 60° 30° 1200 1000 RMS Limit 800 600 Conduction Angle 400 ST330C..C Series TJ = 125°C 200 0 0 Maximum Average On-state Power Loss (W) 1400 1800 DC 180° 120° 90° 60° 30° 1600 1400 1200 1000 RMSLimit 800 Conduction Period 600 400 ST330C..C Series TJ = 125°C 200 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 1200 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 8000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330C..C Series 4000 3500 1 6 Fig. 4 - Current Ratings Characteristics 10 100 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 3 - Current Ratings Characteristics 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 7500 No Voltage Reapplied Rated VRRM Reapplied 7000 8500 6500 6000 5500 5000 4500 4000 ST330C..C Series 3500 0.01 0.1 1 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST330C..C Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 Steady State Value RthJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.01 ST330C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Frequenc y Limited by PG(AV) Device: ST330C..C Series 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7 ST330C..C Series Bulletin I25155 rev. D 04/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04 /03 8 www.irf.com