PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free SC M2 DirectFET Power MOSFET V(BR)DSS 100V RDS(on) typ. 51mΩ max. 62mΩ RG (typical) 3.5Ω Qg (typical) 8.3nC DirectFET ISOMETRIC SB Applicable DirectFET Outline and Substrate Outline SB AUIRF7665S2TR AUIRF7665S2TR1 M4 L4 L6 L8 Description The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 100 VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f Power Dissipation PD @TA = 25°C EAS EAS(tested) TJ Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (Tested Value) Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and TSTG Storage Temperature Range RθJA Junction-to-Ambient RθJA Junction-to-Ambient RθJA Junction-to-Ambient RθJ-Can Junction-to-Can RθJ-PCB Junction-to-PCB Mounted f e A 4.1 Continuous Drain Current, VGS @ 10V (Package Limited) PD @TC = 25°C IAR EAR TP 10.2 Continuous Drain Current, VGS @ 10V (Silicon Limited)e Pulsed Drain Current V 14.4 Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 25°C IDM Units 77 58 f 30 h g g W 2.4 37 56 h mJ See Fig. 18a,18b,16,17 270 -55 to + 175 A mJ °C Thermal Resistance Parameter fl e j k f Linear Derating Factor HEXFET® is a registered trademark of International Rectifier. www.irf.com Typ. Max. ––– 63 12.5 ––– 20 ––– ––– 5.0 1.4 Units °C/W ––– 0.2 W/°C 1 01/05/10 AUIRF7665S2TR/TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter Conditions Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.10 51 ––– 62 VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.0 ––– 4.0 -13 5.0 ––– Forward Transconductance 8.8 ––– ––– Internal Gate Resistance Drain-to-Source Leakage Current ––– ––– 3.5 ––– 5.0 20 Ω µA VDS = 100V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– ––– ––– 250 100 nA VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 ∆VGS(th)/∆TJ gfs RG(int) IDSS IGSS VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.9A mΩ V VDS = VGS, ID = 25µA mV/°C VDS = 25V, ID = 8.9A S V/°C i VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Conditions Min. Typ. Max. Total Gate Charge ––– 8.3 13 VDS = 50V Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– VGS = 10V Qgs2 Qgd Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 0.77 3.2 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.4 4.0 ––– ––– Qoss td(on) Output Charge Turn-On Delay Time ––– ––– 4.7 3.8 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 6.4 7.1 ––– ––– tf Fall Time ––– 3.6 Ciss Coss Input Capacitance Output Capacitance ––– ––– 515 110 Crss Coss Reverse Transfer Capacitance Output Capacitance ––– ––– 30 530 ––– ––– Coss Coss eff. Output Capacitance Effective Output Capacitance ––– ––– 70 115 ––– ––– Min. Typ. Max. Qg Units nC ID = 8.9A See Fig. 11 nC VDS = 16V, VGS = 0V VDD = 50V ns ––– RG = 6.8Ω VGS = 10V ––– ––– VGS = 0V VDS = 25V ID = 8.9A pF i ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr g ––– ––– 14.4 Units A (Body Diode) Diode Forward Voltage ––– ––– 58 ––– ––– 1.3 V Reverse Recovery Time Reverse Recovery Charge ––– ––– 33 38 ––– ––– ns nC Surface mounted on 1 in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 8.9A, VGS = 0V TJ = 25°C, IF = 8.9A, VDD = 25V di/dt = 100A/µs i i Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes through are on page 11 2 www.irf.com AUIRF7665S2TR/TR1 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model DFET2 MSL1 Class B AEC-Q101-002 ESD Human Body Model Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 RoHS Compliant Qualification standards can be found at International Rectifiers web site: Yes http://www.irf.com Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF7665S2TR/TR1 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 1 100 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP 0.1 0.01 5.0V 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 5.0V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.001 0.1 1 10 0.1 100 0.1 V DS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) ID = 8.9A 120 100 T J = 125°C 80 T J = 25°C 40 7 8 9 10 11 12 13 14 320 Vgs = 10V 280 240 200 120 15 T J = 25°C 80 40 0 10 20 30 40 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 4. Typical On-Resistance vs. Drain Current 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) T J = 125°C 160 Fig 3. Typical On-Resistance vs. Gate Voltage 10 1 T J = -40°C TJ = 25°C TJ = 175°C 0.1 VDS = 25V ≤60µs PULSE WIDTH 0.01 ID = 8.9A VGS = 10V 2.0 1.5 1.0 0.5 2 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 4 100 Fig 2. Typical Output Characteristics 140 6 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 60 1 16 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature www.irf.com AUIRF7665S2TR/TR1 T J = -40°C TJ = 25°C TJ = 175°C 6.5 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 100 5.5 4.5 3.5 ID = 25µA ID = 250µA ID = 1.0mA D = 1.0A 2.5 10 1 0.1 VGS = 0V 0.01 1.5 -75 -50 -25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 175 VSD, Source-to-Drain Voltage (V) T J , Temperature ( °C ) Fig 7. Typical Threshold Voltage vs. Junction Temperature Fig 8. Typical Source-Drain Diode Forward Voltage 10000 18 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25°C 16 C oss = C ds + C gd 14 C, Capacitance (pF) Gfs, Forward Transconductance (S) 20 12 10 T J = 175°C 8 6 4 1000 Ciss Coss 100 Crss V DS = 10V 2 380µs PULSE WIDTH 0 10 0 2 4 6 8 10 12 14 16 18 1 ID,Drain-to-Source Current (A) 100 Fig 10. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical Forward Transconductance Vs. Drain Current 14.0 16 ID= 8.9A 12.0 14 VDS= 80V VDS= 50V 10.0 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 10 VDS, Drain-to-Source Voltage (V) VDS= 20V 8.0 6.0 4.0 2.0 12 10 8 6 4 2 0.0 0 0 2 4 6 8 10 12 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) T C , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature www.irf.com 5 AUIRF7665S2TR/TR1 EAS , Single Pulse Avalanche Energy (mJ) 160 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 100µsec 1msec 10msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 DC ID 1.64A 3.04A BOTTOM 8.90A 140 TOP 120 100 80 60 40 20 0.01 0 0 1 10 100 1000 25 VDS, Drain-to-Source Voltage (V) 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ1 τ2 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.0001 τ4 τ4 τ τi (sec) 0.49687 0.000119 0.00517 8.231486 2.55852 0.018926 1.94004 0.002741 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse Avalanche Current (A) ID, Drain-to-Source Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse) 10 0.01 0.05 1 0.10 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current Vs.Pulsewidth 6 www.irf.com AUIRF7665S2TR/TR1 40 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 8.9A EAR , Avalanche Energy (mJ) 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 17. Maximum Avalanche Energy Vs. Temperature V(BR)DSS 15V tp DRIVER L VDS D.U.T RG VGS 20V + - VDD IAS tp A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds L VCC DUT 0 20K 1K Vgs S Vgs(th) Fig 19a. Gate Charge Test Circuit VDS VGS RG Qgodr RD Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform D.U.T. VDS + - V DD 90% 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) Fig 20a. Switching Time Test Circuit www.irf.com tr t d(off) tf Fig 20b. Switching Time Waveforms 7 AUIRF7665S2TR/TR1 Automotive DirectFET Board Footprint, SB (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations CL G = GATE D = DRAIN S = SOURCE D D G D 8 S D www.irf.com AUIRF7665S2TR/TR1 Automotive DirectFET Outline Dimension, SB Outline (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations Automotive DirectFET Part Marking www.irf.com 9 AUIRF7665S2TR/TR1 Automotive DirectFET Tape & Reel Dimension (Showing component orientation). 10 www.irf.com AUIRF7665S2TR/TR1 Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Rθ is measured at TJ of approximately 90°C. IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. 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Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11