PD - 95285
IRF7491PbF
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l Lead-Free
l
VDSS
RDS(on) max
16m:@VGS = 10V
80V
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
9.7A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
ID
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
Max.
Units
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
9.7
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
6.1
IDM
Pulsed Drain Current
77
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
4.4
-55 to + 150
V/ns
°C
h
c
e
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
Thermal Resistance
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
Parameter
–––
20
°C/W
RθJA
Junction-to-Ambient (PCB Mount) *
–––
50
Notes through are on page 8
www.irf.com
1
09/16/04
IRF7491PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
V
Conditions
80
–––
–––
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
–––
0.08
–––
V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
14
16
Gate Threshold Voltage
3.5
–––
5.5
mΩ
V
VGS = 10V, ID = 5.8A
VGS(th)
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 64V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
f
VDS = VGS, ID = 250µA
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
9.6
–––
–––
S
Conditions
gfs
Qg
Forward Transconductance
VDS = 25V, ID = 5.8A
Total Gate Charge
–––
51
76
Qgs
Gate-to-Source Charge
–––
18
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
22
–––
VDD = 40V
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
32
–––
tf
Fall Time
–––
10
–––
Ciss
Input Capacitance
–––
2940
–––
VGS = 0V
Coss
Output Capacitance
–––
290
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
160
–––
Coss
Output Capacitance
–––
980
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
210
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
310
–––
VGS = 0V, VDS = 0V to 64V
ID = 5.8A
nC
VDS = 40V
f
ID = 5.8A
ns
RG = 6.2Ω
VGS = 10V
pF
f
ƒ = 1.0MHz
e
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
dh
Typ.
Max.
Units
–––
130
mJ
–––
5.8
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
9.7
ISM
(Body Diode)
Pulsed Source Current
–––
–––
77
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 5.8A, VGS = 0V
trr
Reverse Recovery Time
–––
47
–––
ns
Qrr
Reverse Recovery Charge
–––
110
–––
nC
ton
Forward Turn-On Time
2
ch
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = 5.8A, VDD = 25V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRF7491PbF
100
100
10
BOTTOM
1
6.0V
0.1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM
10
6.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
1
0.1
1
10
100
1000
0.1
VDS, Drain-to-Source Voltage (V)
T J = 150°C
10.00
T J = 25°C
1.00
VDS = 25V
20µs PULSE WIDTH
0.10
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
6.0
10
100
1000
Fig 2. Typical Output Characteristics
100.00
5.0
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
ID = 9.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7491PbF
100000
VGS , Gate-to-Source Voltage (V)
ID= 5.8A
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Ciss
1000
Crss
Coss
100
VDS= 64V
VDS= 40V
10.0
VDS= 16V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
VDS, Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
T J = 25°C
1.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
20
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100µsec
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.10
10msec
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7491PbF
12
VDS
ID , Drain Current (A)
VGS
9
RD
D.U.T.
RG
+
-V DD
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
Ambient
Temperature( °(°C)
TTA ,, Case
Temperature
C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
RDS(on) , Drain-to -Source On Resistance (m Ω)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF7491PbF
20
19
18
17
VGS = 10V
16
15
14
13
12
11
10
0
10
20
30
40
50
60
70
45
40
35
30
25
ID = 9.7A
20
15
10
5
0
80
6
ID , Drain Current (A)
7
8
9
10
11
12
13
14
15
16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
300
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
240
BOTTOM
ID
2.6A
4.7A
5.8A
180
120
60
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF7491PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
b
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
www.irf.com
7
IRF7491PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 7.4mH
RG = 25Ω, IAS = 5.8A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
www.irf.com