Bulletin I25190 rev. D 04/00 ST700C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 910A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) Typical Applications DC motor control Controlled DC power supplies AC controllers case style TO-200AC (B-PUK) Major Ratings and Characteristics Parameters ST700C..L Units 910 A 55 °C 1857 A 25 °C @ 50Hz 15700 A @ 60Hz 16400 A @ 50Hz 1232 KA2s @ 60Hz 1125 KA2s 1200 to 2000 V 150 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t VDRM/VRRM tq typical TJ www.irf.com 1 ST700C..L Series Bulletin I25190 rev. D 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , max. repetitive VRSM , maximum non- IDRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = T J max V V mA 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 Type number ST700C..L 80 On-state Conduction Parameter I T(AV) ST700C..L Max. average on-state current @ Heatsink temperature 910 (355) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1857 I TSM Max. peak, one-cycle 15700 non-repetitive surge current 16400 2 I t 2 Maximum I t for fusing Units Conditions DC @ 25°C heatsink temperature double side cooled t = 10ms reapplied 13200 t = 10ms 100% VRRM 13800 t = 8.3ms reapplied Sinusoidal half wave, 1232 t = 10ms No voltage Initial TJ = TJ max. 1125 t = 8.3ms reapplied KA2s 795 I 2√ t Maximum I2 √t for fusing V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 12321 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. (I > π x IT(AV) ),TJ = TJ max. 1.13 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.40 High level value of on-state t = 10ms V Low level value of on-state slope resistance mΩ (I > π x IT(AV)),TJ = TJ max. 0.35 V TM Max. on-state voltage 1.80 IH Maximum holding current 600 IL Typical latching current 1000 2 KA2√s 1.00 slope resistance r t2 No voltage t = 8.3ms 871 A V mA I = 2000A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 Switching Parameter di/dt ST700C..L Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time 1.0 t Typical turn-off time 150 Units Conditions A/µs Gate current 1A, di g /dt = 1A/µs µs q Gate drive 20V, 20Ω, tr ≤ 1µs TJ = T J max, anode voltage ≤ 80% VDRM Vd = 0.67% VDRM, TJ = 25°C ITM = 750A, TJ = T J max, di/dt = 60A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p Blocking Parameter ST700C..L Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 80 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST700C..L Maximum peak gate power 2.0 IGM 3.0 Max. peak positive gate current +VGM Maximum peak positive Maximum peak negative TYP. DC gate voltage required to trigger IGD VGD A TJ = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms DC gate current not to trigger DC gate voltage not to trigger www.irf.com p p MAX. 200 - 100 200 50 - TJ = - 40°C DC gate current required to trigger p TJ = TJ max, f = 50Hz, d% = 50 5.0 gate voltage VGT W 20 gate voltage IGT TJ = TJ max, t ≤ 5ms 10.0 PG(AV) Maximum average gate power -VGM Units Conditions 2.5 - 1.8 3.0 1.1 10 0.25 mA TJ = 25°C TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST700C..L Series Bulletin I25190 rev. D 04/00 Thermal and Mechanical Specification Parameter ST700C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, Units °C 0.073 junction to heatsink DC operation single side cooled K/W 0.031 RthC-hs Max. thermal resistance, 0.011 case to heatsink 0.006 F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Case style Conditions K/W TO - 200AC (B-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 70 0 C 20 L 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 06 ) M AX . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 58 .5 (2.3 ) D I A. M AX . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 13 0 S T 7 0 0 C ..L Se rie s (S in gle S id e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K/ W 12 0 11 0 10 0 90 C o nd uctio n A ng le 80 70 30° 60° 60 90° 1 20° 50 180° 40 0 10 0 200 300 40 0 500 60 0 70 0 A v e r a g e O n -st a t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics www.irf.com M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) M a xim u m A llo w a b le He a t sin k T e m p e ra t u re (°C ) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 13 0 ST 7 0 0 C ..L S e r ie s (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K/ W 12 0 11 0 10 0 90 C on duc tio n Pe rio d 80 70 60 50 3 0° 40 60° 90° 30 120° 180° DC 20 0 20 0 4 00 60 0 800 1 00 0 A v e ra ge O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 5 ST700C..L Series 130 M a xim u m A llo w a b le H e a tsin k T e m p e r a tu re (° C ) M axim um Allo w able Heatsin k Tem perature (°C) Bulletin I25190 rev. D 04/00 ST700C..L Series (Double Side Cooled ) R thJ- hs (DC) = 0.031 K/W 120 110 100 90 C o nduc tio n A ng le 80 70 60 50 30° 40 60° 90° 30 120° 180° 20 0 200 400 600 800 1000 1200 1 30 ST 7 0 0 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 3 1 K / W 1 20 1 10 1 00 90 C o ndu ctio n Pe rio d 80 70 30 ° 60 90 ° 120° 40 18 0° 30 DC 20 0 400 180° 120° 90° 60° 30° RMS L im it 1200 C o ndu ct io n A ng le 800 ST700C..L Series T J = 125°C 400 0 0 400 600 800 1000 1 60 0 2 00 0 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RM S Lim it 1500 C o nd uc tio n Pe rio d 1000 ST700C..L Series T J = 125°C 500 0 1200 0 400 800 1200 1600 2000 Average On -state Curren t (A) Avera ge On -state Curren t (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 1 40 0 0 A t A n y R a t e d Lo a d C o n d itio n A n d W it h R a t e d V RRM A p p lie d F o llo w in g Su rg e . In it ia l TJ = 1 2 5 ° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 1 30 0 0 1 20 0 0 1 10 0 0 1 00 0 0 9 00 0 8 00 0 S T 7 0 0 C ..L S e rie s 7 00 0 6 00 0 1 6 200 Maxim um Average On-state Power Loss (W ) 2800 1600 1 2 00 Fig. 4 - Current Ratings Characteristics 10 100 P e a k H a lf Sin e W a v e O n - sta t e C ur re n t (A ) P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) Maxim um Average On -state Pow er Loss (W ) Fig. 3 - Current Ratings Characteristics 2000 8 00 A v e r a g e O n -st a te C urre n t (A ) Average O n-sta te Current (A) 2400 60° 50 16000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l O f C o n d u c t io n M a y N o t Be M a in ta in e d . 14000 In it ia l T J = 1 2 5 ° C N o V o lta g e Re a p p lie d 13000 Ra t e d V RRM R e a p p lie d 12000 15000 11000 10000 9000 8000 7000 ST 7 0 0 C ..L Se rie s 6000 0.01 0.1 1 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) P u lse T ra in D u ra tio n (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 In st an t an e o u s O n -st a te C u rre n t ( A ) 1 0 0 00 TJ = 2 5 ° C T J = 1 2 5 °C 1 00 0 S T7 0 0 C ..L S e rie s 10 0 0 .5 1 1 .5 2 2 .5 3 3 .5 4 In sta n t a n e o u s O n - st a te V o lt a g e ( V ) Tra n sie n t Th e rm al Im pe da n ce Z thJ-hs ( K/ W ) Fig. 9 - On-state Voltage Drop Characteristics 0 .1 ST 7 0 0 C ..L Se rie s 0 .0 1 St e a d y St a t e V a lu e R thJ-hs = 0 .0 7 3 K / W ( Sin gle Sid e C o o le d ) R thJ-hs = 0 .0 3 1 K / W ( D o u ble Sid e C o o le d ) ( D C O p e rat io n ) 0 .0 0 1 0 .0 0 1 0. 01 0 .1 1 10 Sq u a re W a v e P ulse D ur at io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics R e c t a n g ula r g a t e p ulse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra t e d d i/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 µs (1) (2) (3) (4) PGM PGM PGM PG M = = = = 10W , 20W , 40W , 60W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s (a ) (b ) Tj=-40 °C 1 Tj=2 5 °C Tj=125 °C In sta n t a n e o u s G at e V o lta g e ( V ) 100 (1) (2) (3) (4) VG D IG D 0. 1 0 .0 0 1 0 .0 1 Fre q u e n c y L im ite d b y P G ( A V ) D e v ic e : ST 7 0 0 C ..L S e rie s 0 .1 1 10 1 00 In sta n t a n e o u s G a te C u rre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7