IRF SD603C04S10C

Bulletin I2068 rev. C 04/00
SD603C..C SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
600A
1.0 to 2.0 µs recovery time
High voltage ratings up to 2200V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC B-43
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
case style B-43
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
SD603C..C
Units
600
A
55
°C
942
A
25
°C
@ 50Hz
8320
A
@ 60Hz
8715
A
@ 50Hz
346
KA2s
@ 60Hz
316
KA2s
VRRM range
400 to 2200
V
trr
1.0 to 2.0
µs
25
°C
IF(AV)
@ T hs
IF(RMS)
@ T hs
IFSM
2
It
range
@ TJ
TJ
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- 40 to 125
°C
1
SD603C..C Series
Bulletin I2068 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
400
500
SD603C..S10C
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
22
2200
2300
SD603C..S15C
SD603C..S20C
V RRM max. repetitive
peak and off-state voltage
V
VRSM , maximum nonrepetitive peak voltage
V
I RRM max.
TJ = 125°C
mA
45
Forward Conduction
Parameter
IF(AV)
SD603C..C
Max. average forward current
@ Heatsink temperature
A
180° conduction, half sine wave.
55(75)
°C
Double side (single side) cooled
942
A
I2 √t
@ 25°C heatsink temperature double side cooled
Max. peak, one-cycle
8320
t = 10ms
non-repetitive forward current
8715
t = 8.3ms
reapplied
t = 10ms
100% VRRM
7330
t = 8.3ms
reapplied
Sinusoidal half wave,
346
t = 10ms
No voltage
Initial TJ = TJ max.
316
t = 8.3ms
reapplied
A
7000
I2 t
Conditions
600(300)
IF(RMS) Max. RMS current
IFSM
Units
2
Maximum I t for fusing
Maximum I2√t for fusing
KA2s
No voltage
245
t = 10ms
100% VRRM
224
t = 8.3ms
reapplied
KA2√s
3460
V F(TO)1 Low level of threshold voltage
1.36
V F(TO)2 High level of threshold voltage
1.81
r f1
Low level of forward slope resistance
0.87
r f2
High level of forward slope resistance
0.67
VFM
Max. forward voltage
2.97
V
mΩ
V
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
Ipk= 1885A, T J = 25°C, tp = 10ms sinusoidal wave
Recovery Characteristics
Code
Test conditions
TJ = 25 oC
typical t
rr
I
pk
di/dt
Max. values @ TJ = 125 °C
V
r
@ 25% I RRM Square Pulse
(µs)
2
S10
1.0
S15
1.5
S20
2.0
t
rr
Q
rr
I
rr
@ 25% IRRM
(A)
(A/µs)
(V)
(µs)
(µC)
(A)
2.0
45
34
1000
25
-30
3.2
87
51
3.5
97
55
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SD603C..C Series
Bulletin I2068 rev. C 04/00
Thermal and Mechanical Specifications
Parameter
SD603C..C
TJ
Max. operating temperature range
-40 to 125
Tstg
Max. storage temperature range
-40 to 150
RthJ-hs Max. thermal resistance,
Units
°C
0.076
K/W
junction to heatsink
0.038
F
Mounting force, ± 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
83
g
Case style
Conditions
DC operation single side cooled
DC operation double side cooled
B-43
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Single Side Double Side
Single Side Double Side
180°
0.006
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
60°
0.015
0.015
0.016
0.015
30°
0.026
0.025
0.026
0.025
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
SD
60
3
C
1
2
3
4
22 S20
5
6
1
-
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V RRM (see Voltage Ratings table)
6
-
t rr code (see Recovery Characteristics table)
7
-
C = Puk Case B-43
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C
7
Diode
3
SD603C..C Series
Bulletin I2068 rev. C 04/00
Outline Table
4 2 (1 .65 ) D IA. M A X .
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
0.8(0.03) MIN.
25.3 (1) DIA. MAX.
TWO PLACES
15.4 ( 0.61)
14.4 ( 0.57)
BOTH ENDS
Conform to JEDEC B-43
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
4
130
SD 6 0 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R th J-hs (D C ) = 0 .0 7 6 K / W
120
110
Co n duc tio n A ng le
100
90
80
3 0°
6 0°
18 0°
9 0°
120 °
70
0
50
1 00
1 50
200
25 0
3 00
3 50
Maximum Allowable Heatsink Temperature (°C)
M a xim u m A llo w a b le H e a tsin k Te m p e ra t ure (° C )
40.5 (1.59) DIA. MAX.
130
SD 603C..C Series
(Single Side Cooled)
R thJ-h s (DC) = 0.076 K/W
120
110
100
C o nd uc tio n Pe rio d
90
30°
80
60°
90°
120°
70
180°
60
0
100
200
300
DC
400
A v e r a g e F o rw a rd C u rre n t (A )
Averag e Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
500
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SD603C..C Series
SD603C..C Series
(Double Side Cooled)
R th J- hs (DC) = 0.038 K/W
120
110
100
C o nd uc tio n A ng le
90
80
70
30°
60
120°
180°
50
100
200
300
400
500
600
700
1400
1200
RMS Lim it
1000
800
600
Co n duc tio n An gle
400
SD603C..C Series
TJ = 125°C
200
0
100
200
300
400
500
30° 60°
70
90°
120°
60
180 °
50
DC
40
0
200
40 0
60 0
8 00
1 0 00
2500
DC
180°
120°
90°
60°
30°
2000
1500
RMS Lim it
1000
C o ndu ctio n P e rio d
500
SD603C..C Series
TJ = 125°C
0
0
200
400
600
800
1000
Averag e Forw ard Current (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
5 5 00
5 0 00
4 5 00
4 0 00
SD 6 0 3 C ..C S e rie s
3 0 00
80
Average Forw ard C urren t (A)
6 0 00
3 5 00
Co nd uc tio n Pe rio d
90
600
A t A n y R a te d Lo a d C o n d itio n a n d W it h
R a t e d V RRM A p p lie d F o llo w in g S u rg e .
In it ia l TJ = 1 2 5 ° C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
6 5 00
10 0
A v e ra g e Fo rw a rd C u rre n t (A )
1600
7 0 00
11 0
Fig. 4 - Current Ratings Characteristics
180°
120°
90°
60°
30°
7 5 00
SD 6 0 3 C ..C S e r ie s
(D o u b le Sid e C o o le d )
R th J-hs (D C ) = 0 .0 3 8 K / W
12 0
Average Forward Curren t (A)
1800
8 0 00
13 0
Fig. 3 - Current Ratings Characteristics
Maxim um Average Forward Power Loss (W)
0
0
P e a k H a lf Sin e W av e Fo rw ard C u rre n t (A )
60° 90°
M a x im u m A llo w a b le H e a t sin k Te m p e ra t u re (°C )
130
2 5 00
1
10
100
Num ber o f Eq ual Am plitude Ha lf C yc le Cu rre nt Pu lses ( N)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
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P e ak H a lf Sin e W a v e Fo rw a rd C u rr e n t (A )
Maxim um Average Forward Pow er Loss (W)
Maxim um Allowable Heatsin k Tem perature ( °C)
Bulletin I2068 rev. C 04/00
9000
8000
7000
M a x im u m N o n Re p e t itiv e S u rg e C u rre n t
V e rsu s P u lse Tra in D u ra t io n .
In itia l TJ = 1 2 5 °C
N o V o lta g e R e a p p lie d
R a t e d V RR M R e a p p lie d
6000
5000
4000
S D 6 0 3 C ..C S e rie s
3000
2000
0.01
0.1
1
Pu lse T ra in D u ra tio n (s)
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
5
SD603C..C Series
Bulletin I2068 rev. C 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )
In sta nta n e o us Fo rw ard C urre nt ( A )
1 0 00 0
1 0 00
T J = 2 5 °C
T J = 1 2 5 °C
100
SD 6 0 3C ..C S e rie s
10
.5
1 .5
2 .5
3 .5
4 .5
5 .5
6 .5
7 .5
8 .5
0 .1
S D 6 0 3 C ..C Se rie s
0 .0 1
St e a d y St a te V a lu e :
R th J- hs = 0 .0 7 6 K / W
(Sin g le S id e C o o le d )
R th J-hs = 0 .0 3 8 K / W
(D o ub le Sid e C o o le d )
(D C O p e ra t io n )
0 .0 0 1
0 .0 0 1
0 .0 1
In st an ta n e o u s Fo rw ard V o lta ge ( V )
0 .1
1
10
10 0
Sq u a re W a v e P u lse D ura t io n (s)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
1 00
V
FP
Fo rw a rd R e c o v e ry ( V )
80
I
T = 1 2 5 °C
J
60
T J = 2 5 °C
40
20
SD 6 0 3 C ..S2 0 C Se rie s
0
0
2 00
4 00
60 0
800
1 00 0
120 0
1 40 0
16 0 0
18 00
200 0
R a te O ff R ise O f Fo rw ar d C urre n t d i/ d t ( A / use c )
SD6 03C..S10C Series
T J = 1 25 °C; V r = 30 V
2 .1
I FM = 1 00 0 A
Squa re Pu lse
2
1 .9
5 00 A
1 .8
25 0 A
1 .7
1 .6
10
10 0
130
120
I FM = 1 000 A
Squ are Pulse
110
100
5 00 A
90
80
2 50 A
70
60
50
40
30
S D 6 0 3 C ..S1 0 C S e rie s
TJ = 125 ° C; V r = 30V
20
10 20 30 40 50 6 0 7 0 8 0 9 0 100
M aximum Reverse Recovery Current - Ir r (A)
2 .2
M a x im um R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
M aximum Reverse Recovery Time - T rr (µs)
Fig. 11 - Typical Forward Recovery Characteristics
1 20
1 10
1 00
90
80
I FM = 10 00 A
Squa re P ulse
50 0 A
250 A
70
60
50
40
30
20
SD 603C..S1 0C Ser ies
TJ = 1 25 °C; V r = 30 V
10
10 20 30 40 5 0 60 70 80 9 0 10 0
Rate O f Fall O f Fo rwa rd Cu rren t - di/dt (A /µs)
Rate O f Fall O f Fo rw ard C urre nt - di/d t (A/µs)
R ate O f Fall O f Fo rward Curre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
6
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SD603C..C Series
3 .5
I FM = 1 00 0 A
Sq uare Pu lse
3
5 00 A
2 .5
25 0 A
2
10
100
Ra te O f Fa ll O f Fo rw a rd Cu rre nt - di/d t (A /µs)
4 .5
S D 6 0 3 C ..S 2 0 C Se rie s
T J = 1 2 5 °C ; V r = 3 0 V
4
I FM = 1 00 0 A
3 .5
Squa re Pulse
3
50 0 A
2 .5
2 50 A
2
10
100
Ra te O f Fa ll O f Forw ard C urre nt - di/dt (A /µs)
Fig. 18 - Recovery Time Characteristics
160
140
50 0 A
120
2 50 A
100
80
SD 6 0 3C ..S 1 5 C Se rie s
TJ = 12 5 ° C ; V r = 30V
60
40
1 0 20 3 0 40 50 60 7 0 80 90 100
1 40
I FM = 1 00 0 A
1 30
Squ are Pu lse
1 20
1 10
1 00
5 00 A
90
80
250 A
70
60
50
SD 6 0 3 C ..S 1 5 C Se rie s
T J = 1 2 5 °C ; V r = 3 0 V
40
30
20
10 20 30 40 5 0 60 70 80 90 100
R ate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Rate O f Fa ll O f Fo rw ard Current - d i/dt (A /µs)
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC )
M a xim u m R e v e rse Re c o v e ry Tim e - Trr ( µ s)
Fig. 15 - Recovery Time Characteristics
I FM = 1 00 0 A
Squa re Pulse
180
M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr ( A )
SD6 03C..S15C Series
T J = 1 25 °C; V r = 30V
200
200
180
I FM = 1 000 A
Squ are Pulse
160
140
5 00 A
120
100
250 A
80
60
S D 6 0 3 C ..S2 0 C Se rie s
T J = 1 2 5 °C ; V r = 3 0 V
40
10 20 30 40 50 60 70 80 90 100
M aximum Reverse Recov ery Current - Irr (A)
4
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µ C )
Maxim um Reverse Recovery Time - Trr (µs)
Bulletin I2068 rev. C 04/00
1 50
1 40
I FM = 1 000 A
1 30
Sq uare Pulse
1 20
1 10
5 00 A
1 00
90
80
250 A
70
60
50
SD6 03C..S2 0C Series
T J = 1 25 °C; V r = 30V
40
30
20
10 20 30 40 5 0 60 70 80 9 0 10 0
Rate O f Fall O f Forwa rd C urre nt - di/d t (A/µs)
R ate O f Fall O f Fo rward Curre nt - di/dt (A /µs)
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
1 E4
10
2 0 jo ule s pe r pulse
20 jo ule s per p ulse
P e a k Fo rw a rd C u rre n t (A )
4
1
10
4
2
1
0.4
1 E3
2
0. 4
0.2
0.1
0.2
0. 04
0. 1
0 .02
1 E2
0.0 1
tp
1 E1
1 E1
SD 6 0 3 C..S10 C Se ries
Sin uso id al Pul se
T J = 1 2 5 °C, V RRM = 11 20 V
d v/ d t = 10 0 0 V/ µ s
1E 2
tp
1E3
Pu lse Ba se w id t h (µ s)
1 E14E 41 E11E 1
SD 6 0 3 C..S1 0 C Se rie s
Trap ezo ida l Pul se
T J = 1 2 5 °C , VR R M = 1 1 2 0 V
d v/ dt = 10 0 0 V/ µ s; di/ dt=5 0A / µs
1 E2
1 E3
1 E4
P ulse Ba se w id t h (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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7
SD603C..C Series
Bulletin I2068 rev. C 04/00
1E 4
2 0 jo ule s p er pulse
2 0 jo ules pe r pulse
P e a k Fo rw ard C u rre n t (A )
10
2
10
4
4
1
1E 3
2
0.4
0. 2
1
0.4
0 .1
0. 04
0.2
0.0 2
1E 2
tp
1E 1
1E1
SD6 0 3 C..S1 5 C Se ries
Sinu soi dal Pu lse
T J = 1 2 5 °C, V RRM = 1 7 6 0 V
dv / dt = 1 0 0 0 V/ µs
1 E2
tp
1 E3
1 E14E 41 E11E 1
SD 6 0 3C ..S15 C Se ries
Tra pezo id al Pu lse
T J = 1 2 5 °C , V RRM = 1 7 6 0V
d v /dt = 1 0 00 V /µ s; di/ dt=5 0 A / µs
1 E2
P u lse B ase w id t h (µ s)
1 E3
1 E4
P u lse B a se w id t h (µ s)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E 4
2 0 jo ules pe r p ulse
20 jo ules pe r pulse
Pe a k Fo rw a rd C urr e n t ( A )
10
10
4
4
2
2
1E 3
1
1
0 .4
0 .4
0 .2
0.1
1E 2
0. 04
tp
1E 1
1 E1
SD 6 03 C..S2 0 C Se ri es
Sin u so id al Pu lse
TJ = 1 2 5 °C , VRRM = 1 7 60 V
dv / dt = 1 0 0 0 V/ µs
1E2
1E3
P ulse Ba se w id t h ( µ s)
tp
1 E14E 41 E11E 1
SD 6 03 C ..S20 C Seri es
Trap ez o idal Pu lse
T J = 1 2 5 °C , V RRM = 1 7 6 0 V
dv /dt = 10 0 0 V/ µ s; di/ dt= 50 A / µs
1E2
1E3
1E4
P u lse B a se w id t h ( µ s)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
8
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