IRF 30SLJQ030

PD - 93966
SCHOTTKY RECTIFIER
30SLJQ030
HIGH EFFICIENCY SERIES
30 Amp, 30V
Major Ratings and Characteristics
Characteristics
Description/Features
30SLJQ030 Units
IF(AV)
30
A
VRRM
30
V
IFSM @ tp = 8.3ms half-sine
150
A
VF @ 30Apk, TJ =125°C
0.57
V
TJ, Tstg Operating and storage -55 to 150
°C
The 30SLJQ030 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full
MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
•
•
•
•
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-0.5
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10/03/00
30SLJQ030
Voltage Ratings
Part number
VR
30SLJQ030
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
Limits
Units
30
A
50% duty cycle @ TC = 105°C, square waveform
Conditions
150
A
@ tp = 8.3 ms half-sine
Limits
Units
0.58
V
@ 15A
See Fig. 5
IFSM
Max. Peak One Cycle Non - Repetitive
Surge Current
Electrical Specifications
Parameters
VFM
Max. Forward Voltage Drop
See Fig. 1
I RM
Conditions
0.61
V
@ 20A
0.67
V
@ 30A
0.51
V
@ 15A
0.55
V
@ 20A
0.62
V
@ 30A
0.41
V
@ 15A
0.47
V
@ 20A
0.57
V
@ 30A
TJ = -55°C ‚
TJ = 25°C ‚
TJ = 125°C ‚
Max. Reverse Leakage Current
1.0
mA
TJ = 25°C
See Fig. 2
75
mA
TJ = 100°C
150
mA
TJ = 125°C
VR = 5VDC ( 1MHz, 25°C ) ‚
CT
Max. Junction Capacitance
2000
pF
LS
Typical Series Inductance
4.8
nH
VR = rated VR ‚
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
Limits Units
TJ
Max.Junction Temperature Range
-55 to 150
Tstg
Max. Storage Temperature Range
-55 to 150
°C
1.6
°C/W
RthJC Max. Thermal Resistance, Junction
Conditions
°C
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
Die Size (Typical)
Case Style
1.0
115X170
g
mils
SMD-0.5
 Pulse Width < 300µs, Duty Cycle < 2%
‚ Pins 2 and 3 externally tied together
2
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30SLJQ030
1000
Reverse Current - I R ( mA )
100
100
125°C
100°C
10
75°C
1
25°C
0.1
0.01
10
20
30
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
Tj = 125°C
10000
Tj = 25°C
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V F (V)
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
0
T J = 25°C
1000
100
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
10
20
30
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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30SLJQ030
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Allowable Case Temprature - (°C)
180
160
30SLJQ030
140
R thJC = 1.6°C/W
120
DC
100
80
60
40
20
0
0
10
20
30
40
50
60
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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Data and specifications subject to change without notice. 10/00
4
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