IRF AUIRF7648M2TR1

PD - 96317A
AUTOMOTIVE GRADE
AUIRF7648M2TR
AUIRF7648M2TR1
DirectFET™ Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
max.
ID (Silicon Limited)
Qg
D
SC
M2
S
S
S
S
G
D
DirectFET™ ISOMETRIC
M4
Applicable DirectFET Outline and Substrate Outline 
SB
60V
5.5mΩ
7.0mΩ
68A
35nC
M4
L4
L6
L8
Description
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to
achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7648M2 to offer substantial system level savings and performance
improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this
MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET
a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Max.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
TP
TJ
TSTG
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
RθJ-Can
Junction-to-Can
RθJ-PCB
Junction-to-PCB Mounted
IAR
EAR
f
e
g
h
g
g
h
Units
60
± 20
68
48
14
179
272
63
2.5
70
291
See Fig. 18a,18b,16,17
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
Thermal Resistance
fl
e
j
k
Linear Derating Factor
Parameter
f
Typ.
Max.
–––
60
12.5
–––
20
–––
–––
2.4
1.0
–––
0.42
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
09/03/10
AUIRF7648M2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
60
–––
–––
0.07
–––
–––
–––
3.0
–––
44
–––
–––
–––
–––
–––
5.5
4.0
-12
–––
1.4
–––
–––
–––
–––
7.0
4.9
–––
–––
–––
5
250
100
-100
Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 41A
V
VDS = VGS, ID = 150µA
mV/°C
VDS = 25V, ID = 41A
S
i
Ω
µA
nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
35
7.7
3.4
14
9.9
17.4
23
12
23
19
14
2170
633
162
2661
465
726
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
nC
See Fig.11
nC
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 10V
ID = 41A
RG = 6.8Ω
ns
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
ƒ Surface mounted on 1 in. square Cu
(still air).
Min.
Typ.
Max.
–––
–––
68
–––
–––
272
–––
–––
–––
–––
36
46
1.3
54
69
‰ Mounted to a PCB with small
clip heatsink (still air)
i
VGS = 0V
VDS = 25V
pF
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
IS
Conditions
VDS = 30V, VGS = 10V
ID = 41A
Units
A
V
ns
nC
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 48V, f=1.0MHz
VGS = 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS = 41A, VGS = 0V
IF = 41A, VDD = 25V
di/dt = 100A/µs
i
D
G
S
i
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes  through Š are on page 10
2
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AUIRF7648M2TR/TR1
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
††
Human Body Model
Charged Device
Model
MEDIUM-CAN
MSL1, 260°C
Class M4 ( > 400V)
AEC-Q101-002
Class H2( ≤ 4000V)
AEC-Q101-001
Class C4( ≤ 1000V)
AEC-Q101-005
RoHS Compliant
Yes
†
http://www.irf.com
Qualification standards can be found at International Rectifier’s web site:
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7648M2TR/TR1
1000
1000
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
5.5V
100
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
14
ID = 41A
12
10
T J = 125°C
6
4
T J = 25°C
2
4
6
8
10
12
14
16
18
T J = 125°C
10.0
8.0
6.0
T J = 25°C
4.0
Vgs = 10V
2.0
20
0
50
100
150
200
ID, Drain Current (A)
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.2
VDS = 25V
≤60µs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
12.0
VGS, Gate -to -Source Voltage (V)
100
T J = -40°C
TJ = 25°C
TJ = 175°C
10
1.0
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
10
Fig 2. Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
Fig 1. Typical Output Characteristics
8
1
V DS, Drain-to-Source Voltage (V)
10
2.0
ID = 41A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7648M2TR/TR1
5.5
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
1000
4.5
3.5
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 150µA
2.5
T J = -40°C
100
TJ = 25°C
TJ = 175°C
10
VGS = 0V
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
0.2
T J , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
100000
T J = 25°C
1.0
1.2
C oss = C ds + C gd
80
60
T J = 175°C
40
10000
Ciss
Coss
1000
V DS = 6V
Crss
380µs PULSE WIDTH
0
100
0
20
40
60
80
100
120
1
ID,Drain-to-Source Current (A)
12
75
VDS= 48V
VDS= 30V
60
VDS= 12V
ID, Drain Current (A)
10
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14
ID= 41A
10
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Forward Transconductance Vs. Drain Current
VGS, Gate-to-Source Voltage (V)
0.8
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
100
20
0.6
Fig 8. Typical Source-Drain Diode Forward Voltage
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
120
0.4
VSD, Source-to-Drain Voltage (V)
8
6
4
45
30
15
2
0
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
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0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
5
AUIRF7648M2TR/TR1
300
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10
1msec
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
ID
8.5A
18A
BOTTOM 41A
TOP
250
200
150
100
50
0
0.10
1
10
100
25
VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.02
0.01
0.05
0.1
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
0.0001
τ3
τ3
τ4
τ4
τ
τi (sec)
0.07641
0.000021
0.36635
0.000737
0.94890 0.039150
1.00767 0.007321
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
ID, Drain-to-Source Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7648M2TR/TR1
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 41A
EAR , Avalanche Energy (mJ)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 15)
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
- VDD
IAS
tp
A
0.01Ω
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
VCC
DUT
0
20K
1K
Vgs
S
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
Qgodr
RD
Qgd
Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
D.U.T.
VDS
+
-
V DD
90%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
VGS
td(on)
Fig 20a. Switching Time Test Circuit
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tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRF7648M2TR/TR1
DirectFET™ Board Footprint, M4 (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
S
S
S
S
G
D
8
D
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AUIRF7648M2TR/TR1
DirectFET™ Outline Dimension, M4 Outline (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.78 0.82
0.78 0.82
0.78 0.82
0.38 0.42
1.10 1.20
2.30 2.40
3.50 3.60
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MAX
MIN
0.246 0.250
0.189 0.201
0.152 0.156
0.014 0.018
0.023 0.024
0.031 0.032
0.031 0.032
0.031 0.032
0.015 0.017
0.043 0.047
0.090 0.094
0.138 0.142
0.027 0.029
0.003 0.007
0.001 0.003
DirectFET™ Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7648M2TR/TR1
DirectFET™ Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
H
A
G
F
C
D
E
B
A
D
C
B
F
H
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
G
DIMENSIONS
METRIC
IMPERIAL
MIN
MAX
MIN
MAX
0.311
0.319
8.10
7.90
0.154
4.10
3.90
0.161
0.469
0.484
12.30
11.90
0.215
5.55
5.45
0.219
0.201
5.30
5.10
0.209
0.256
6.50
0.264
6.70
0.059
N.C
1.50
N.C
0.059
1.50
1.60
0.063
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
10
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF7648M2TR). For 1000 parts on 7"
reel, order AUIRF7648M2TR1
REEL DIMENSIONS
TR1 OPTION
STANDARD OPTION (QTY 4800)
IMPERIAL
METRIC
METRIC
CODE
MIN
MIN
MAX
MAX
MAX
MIN
12.992 N.C
330.0
A
177.77 N.C
N.C
B
0.795
20.2
N.C
19.06
N.C
N.C
C
0.504
12.8
13.2
0.520
12.8
13.5
D
0.059
1.5
1.5
N.C
N.C
N.C
3.937
E
100.0
58.72
N.C
N.C
N.C
F
N.C
N.C
0.724
N.C
18.4
13.50
G
0.488
12.4
11.9
14.4
0.567
12.01
H
0.469
11.9
0.606
11.9
15.4
12.01
(QTY 1000)
IMPERIAL
MIN
MAX
6.9
N.C
0.75
N.C
0.53
0.50
0.059
N.C
2.31
N.C
N.C
0.53
0.47
N.C
0.47
N.C
† Starting TJ = 25°C, L = 0.084mH, RG = 50Ω, IAS = 41A,Vgs = 20V.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ˆ Used double sided cooling, mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Š Rθ is measured at TJ of approximately 90°C.
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AUIRF7648M2TR/TR1
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right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
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specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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