BSO203SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) VDS -20 V RDS(on) 21 mΩ ID -9 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7 D S 3 6 D G 4 5 D Top View Type Package Ordering Code BSO203SP SO 8 Q67042-S4083 SIS00062 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -9 TA=70°C -7.2 ID puls -36 EAS 97 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2.35 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-9 A , VDD=-10V, RGS =25Ω Reverse diode dv/dt IS =-9A, VDS=-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2004-06-03 BSO203SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 35 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 53 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-100µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 22.3 34 mΩ RDS(on) - 12.9 21 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-7.1A Drain-source on-state resistance VGS =-4.5V, ID =-9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2004-06-03 BSO203SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 16 33 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-7.2A Input capacitance Ciss VGS =0, VDS =-15V, - 2265 - Output capacitance Coss f=1MHz - 890 - Reverse transfer capacitance Crss - 728 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 15.6 23 Rise time tr ID =-1A, RG=6Ω - 27 40 Turn-off delay time td(off) - 58 77 Fall time tf - 69 104 - -3.8 -5.7 - -15.6 -23.4 - -33.6 -50.4 V(plateau) VDD =-15V, ID =-9A - -1.6 - V IS - - -3 A - - -36 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-15V, ID =-9A VDD =-15V, ID =-9A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.82 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 34 42 ns Reverse recovery charge Qrr diF /dt=100A/µs - 16.7 21 nC Page 3 -1.25 V 2004-06-03 BSO203SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 2.6 BSO203SP -10 W BSO203SP A 2.2 -8 2 -7 ID Ptot 1.8 1.6 -6 1.4 -5 1.2 1 -4 0.8 -3 0.6 -2 0.4 -1 0.2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 2 BSO203SP D 10 2 BSO203SP K/W /I DS V = A 160 TA 3 Safe operating area -10 °C tp = 120.0µs R DS ( on ) 10 1 ID Z thJS 1 ms -10 1 10 0 10 -1 10 ms D = 0.50 0.20 -10 0 10 -2 0.10 0.05 0.02 10 -3 0.01 single pulse -10 -1 -1 -10 -10 0 DC 1 -10 V -10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Page 4 2004-06-03 0 BSO203SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.05 90 Vgs = -3.5V A Vgs = -2.5V Vgs = -3V Ω Vgs = -3V 60 RDS(on) - ID 70 Vgs = -4V Vgs = -4.5V Vgs = -7V Vgs = -10V 50 0.03 Vgs = -2.5V 40 0.02 30 20 Vgs = -2V Vgs= - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs= - 7V Vgs = - 10V 0.01 10 0 0 2 4 6 0 0 10 V 10 20 30 40 50 60 A - V DS 80 - ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 35 60 A S - ID g fs 25 40 20 30 15 20 10 10 5 0 0 0.5 1 1.5 2 V 0 0 3 - V GS 5 10 15 20 25 35 A - ID Page 5 2004-06-03 BSO203SP Preliminary data 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -9 A, VGS = -4.5 V parameter: VGS = VDS 30 1.5 V 98% - VGS(th) RDS(on) mΩ 20 typ. 98% 1 0.75 typ. 15 0.5 2% 10 0.25 5 -60 -20 20 60 100 0 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO203SP A pF C iss C IF -10 1 Coss 10 3 -10 0 C rss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 V 15 - V DS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2004-06-03 BSO203SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -9 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -9 A pulsed 100 12 V mJ 10 80 - VGS E AS 9 70 60 8 7 50 6 40 5 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 4 30 3 20 2 10 1 0 25 50 75 100 150 °C Tj 0 0 10 20 30 40 nC 60 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO203SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2004-06-03 Preliminary data BSO203SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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