PD - 94179A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y3205CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3205CM 55V RDS(on) 0.022Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 18* 18* 72 100 0.8 ±20 634 18 10 2.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 5/25/01 IRF5Y3205CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 55 — — V VGS = 0V, ID = 250µA — 0.056 — V/°C Reference to 25°C, ID = 1.0mA — — 0.022 Ω 2.0 18 — — — — — — 4.0 — 25 250 V S( ) VGS = 10V, ID = 18A ➃ VDS = VGS, ID = 250µA VDS = 15V, IDS = 18A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 170 32 74 22 80 70 55 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3660 1200 440 — — — nA nC VDD = 28V, ID = 18A, VGS =10V, RG = 2.5Ω ns Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) nH pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 18* 72 1.3 130 410 Test Conditions A V ns nC Tj = 25°C, IS = 18A, VGS = 0V ➃ Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.25 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5Y3205CM 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 4.5V 10 20µs PULSE WIDTH T = 25 C 1 10 10 2.0 V DS = 25V 20µs PULSE WIDTH 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 15 www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5.5 ° J 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 20µs PULSE WIDTH T = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 4.5 4.5V ° J 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 18A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5Y3205CM VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 C rss 1000 ID = 18A 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 0 100 40 80 120 160 200 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) TJ = 150 ° C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 44V VDS = 27V VDS = 11V 16 0 ISD , Reverse Drain Current (A) C, Capacitance (pF) 6000 20 VGS , Gate-to-Source Voltage (V) 7000 2.2 1ms 10 10ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5Y3205CM 60 LIMITED BY PACKAGE VGS 50 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5Y3205CM 15V EAS , Single Pulse Avalanche Energy (mJ) 1600 ID 8.0A 11.4A BOTTOM 18A TOP 1200 L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A 800 400 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5Y3205CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 18A, di/dt ≤ 230 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 3.9mH Peak IAS = 18A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 100V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/01 www.irf.com 7