IRF IRAM136

PD-97324 RevA
IRAM136-1060BS
Series
10A, 600V
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-1060BS is a 10A, 600V Integrated Power Hybrid IC designed for advanced
Appliance Motor Drives applications. Typical applications include energy efficient Washing Machine, Fans,
Air Conditions and Refrigerator Compressor Drivers. This module offers an extremely compact, high
performance AC motor-driver in an isolated package that simplifies design. Several built-in protection
features such as over current, temperature monitoring, shoot through prevention and under voltage lockout
makes this a very robust solution. The combination of highly efficient Trench IGBT technology and the
industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and a fully isolated thermally enhanced
package makes this a highly competitive solution. The compact Single in line (SIP05) package minimizes
PCB space.
Features
x
x
x
x
x
x
x
x
x
x
x
Internal Shunt Resistor and current feedback
Integrated gate drivers and bootstrap diodes
Temperature feedback
Programmable over current protection pin
High efficiency Trench IGBT technology
Under-voltage lockout for all channels
Matched propagation delay for all channels
3.3V/5V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor Power range 0.25~0.75kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
600
V+
Io @ TC=25°C
Positive Bus Input Voltage
450
RMS Phase Current (Note 1)
10
Io @ TC=100°C
RMS Phase Current (Note 1)
5
Ipk
Maximum Peak Phase Current (Note 2)
13
Fp
Maximum PWM Carrier Frequency
20
Pd
Maximum Power dissipation per IGBT @ TC =25°C
25
W
VRMS
VISO
Isolation Voltage (1min)
2000
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
+150
TC
Operating Case Temperature Range
-20 to +100
TSTG
Storage Temperature Range
-40 to +125
T
Mounting torque Range (M3 screw)
0.8 to 1.0
V
A
kHz
°C
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, TC=25°C, FPWM=16kHz.
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1
IRAM136-1060BS
Internal Electrical Schematic – IRAM136-1060BS
V+ (13)
Q1
D1
Q2
D2
Q3
D3
Q4
D4
Q5
D5
Q6
D6
V- (16)
R1
VB1 (9)
C1
R3
R2
U, VS1 (10)
VB2 (5)
C2
V, VS2 (6)
VB3 (1)
C3
R4
R5
R6
W, VS3 (2)
D7
D8
D9
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
24 HO1
R13
25 VB1
LO2 15
1 VCC
HIN1 (17)
2 HIN1
HIN2 (18)
3 HIN2
HIN3 (19)
4 HIN3
LIN1 (20)
Driver IC
LO3 14
LIN1 LIN2 LIN3
6
7
5
F ITRIP EN RCIN VSS
8
9
10 11 12
COM 13
LIN2 (21)
LIN3 (22)
FLT/EN (23)
R8
I_FB (24)
VCC
ISD
RCIN
VTH
(25)
(27)
(28)
(29)
R10
R9
R12
C6
C7
C4
VSS (26)
2
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IRAM136-1060BS
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
PBR Peak
Units Conditions
Bootstrap Resistor Peak Power
(Single Pulse)
---
15.0
W
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 25
VB1,2,3 +0.3
V
VB1,2,3
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, ITrip
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
tP=100μs, TC =100°C
ESR / ERJ series
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
V(BR)CES / T
Temperature Coeff. Of
Breakdown Voltage
---
0.3
---
V/°C
VCE(ON)
Collector-to-Emitter Saturation
Voltage
ICES
Zero Gate Voltage Collector
Current
VFM
Diode Forward Voltage Drop
VBDFM
Bootstrap Diode Forward Voltage
Drop
---
1.5
1.7
---
1.7
---
---
5
80
---
80
---
--
1.8
2.35
---
1.45
---
--
1.2
---
Units Conditions
V
A
V
V
VIN=0V, IC=250μA
VIN=0V, IC=250μA
(25°C - 150°C)
IC=5A, TJ=25°C
IC=5A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=5A
IF=5A, TJ=150°C
IF=1A
RBR
Bootstrap Resistor Value
---
22
---
TJ=25°C
RBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
TJ=25°C
IBUS_TRIP
Current Protection Threshold
(positive going)
---
9
---
---
7
---
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A
ISD=Vss. See fig. 2 and fig. 11b
ISD=Open. See fig. 2 and fig. 11b
3
IRAM136-1060BS
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
Typ
Max
---
240
400
Units Conditions
EON
Turn-On Switching Loss
EOFF
Turn-Off Switching Loss
---
65
90
ETOT
Total Switching Loss
---
305
490
EREC
Diode Reverse Recovery energy
---
15
25
tRR
Diode Reverse Recovery time
---
115
---
EON
Turn-on Switching Loss
---
330
---
EOFF
Turn-off Switching Loss
---
105
---
ETOT
Total Switching Loss
---
435
---
EREC
Diode Reverse Recovery energy
---
40
---
tRR
Diode Reverse Recovery time
---
150
---
ns
QG
Turn-On IGBT Gate Charge
---
19
29
nC
RBSOA
Reverse Bias Safe Operating Area
μJ
IC=5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
μJ
IC=5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=8A, V+=400V, VGE=15V
TJ=150°C, IC=5A, VP=600V
V+= 450V,
VCC=+15V to 0V
FULL SQUARE
See CT3
TJ=25°C, VP=600V,
SCSOA
ICSC
Short Circuit Safe Operating Area
Short Circuit Collector Current
5
---
---
50
---
---
μs
A
V+= 360V,
VCC=+15V to 0V
See CT2
TJ=25°C, V+= 400V, VCC=15V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 3)
Symbol
Definition
Min
Typ
Max
VB1,2,3
Units
High side floating supply voltage
VS+12
VS+15
VS+20
VS1,2,3
High side floating supply offset voltage
Note 4
---
450
VCC
Low side and logic fixed supply voltage
12
15
20
VITRIP
ITRIP input voltage
VSS
---
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
---
VSS+5
V
HIN
High side PWM pulse width
1
---
---
μs
Deadtime
External dead time between HIN and LIN
1
---
---
μs
V
V
Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAM136-1060BS
Static Electrical Characteristics Driver Function @ TJ= 25°C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
Definition
Min
Typ
Max
Units
2.5
---
---
V
VIN,th+
Positive going input threshold
VIN,th-
Negative going input threshold
---
---
0.8
V
VCCUV+, VBSUV+
VCC and VBS supply undervoltage, Positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC and VBS supply undervoltage, Negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
IQBS
Quiescent VBS supply current
---
---
120
μA
IQCC
Quiescent VCC supply current
---
---
4
mA
ILK
Offset Supply Leakage Current
---
---
50
μA
IIN+
Input bias current VIN=3.3V
---
100
195
μA
IIN-
Input bias current VIN=0V
-1
--
---
μA
ITRIP+
ITRIP bias current VT/ITRIP=3.3V
---
3.3
6
μA
ITRIP-
ITRIP bias current VT/ITRIP=0V
-1
---
---
μA
V(ITRIP)
ITRIP threshold Voltage
0.44
0.49
0.54
V
V(ITrip, HYS)
ITRIP Input Hysteresis
---
0.07
---
V
Dynamic Electrical Characteristics @ TJ= 25°C
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
TON
Input to Output propagation turnon delay time (see fig.11)
---
---
1.15
TOFF
Input to Output propagation turnoff delay time (see fig. 11)
---
---
1.15
μs
TFLT
Input Filter Time (HIN, LIN)
100
200
---
ns
VIN=0 or VIN=5V
TBLT-ITRIP
ITRIP Blanking Time
100
150
---
ns
VIN=0 or VIN=5V, VITRIP=5V
DT
Dead Time
220
290
360
ns
VIN=0 or VIN=5V
MT
Matching Propagation Delay Time
(On & Off) all channels
---
40
75
ns
External dead time> 400ns
TITRIP
ITRIP to six switch turn-off
propagation delay (see fig. 2)
---
---
1.75
μs
IC=5A, V+=300V
TFLT-CLR
FAULT clear time (see fig. 2)
---
32.0
---
ms
TC = 25°C
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Units Conditions
μs
IC=5A, V+=300V
5
IRAM136-1060BS
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Thermal resistance, per IGBT
---
4.6
5.0
Rth(J-C)
Thermal resistance, per Diode
---
6.9
7.6
---
Units Conditions
Inverter Operating Condition
Flat, greased surface. Heatsink
°C/W
compound thermal conductivity
1W/mK
Rth(C-S)
Thermal resistance, C-S
---
0.1
CD
Creepage Distance, from pins to
backside of module
3.2
---
---
mm
CTI
Comparative Tracking Index
600
---
---
-
See outline Drawings
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
R25
Resistance
97
100
103
Units Conditions
k
TC = 25°C
R125
Resistance
2.25
2.52
2.80
k
TC = 125°C
B
B-constant (25-50°C)
4165
4250
4335
k
Temperature Range
-40
---
125
°C
Typ. Dissipation constant
---
1
---
R2 = R1e [B(1/T2 - 1/T1)]
mW/°C TC = 25°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
Typ
Max
Units Conditions
RShunt
Resistance
72.5
73.3
74.1
m
0
---
200
ppm/°C
TCoeff
Temperature Coefficient
PShunt
Power Dissipation
---
---
2.2
W
TRange
Temperature Range
-40
---
125
°C
TC = 25°C
-40°C< TC <100°C
Input-Output Logic Level Table
6
FLT/EN
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
1
0
1
0
V+
1
0
0
1
0
1
0
0
0
Off
1
0
1
1
Off
1
1
X
X
Off
0
X
X
X
Off
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IRAM136-1060BS
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
T ITRIP
T FLT-CLR
Figure 2. ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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7
IRAM136-1060BS
Module Pin-Out Description
8
Pin
Name
1
VB3
Description
2
W,VS3
3
na
4
na
5
VB2
6
V,VS2
7
na
8
na
9
VB1
10
U,VS1
11
na
12
na
13
V
+
14
na
15
na
none
16
V-
Negative Bus Input Voltage
17
HIN1
Logic Input High Side Gate Driver - Phase 1
18
HIN2
Logic Input High Side Gate Driver - Phase 2
19
HIN3
Logic Input High Side Gate Driver - Phase 3
20
LIN1
Logic Input Low Side Gate Driver - Phase 1
21
LIN2
Logic Input Low Side Gate Driver - Phase 2
22
LIN3
23
FLT/EN
Fault Output and Enable Pins
24
IFB
Current Feedback Output Pin
25
VCC
+15V Main Supply
26
VSS
Negative Main Supply
27
ISD
Current Protection Level Programming Pin
28
RCIN
29
VTH
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
none
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
none
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
none
Positive Bus Input Voltage
none
Logic Input Low Side Gate Driver - Phase 3
RCIN Reset Programming Pin
Temperature Feedback
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IRAM136-1060BS
Typical Application Connection IRAM136-1060BS
Application Notes
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Mounting an additional high frequency ceramic capacitor close to the module
pins is highly recommended.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency and modulation techniques.
Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9.
Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series
with the VCC. (See maximum ratings Table on page 3).
4. WARNING! Please note that after approx. 32ms the FAULT is automatically reset. (See Dynamic
Characteristics Table on page 5). The default Fault clear time is when RCIN pin is open. Refer to Figure
11a for Re selection and desired RCIN setting.
5. PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the
system, overcurrent condition must be cleared before resuming operation.
6. ISD can be programmed by using external resistor (Rext) connected to Vss. The default current level is
when ISD pin is open (see Inverter Characteristics Table on page 3). Maximum current level can be
achieved by connecting ISD to Vss. See Figure 11b for desired current level and resistor selection.
7. Fault/En pin (23) must be pulled-up to +5V.
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9
IRAM136-1060BS
Maximum Output Phase RMS Current - A
12
11
10
9
8
7
6
TC = 80ºC
TC = 90ºC
TC = 100ºC
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
Maximum Output Phase RMS Current - A
6
5
4
3
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
2
1
0
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAM136-1060BS
100
Total Power Loss- W
80
60
40
20
IOUT = 6A
IOUT = 5A
IOUT = 4A
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
120
Total Power Loss - W
100
80
60
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
40
20
0
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
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11
IRAM136-1060BS
Max Allowable Case Temperature - ºC
160
140
120
100
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
80
60
40
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
IGBT Junction Temperature - °C
TJ avg = 1.2 x TTherm + 17
150
140
130
120
110
100
111
90
65
70
75
80
85
90
95
100
105
110
115
Internal Therm istor Tem perature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-1060BS
5.0
Thermistor Pin Read-Out Voltage - V
4.5
4.0
3.5
3.0
2.5
2.0
Max
Avg.
Min
1.5
1.0
0.5
0.0
-40 -30 -20 -10
0
10
20 30 40 50 60 70 80
Therm istor Tem perature - °C
90 100 110 120 130
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
Recommended Bootstrap Capacitor - F
11.0
10F
10.0
9.0
8.0
6.8F
7.0
6.0
4.7F
5.0
4.0
3.3F
3.0
2.2F
2.0
1.5F
1.0
0.0
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-1060BS
Typical Fault Clear Time - ms
24
20
16
12
8
4
0
1
2
3
4
5
6
7
8
External Pull Up Resistor Selection - M
9
10
Figure 11a. External Pull Up resistor selection for Fault clear time
(Recommended minimum Pull up Resistor is 1M)
Typical ITRIP Threshold - A
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
ISD Program m able Pull-Dow n Resistor - k
Figure 11b. Itrip Level External Pull down Resistor Selection
14
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IRAM136-1060BS
Figure 12. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
Figure 11c. Diode Reverse Recovery.
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15
IRAM136-1060BS
V+
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
IO
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
IO
Lo
Io
Figure CT2. S.C.SOA Circuit
V+
IC
Driver
Lin1,2,3
IN
Ho
Hin1,2,3
U,V,W
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
16
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IRAM136-1060BS
Package Outline IRAM136-1060BS
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-1060BS
P
note4
note2
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2008-05-23
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17