PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 (NPN) ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532 Q62702-F496 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Symbol Values BF 421 BF 423 Unit Collector-emitter voltage VCE0 – 250 Collector-emitter voltage RBE = 2.7 k VCER 300 – Collector-base voltage VCB0 300 250 Emitter-base voltage VEB0 5 Collector current IC 50 Peak base current IBM 100 Total power dissipation, TC = 88 ˚C Ptot 830 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA Junction - case2) Rth JC 1) 2) ≤ ≤ 150 K/W 75 For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BF 421 BF 423 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BF 423 V(BR)CE0 250 – – V Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 k BF 421 V(BR)CER 300 – – Collector-base breakdown voltage IC = 10 µA BF 421 BF 423 V(BR)CB0 300 250 – – – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5 – – Collector cutoff current VCB = 200 V ICB0 – – 10 nA Collector cutoff current VCE = 200 V, RBE = 2.7 kΩ , TA = 150 ˚C ICER – – 10 µA Emitter cutoff current, VEB = 5 V IEB0 – – 10 DC current gain IC = 100 µA, VCE = 20 V IC = 25 mA, VCE = 20 V hFE Collector-emitter saturation voltage1) IC = 25 mA, Tj =150 ˚C – 15 50 – – – – VCEsatRF – – 20 V Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT – 100 – MHz Output capacitance VCB = 30 V, f = 1 MHz Cobo – 0.8 – pF AC characteristics 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 BF 421 BF 423 Total power dissipation Ptot = f (TA; TC) Collector current IC = f (VBE) VCE = 20 V, TA = 25 ˚C Permissible pulse load RthJA = f (tp) Collector cutoff current ICB0 = f (TA) VCB = 200 V Semiconductor Group 3 BF 421 BF 423 DC current gain hFE = f (IC) VCE = 20 V, TA = 25 ˚C Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz Output capacitance Cobo = f (VCB) IC = 0, f = 1 MHz Semiconductor Group 4