2-GHz-Mixer PMB 2330 Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● Few external components Low noise Low spurious signal content High conversion transconductance Very highly isolated RF, IF and LO ports Good suppression of input signals at output Wide range of supply voltage P-DSO-8-1 Applications ● ● ● ● ● Cellular radio mixer Cordless telephone mixer UHF transceivers RF data links HF/VHF/UHF frequency conversion Type Version Ordering Code Package PMB 2330 V1.1 Q67000-A6045 P-DSO-8-1 (SMD) PMB 2330T V1.2 Q67000-A6103 P-DSO-8-1 (SMD) The PMB 2330 is a low power, monolithic, double balanced mixer similar to S 042 P and TBB 042 G for frequencies up to 2 GHz. Circuit Description The pins RF (7) and RF (8) are low resistance inputs of the base coupled difference stage. The resistor of at least 200 Ω may be connected between pins 7 and 6 (ground) and between 8 and 6 to increase the currents (max. 4 mA per pin) and thus the conversion transductance. The pins LO (4) and LO (5) are the local oscillator inputs of the mixer. The connections to the mixer inputs may be symmetrical or asymmetrical coupled, capacitive or inductive coupled. The mixer outputs MO (1) and MO (2) are high impedance open-collector outputs for frequencies up to 2 GHz. Semiconductor Group 1 01.94 PMB 2330 Pin Configuration (top view) Pin Definitions and Functions Pin No. Symbol Function 1 MO Mixer output 2 MO Mixer output 3 VS Supply voltage 4 LO Oscillator input 5 LO Oscillator input 6 GND Ground 7 RF Mixer input 8 RF Mixer input Semiconductor Group 2 PMB 2330 Block Diagram Semiconductor Group 3 PMB 2330 Electrical Characteristics Absolute Maximum Ratings TA = − 40 to 85 °C Parameter Symbol Limit Values min. typ. Unit Remarks Supply voltage VS 0 8 V Mixer output V1,2 1 8 V Oscillator input V4,5 0 2.5 V Mixer input V7,8 0.8 3.5 V Junction temperature Tj 150 °C Storage temperature Tstg 125 °C Thermal resistance Rth SA 185 K/W − 40 open collector All pins have no additional internal ESD protection circuitry Operational Range Within the operational range the IC operates as described in the circuit description. Supply voltage VS 3 7 V Input frequency range fI 10 2000 MHz Ambient temperature in operation TA − 40 85 °C Semiconductor Group 4 PMB 2330 Characteristics VS = 5 V ± 10 %; TA = 25 °C Parameter Symbol Limit Values min. typ. Unit Test Condition max. Current consumption IMO + IMO + IVS 1.6 mA Output current IMO = IMO 0.54 mA Output current difference IMO − IMO Break down voltage VMO, MO 13 V Input resistance RRF 100 Ω Input inductance LRF 10 nH Input level PRF Input Intercept point PIPI Input frequency fRF 60 µA IMO, MO = 8 mA Signal Input RF/RF Noise figure fRF = 100 MHz, fLO = 145 MHz fRF = 1 GHz, fLO = 1.045 GHz 0 −5 0 dBm dBm 2.0 in series to RRF referred to input GHz according to test circuit N N 6 8 dB dB Input resistance RLO diff RLO diff 3.8 0.6 kΩ kΩ fLO = 100 MHz fLO = 1 GHz Input capacitance CLO diff 1.5 pF parallel to RLO diff Input level PLO PLO 10 10 dBm dBm fLO = 100 MHz fLO = 1 GHz Input frequency fLO 2.0 GHz Local Oscillator Input LO/LO − 10 −5 Mixer Output MO/MO Output resistance RMO diff RMO diff 7.0 0.6 kΩ kΩ fMO = 100 MHz fMO = 1 GHz Output capacitance CMO diff 1.5 pF parallel to RMO diff Power gain fRF = 100 MHz, fLO = 145 MHz fRF = 1 GHz, fLO = 1.045 GHz VP VP 10 10 dB dB Intermediate frequency fIF Semiconductor Group 2.0 5 GHz PMB 2330 Test Circuit Semiconductor Group 6 PMB 2330 GPS05121 Plastic Package, P-DSO-8-1 (SMD) (Plastic Dual Small Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 7 Dimensions in mm