NPN Silicon AF Transistor BC 368 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 369 (PNP) ● 2 3 1 Type Marking Ordering Code BC 368 – C62702-C747 Pin Configuration 1 2 3 E C Package1) TO-92 B Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 156 Junction - case3) Rth JC ≤ 75 A mA Thermal Resistance 1) 2) 3) K/W For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 368 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 30 mA V(BR)CE0 20 – – V Collector-base breakdown voltage IC = 10 µA V(BR)CB0 25 – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 5 – – Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C ICB0 – – – – 100 10 nA µA Emitter cutoff current VEB = 5 V IEB0 – – 100 nA DC current gain IC = 5 mA; VCE = 10 V IC = 500 mA; VCE = 1 V1) IC = 1 A; VCE = 1 V1) hFE 50 85 60 – 160 – – 375 – Collector-emitter saturation voltage1) IC = 1 A; IB = 100 mA VCEsat – – 0.5 Base-emitter voltage1) IC = 5 mA; VCE = 10 V IC = 1 A; VCE = 1 V VBE – – 0.6 – – 1 – 100 – – V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz 1) fT Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 MHz BC 368 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 25 V Permissible pulse load RthJA = f (tp) DC current gain hFE = f (IC) VCE = 1 V, TA = 25 ˚C Semiconductor Group 3 BC 368 Collector current IC = f (VBE) VCE = 1 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10, TA = 25 ˚C Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 4