BSP613P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Avalanche rated ID • dv/dt rated -60 V 0.13 Ω -2.9 A SOT-223 • Ideal for fast switching buck converter Drain pin 2,4 Type Package Ordering Code BSP613P SOT-223 Q67040-S4190 Gate pin1 Source pin 3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -2.9 TA=70°C -2.3 ID puls -11.6 EAS 150 Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse mJ ID=2.9 A , V DD=-25V, RGS=25Ω kV/µs IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2004-06-02 BSP613P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. RthJS - - 19 Thermal resistance, junction - ambient, leaded RthJA - 100 - SMD version, device on PCB: RthJA - - 100 - - 70 Characteristics Thermal resistance, junction - soldering point K/W (Pin 4) @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -2.1 -3 -4 Static Characteristics Drain-source breakdown voltage V V GS=0, I D=-250µA Gate threshold voltage, VGS = V DS ID=-1mA Zero gate voltage drain current µA IDSS V DS=-60V, VGS=0, Tj=25°C - -0.1 -1 V DS=-60V, VGS=0, Tj=125°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.11 0.13 Ω Gate-source leakage current V GS=-20V, VDS=0 Drain-source on-state resistance V GS=-10V, I D=2.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2004-06-02 BSP613P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 2.7 5.4 - S pF Dynamic Characteristics Transconductance g fs |VDS|≥2*|I D|*RDS(on)max , ID=2.9A Input capacitance Ciss V GS=0, V DS=-25V, - 715 875 Output capacitance Coss f=1MHz - 230 295 Reverse transfer capacitance Crss - 90 120 Turn-on delay time td(on) V DD=-30V, VGS=-10V, - 6.7 17 Rise time tr ID=2.9A, RG=2.7Ω - 9 18 Turn-off delay time td(off) - 26 52 Fall time tf - 7 19 - 2.5 3.8 - 8.9 14.3 - 22 33 V(plateau) V DD=-48V, I D=2.9A - -3.9 - V IS - - -2.9 A - - -11.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=-48V, I D=2.9A V DD=-48V, I D=2.9A, nC V GS=0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, |I F| = |I S| - -0.8 -1.1 V Reverse recovery time trr V R=-30V, |IF| = |I S|, - 37.2 79 ns Reverse recovery charge Qrr di F/dt=100A/µs - 59.8 112 nC Page 3 2004-06-02 BSP613P 1 Power Dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS≥ 10 V BSP613P 1.9 BSP613P 3.2 W A 1.6 2.4 1.2 ID P tot 1.4 1 2 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0 0 20 40 60 80 100 120 °C 0 160 0 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f(tp) parameter : D = 0 , TA = 25 °C parameter: D = t p / T 10 °C 2 BSP613P 10 2 BSP613P 10 1 10 0 K/W A /ID 1 S = ID R 10 VD ) (on DS Z thJC 10 t = 100.0 p 1 ms 0 10 -1 10 -2 10 ms D = 0.50 0.20 0.10 10 -1 10 -3 10 -4 10 -5 0.05 0.02 single pulse 0.01 DC 10 -2 -10 -1 -10 0 -10 1 V -10 2 VDS 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2004-06-02 BSP613P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj =25°C parameter: VGS; Tj = 25 °C 0.5 7 A Ω Vgs = 5V 6 0.4 Vgs = 10V 5 -I D R DS(on) 5.5 Vgs = 4.5V 4.5 4 Vgs = 4V Vgs = 4,5V 0.35 0.3 Vgs = 6V 0.25 3.5 Vgs = 5V 3 0.2 2.5 Vgs = 4V 2 0.15 1.5 0.1 1 Vgs=3.5V 0 0.5 1 1.5 2 2.5 3 3.5 Vgs = 10V 0.05 0.5 0 Vgs = 6V 4 0 V 5 -VDS 0 1 2 3 A 4 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max g fs = f(I D) parameter: Tj = 25 °C parameter: Tj = 25 °C 8 8 A S 6 gfs 6 ID 6 -ID 5 5 4 4 3 3 2 2 1 1 0 0 1 2 3 4 5 0 7 V -VGS 0 Page 5 1 2 3 4 5 6 7 8 A -ID 10 2004-06-02 BSP613P 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -2.9 A, V GS = -10 V parameter: VGS = VDS , ID = -1 mA BSP613P -5.0 0.34 W V 98% -4.0 VGS(th) RDS(on) 0.28 0.24 0.20 0.16 -3.5 typ -3.0 98% -2.5 typ -2.0 2% 0.12 -1.5 0.08 -1.0 0.04 -0.5 0.00 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 pF BSP613P A 10 3 -10 1 IF C Ciss Coss 10 2 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Page 6 2004-06-02 BSP613P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (T j) VGS = f (QG), parameter: VDS ; Tj = 25 °C par.: ID = 2.9 A , V DD = -25 V, RGS = 25 Ω ID = 2.9 A pulsed; 160 16 mJ V 12 V GS 120 E AS BSP613P 100 10 0.2 VDS max 80 8 0.8 VDS max 60 6 40 4 20 2 0 25 45 65 85 105 125 ºC 0 165 Tj 0 4 8 12 16 20 24 28 nC 34 |QG | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP613P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Page 7 2004-06-02 BSP613P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2004-06-02